In a method for coating a base body, a first target and a second target are arranged in a vacuum chamber. A base body to be coated is arranged in the vacuum chamber is heated to a coating temperature of less than 600° C. During sputtering with sputter gas ions, first target particles are liberated from the first target and second target particles are liberated from the second target and are deposited as coating particles on the base body. A first sputter rate is specified for the first target and a second sputter rate is specified for the second target such that, during the sputtering process, the coating is generated as an A15 phase with an intended stoichiometric ratio of the first target particles to the second target particles. A functional element has a base body and a coating of Nb.sub.3Sn applied directly on the surface of the base body.

This application discloses a coating method for making a chip. The method includes: fixing a substrate on a base. The substrate includes a hole. The method includes controlling an included angle between a plane on which the substrate is located and a deposition direction of a coating material to be greater than 0 degrees and less than 90 degrees. The method includes controlling the substrate to rotate with respect to an axis perpendicular to the plane on which the substrate is located. The method includes during the rotation of the substrate, controlling the coating material to enter the hole along the deposition direction such that the coating material is deposited on a sidewall of the hole.

This application discloses a coating method for making a chip. The method includes: fixing a substrate on a base. The substrate includes a hole. The method includes controlling an included angle between a plane on which the substrate is located and a deposition direction of a coating material to be greater than 0 degrees and less than 90 degrees. The method includes controlling the substrate to rotate with respect to an axis perpendicular to the plane on which the substrate is located. The method includes during the rotation of the substrate, controlling the coating material to enter the hole along the deposition direction such that the coating material is deposited on a sidewall of the hole.

An inkjet printing apparatus includes: a stage, which reciprocates in forward and reverse directions opposite to each other and has a target substrate disposed thereon; an inspection device including a film disposed outside the stage and a measurement unit which measures an inspection pattern provided on the film; and a head assembly, which moves along one direction crossing the forward direction and has a plurality of heads which supplies a liquid composition to the target substrate. The head assembly moves in the one direction to overlap the film and sprays the composition onto the film to form an inspection pattern.

A method for cleaning contacts on a substrate incorporates ion control to selectively remove oxides. The method includes exposing the substrate to ions of an inert gas, supplying a first RF frequency of a first bias power supply to a substrate support, supplying a second RF frequency of a second bias power supply to a substrate support, and adjusting a first power level of the first RF frequency and a second power level of the second RF frequency to selectively remove oxide from at least one contact on the substrate while inhibiting sputtering of polymer material wherein the oxide removal is selective over removal of polymer material surrounding the at least one contact.

A physical vapor deposition system includes a deposition chamber, a support to hold a substrate in the deposition chamber, a target in the chamber, a power supply configured to apply power to the target to generate a plasma in the chamber to sputter material from the target onto the substrate to form a piezoelectric layer on the substrate, and a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target. Each deposition phase lasts at least 30 seconds and each cooling phase lasts at least 30 seconds.

A physical vapor deposition system includes a deposition chamber, a support to hold a substrate in the deposition chamber, a target in the chamber, a power supply configured to apply power to the target to generate a plasma in the chamber to sputter material from the target onto the substrate to form a piezoelectric layer on the substrate, and a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target. Each deposition phase lasts at least 30 seconds and each cooling phase lasts at least 30 seconds.

Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

The present disclosure relates to an arc ion coating device and a coating method. The arc ion coating device includes: a vacuum chamber with a vacuum environment inside; an arc generation component disposed in the vacuum chamber and comprising a cathode target, an anode and an arc starter, the cathode target being columnar and configured to release plasmas, and the arc starter being disposed between the cathode target and the anode and configured to generate charged particles to guide a generation of an arc between a side of the cathode target and the anode to coat a workpiece; a support frame disposed in the vacuum chamber, the support frame being disposed at a side of the anode away from the cathode target and configured for a placement of the workpiece; and a power supply component comprising an arc power supply and a first accumulator, the arc power supply having a first output end and a second output end, the first output end being configured to output a pulsed voltage and connected to the arc starter, the second output end being configured to output an adjustable DC voltage and charge the first accumulator, and a negative pole and a positive pole of the first accumulator being connected to the cathode target and the anode, respectively.

The present disclosure relates to an arc ion coating device and a coating method. The arc ion coating device includes: a vacuum chamber with a vacuum environment inside; an arc generation component disposed in the vacuum chamber and comprising a cathode target, an anode and an arc starter, the cathode target being columnar and configured to release plasmas, and the arc starter being disposed between the cathode target and the anode and configured to generate charged particles to guide a generation of an arc between a side of the cathode target and the anode to coat a workpiece; a support frame disposed in the vacuum chamber, the support frame being disposed at a side of the anode away from the cathode target and configured for a placement of the workpiece; and a power supply component comprising an arc power supply and a first accumulator, the arc power supply having a first output end and a second output end, the first output end being configured to output a pulsed voltage and connected to the arc starter, the second output end being configured to output an adjustable DC voltage and charge the first accumulator, and a negative pole and a positive pole of the first accumulator being connected to the cathode target and the anode, respectively.