A sputtering system includes a vacuum chamber, a power source having a pole coupled to a backing plate for holding a sputtering target within the vacuum chamber, a pedestal for holding a substrate within the vacuum chamber, and a time of flight camera positioned to scan a surface of a target held to the backing plate. The time of flight camera may be used to obtain information relating to the topography of the target while the target is at sub-atmospheric pressure. The target information may be used to manage operation of the sputtering system. Managing operation of the sputtering system may include setting an adjustable parameter of a deposition process or deciding when to replace a sputtering target. Machine learning may be used to apply the time of flight camera data in managing the sputtering system operation.

A sputtering system includes a vacuum chamber, a power source having a pole coupled to a backing plate for holding a sputtering target within the vacuum chamber, a pedestal for holding a substrate within the vacuum chamber, and a time of flight camera positioned to scan a surface of a target held to the backing plate. The time of flight camera may be used to obtain information relating to the topography of the target while the target is at sub-atmospheric pressure. The target information may be used to manage operation of the sputtering system. Managing operation of the sputtering system may include setting an adjustable parameter of a deposition process or deciding when to replace a sputtering target. Machine learning may be used to apply the time of flight camera data in managing the sputtering system operation.

The present disclosure relates to systems and methods of additive manufacturing that reduce or eliminates defects in the bulk deposition material microstructure resulting from the additive manufacturing process. An additive manufacturing system comprises evaporating a deposition material to form an evaporated deposition material and ionizing the evaporated deposition material to form an ionized deposition material flux. After forming the ionized deposition material flux, the ionized deposition material flux is directed through an aperture, accelerated to a controlled kinetic energy level and deposited onto a surface of a substrate. The aperture mechanism may comprise a physical, electrical, or magnetic aperture mechanism. Evaporation of the deposition material may be performed with an evaporation mechanism comprised of resistive heating, inductive heating, thermal radiation, electron heating, and electrical arc source heating.

A treatment system (100) comprises a process chamber (101) for dynamic or static treatment of at least one substrate. An inductively coupled plasma source, ICP source (120, 120′), comprises at least one inductor (130a, 130b) extending along the longitudinal direction of the ICP source (120, 120′), a gas supply device (141, 142) for one or a plurality of process gases, and a gas directing arrangement (150) disposed in the process chamber (101), said gas directing arrangement (150) extending along the longitudinal direction of the ICP source (120, 120′) and partially surrounding the at least one inductor (130a, 130b).

A method, system, and evaporation source for reactive deposition is provided. The system includes a deposition surface operable for depositing a material onto a substrate provided on the deposition surface. The system further includes an evaporation source positioned for depositing the material onto the substrate. The evaporation source includes a crucible. The crucible includes a base and at least one sidewall extending upward from the base and defining an interior region of the crucible. The evaporation source further includes a cooling mechanism. The cooling mechanism includes a cylindrical cooling jacket surrounding an outer surface of the at least one sidewall while leaving a bottom surface of the base exposed, wherein a cooling gap is defined between the outer surface of the at least one sidewall of the crucible and an inner surface of a sidewall of the cylindrical cooling jacket.

A method, system, and evaporation source for reactive deposition is provided. The system includes a deposition surface operable for depositing a material onto a substrate provided on the deposition surface. The system further includes an evaporation source positioned for depositing the material onto the substrate. The evaporation source includes a crucible. The crucible includes a base and at least one sidewall extending upward from the base and defining an interior region of the crucible. The evaporation source further includes a cooling mechanism. The cooling mechanism includes a cylindrical cooling jacket surrounding an outer surface of the at least one sidewall while leaving a bottom surface of the base exposed, wherein a cooling gap is defined between the outer surface of the at least one sidewall of the crucible and an inner surface of a sidewall of the cylindrical cooling jacket.

A pulsed-DC power generator is used to sputter a substrate in a chamber, and the power generator includes a first voltage source, a second voltage source, a switch unit, a control unit, and a detection unit. The control unit provides a first control signal to control the switching of the switch unit to integrate a first voltage of the first voltage source and a second voltage of the second voltage source into a pulse voltage. The control unit adjusts parameters of a first predetermined time period for arc extinction when the pulse voltage is in a working time period of the first voltage, and the number that a voltage value of the first voltage in a voltage variation to be higher than a range is higher than the number of occurrence.

A pulsed-DC power generator is used to sputter a substrate in a chamber, and the power generator includes a first voltage source, a second voltage source, a switch unit, a control unit, and a detection unit. The control unit provides a first control signal to control the switching of the switch unit to integrate a first voltage of the first voltage source and a second voltage of the second voltage source into a pulse voltage. The control unit adjusts parameters of a first predetermined time period for arc extinction when the pulse voltage is in a working time period of the first voltage, and the number that a voltage value of the first voltage in a voltage variation to be higher than a range is higher than the number of occurrence.

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying pulsed DC power to a target disposed in a processing volume of a processing chamber for depositing sputter material onto a substrate, during a pulse off time, determining if a reverse current is equal to or greater than at least one of a first threshold or a second threshold different from the first threshold, and if the reverse current is equal to or greater than the at least one of the first threshold or second threshold, generate a pulsed DC power shutdown response, and if the reverse current is not equal to or greater than the at least one of the first threshold or second threshold, continue supplying pulsed DC power to the target.

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying pulsed DC power to a target disposed in a processing volume of a processing chamber for depositing sputter material onto a substrate, during a pulse off time, determining if a reverse current is equal to or greater than at least one of a first threshold or a second threshold different from the first threshold, and if the reverse current is equal to or greater than the at least one of the first threshold or second threshold, generate a pulsed DC power shutdown response, and if the reverse current is not equal to or greater than the at least one of the first threshold or second threshold, continue supplying pulsed DC power to the target.