A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.

A semiconductor manufacturing apparatus for forming a film on a substrate by sputtering a target based on a recipe for performing film formation is provided. The apparatus comprises: a storage device configured to store an adjustment coefficient for adjusting a film quality of the formed film based on the recipe; a monitoring device configured to monitor a used amount of the target; a compensation device configured to calculate a compensation value for compensating at least one of process conditions set in the recipe by inputting the used amount of the target monitored by the monitoring device and the adjustment coefficient into a calculation formula; and a recipe execution device configured to execute film formation based on the recipe and the compensation value.

A semiconductor manufacturing apparatus for forming a film on a substrate by sputtering a target based on a recipe for performing film formation is provided. The apparatus comprises: a storage device configured to store an adjustment coefficient for adjusting a film quality of the formed film based on the recipe; a monitoring device configured to monitor a used amount of the target; a compensation device configured to calculate a compensation value for compensating at least one of process conditions set in the recipe by inputting the used amount of the target monitored by the monitoring device and the adjustment coefficient into a calculation formula; and a recipe execution device configured to execute film formation based on the recipe and the compensation value.

A sputtering apparatus includes a placement portion where a target having a first opening is placed, an anode, and a metal member. The anode and the metal member are disposed at positions corresponding to the first opening of the target in the placement portion. The anode and the metal member are electrically insulated from each other. The metal member is set to a ground potential or a floating potential.

A sputtering apparatus includes a placement portion where a target having a first opening is placed, an anode, and a metal member. The anode and the metal member are disposed at positions corresponding to the first opening of the target in the placement portion. The anode and the metal member are electrically insulated from each other. The metal member is set to a ground potential or a floating potential.

Examples of a substrate transfer system include a chamber in which a plurality of through holes are formed on a side surface, a substrate transfer device provided in the chamber, and a lamp heater disposed in the chamber. The lamp heater is configured to heat an inner wall of the chamber and the substrate transfer device.

The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

A method for manufacturing a patterned surface coating of an automobile heat dissipation device and an automobile heat dissipation device having a patterned surface coating are provided. The method for manufacturing the patterned surface coating of the automobile heat dissipation device includes providing a metal heat dissipation device, and forming a sputtered metal layer that is patterned on an upper surface of the metal heat dissipation device by sputtering, allowing a thickness of the sputtered metal layer to be between 1 μm and 3 μm, and allowing the sputtered metal layer to cover an area less than 90% of an area of the upper surface of the metal heat dissipation device.

A sputtering apparatus is provided. The sputtering apparatus comprises a vacuum chamber in which a substrate is located; a target having one surface facing an inner surface of the vacuum chamber; a gas supplier configured to supply a gas for generating plasma in the vacuum chamber; a power supplier configured to supply a power to the target to generate the plasma, sputter the target, and form a film on the substrate; and an abnormality detector configured to detect abnormality caused by a temperature of the target.