A sputtering apparatus is provided. The sputtering apparatus comprises a vacuum chamber in which a substrate is located; a target having one surface facing an inner surface of the vacuum chamber; a gas supplier configured to supply a gas for generating plasma in the vacuum chamber; a power supplier configured to supply a power to the target to generate the plasma, sputter the target, and form a film on the substrate; and an abnormality detector configured to detect abnormality caused by a temperature of the target.

A part includes a base material, a colored layer on the base material, and a surface layer on the colored layer, wherein the colored layer contains Zr, and optionally, C and/or N, a ratio (H.sub.Zr .sub.oxide/H.sub.Zr) of a peak height derived from Zr oxide (H.sub.Zr oxide) to a peak height of Zr (H.sub.Zr) at an interface of the colored layer on the side of the surface layer is more than 0 and less than 4.5, the interface is a point where Zr is detected by sputtering the part from the side of the surface layer with an XPS depth direction analysis, and the ratio (H.sub.Zr oxide/H.sub.Zr) at a point where Ar sputtering is performed for 5 minutes from the interface of the colored layer on the side of the surface layer with the XPS depth direction analysis is 0 to less than 3. The surface layer is water-repellent and exhibits a sputtering time of 5 minutes or less

A part includes a base material, a colored layer, an intermediate layer, and a water-repellent-surface layer. The colored layer contains 35 at % to 99 at % of C, 0 at % to less than 40 at % of Cr, 0 at % to less than 15 at % of N, and more than 0 at % to less than 15 at % of O. The intermediate layer contains at least one metal atom selected from Cr, Zr, and Si; and an oxygen atom. The intermediate layer exhibits a sputtering time of 0.5 minutes or more to 9 minutes or less

In a method for evaporating a non-gaseous starting material, the starting material is introduced into an evaporation chamber; an evaporation element heats the starting material to create a vapor; a conveying gas flow transports the vapor through a conveying channel and past a sensor, which measures the concentration or partial pressure of the vapor in the gas flow flowing through the conveying channel; and the mass flow of the vapor through the conveying channel is controlled by varying the conveying gas flow with respect to a setpoint value. To keep the vapor flow largely constant over time, a compensating gas flow is fed into the conveying channel at a mixing point disposed between the evaporator and the sensor. A second mass flow controller controls the mass flow of the compensating gas flow such that, when the conveying gas flow varies, the gas flow flowing past the sensor remains constant.

The invention relates to a method and a device to for applying a layer 64 to a body 60, 62, and to a coated body 60. The body 60, 62 is disposed in a vacuum chamber 12 and process gas is supplied. A plasma is generated in the vacuum chamber 12 by operating a cathode 30 by applying a cathode voltage V.sub.P with cathode pulses and by sputtering a target 32. A bias voltage V.sub.B is applied to the body 60, 62 so that charge carriers of the plasma are accelerated into the direction of the body 60, 62 and attached to its surface. In order to achieve favorable properties of the coating 64 in a controlled way, the time course of the bias voltage V.sub.B is varied during the coating duration D. In the coating 64 of the body 60, 62, the material of the layer 64 comprises proportions of a noble gas, the concentration of which in the layer 64 varies over the layer thickness.

In some embodiments, the present disclosure relates a process tool that includes a chamber housing defining a processing chamber. Within the processing chamber is a workpiece holder apparatus that is configured to hold a workpiece. A sonar sensor is arranged over the workpiece holder apparatus. The sonar sensor includes an emitter that is configured to produce sound waves traveling towards the workpiece holder apparatus. The sonar sensor also includes a detector that is configured to receive reflected sound waves from the workpiece holder apparatus or an object between the sonar sensor and the workpiece holder apparatus. Further, sonar sensor control circuitry is coupled to the sonar sensor and is configured to determine if a workpiece is present on the workpiece holder apparatus based on a sonar intensity value of the reflected sound waves received by the detector of the sonar sensor.

A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

One or more embodiments described herein generally relate to methods and systems for monitoring film thickness using a sensor assembly. In embodiments described herein, a process chamber having a chamber body, a substrate support disposed in the chamber body, a lid disposed over the chamber body, and a sensor assembly coupled to the chamber body at a lower portion of the sensor assembly. The sensor assembly is coupled to the lid at an upper portion of the sensor assembly. The sensor assembly includes one or more apertures disposed through one or more sides of the sensor assembly, and the one or more sensors are disposed in the sensor assembly through the one or more of the apertures.

The present disclosure provides a method and system for controlling a deposition device, relating to the field of semiconductor technology. The method for controlling a deposition device is applied to the deposition device, the deposition device includes a reaction chamber and an electrostatic chuck arranged in the reaction chamber, the electrostatic chuck carries a wafer, and the controlling method includes: obtaining a pressure value between the wafer and the electrostatic chuck; and when the pressure value exceeds a preset range, the deposition device sending out an alarm signal, and executing a cleaning operation according to a use state of the electrostatic chuck.