In some embodiments, the present disclosure relates to a process tool which includes a housing that defines a vacuum chamber. A wafer chuck is in the housing, and a carrier wafer is on the wafer chuck. A structure that is used for deposition processes is arranged at a top of the housing. A camera is integrated on the wafer chuck such that the camera faces a top of the housing. The camera is configured to wirelessly capture images of the structure used for deposition processes within the housing. Outside of the housing is a wireless receiver. The wireless receiver is configured to receive the images from the camera while the vacuum chamber is sealed.

In some embodiments, the present disclosure relates to a process tool which includes a housing that defines a vacuum chamber. A wafer chuck is in the housing, and a carrier wafer is on the wafer chuck. A structure that is used for deposition processes is arranged at a top of the housing. A camera is integrated on the wafer chuck such that the camera faces a top of the housing. The camera is configured to wirelessly capture images of the structure used for deposition processes within the housing. Outside of the housing is a wireless receiver. The wireless receiver is configured to receive the images from the camera while the vacuum chamber is sealed.

Methods for monitoring process chambers using a controllable plasma oxidation process followed by a controlled reduction process and metrology are described. In some embodiments, the metrology comprises measuring the reflectivity of the metal oxide film formed by the controllable plasma oxidation process and the reduced metal film or surface modified film formed by reducing the metal oxide film.

Methods for monitoring process chambers using a controllable plasma oxidation process followed by a controlled reduction process and metrology are described. In some embodiments, the metrology comprises measuring the reflectivity of the metal oxide film formed by the controllable plasma oxidation process and the reduced metal film or surface modified film formed by reducing the metal oxide film.

A resistance measurement device for measuring sheet resistance of an electrically conductive film that is long in one direction includes a probe unit disposed to face the electrically conductive film; a scanning unit that allows the probe unit to scan in a cross direction crossing the one direction over both a conveyance region and a non-conveyance region of the electrically conductive film; and an arithmetic unit that calculates a sheet resistance of the electrically conductive film based on a voltage measured by the probe unit. The arithmetic unit has a memory that memorizes a reference voltage measured in the non-conveyance region, and corrects, based on the reference voltage, an actual voltage measured by allowing the probe unit to scan in the cross direction in the conveyance region.

A film manufacturing apparatus includes a lamination unit that laminates a first layer at one side in a thickness direction of a long-length substrate film to produce a one-sided laminated film, and that laminates a second layer at the other side in the thickness direction of the one-sided laminated film to produce a double-sided laminated film; a conveyance unit; a marking unit; a measurement unit; a detection unit, disposed at an upstream side in the conveyance direction of the measurement unit; and an arithmetic unit that obtains physical properties of the first layer and the second layer based on the physical property at a first position in the one-sided laminated film and the physical property at a second position in the double-sided laminated film. The arithmetic unit defines, with a mark as a reference, a position substantially the same as the first position to be the second position.

A film manufacturing apparatus includes a lamination unit that laminates a first layer at one side in a thickness direction of a long-length substrate film to produce a one-sided laminated film, and that laminates a second layer at the other side in the thickness direction of the one-sided laminated film to produce a double-sided laminated film; a conveyance unit; a marking unit; a measurement unit; a detection unit, disposed at an upstream side in the conveyance direction of the measurement unit; and an arithmetic unit that obtains physical properties of the first layer and the second layer based on the physical property at a first position in the one-sided laminated film and the physical property at a second position in the double-sided laminated film. The arithmetic unit defines, with a mark as a reference, a position substantially the same as the first position to be the second position.

A target measurement device is provided. The target measurement device includes a fixing ring, a main body, and a transceiver. The fixing ring has a first surface. The main body is over the first surface of the fixing ring. The transceiver is coupled to the main body. The transceiver is at least movable between a center of the fixing ring to an edge of the fixing ring from a top view perspective. A method for measuring a target is also provided.

One or more embodiments relates to a system and method for growing ultrasmooth and high quantum efficiency photocathodes. The method includes exposing a substrate of Si wafer to an alkali source; controlling co-evaporating growth and co-deposition forming a growth including Te; and monitoring a stoichiometry of the growth, forming the photocathodes.

One or more embodiments relates to a system and method for growing ultrasmooth and high quantum efficiency photocathodes. The method includes exposing a substrate of Si wafer to an alkali source; controlling co-evaporating growth and co-deposition forming a growth including Te; and monitoring a stoichiometry of the growth, forming the photocathodes.