An attachment system and method for optical parts for applying treatments and deposits on at least one surface of said parts without sparse zones on said surface. The system includes an optical part holder in the form of a flange provided with two branches connected at respective first branch ends thereof by a spring link and provided at respective second branch ends thereof with facing tabs and means for bringing said tabs together suited for tightening the branches on an edge of said parts. The method includes a step of positioning an optical part holder in the form of a flange on the edge of said optical part, where a front surface of said flange is positioned recessed from the surface to be treated or flush with the surface to be treated and a step of tightening the flange on the edge of said optical part.

A flow rate adjustment valve includes: a flow path portion which has one end at which an opening is formed, and in which a fluid flows; a lifting valve which is configured to close the opening by covering an entire region of the opening, open the opening by being separated from the opening in an opening direction of the opening, and change a distance from the opening in the opening direction to change a flow area with respect to the opening; and a servo actuator as a driver which moves the lifting valve in the opening direction based on a predetermined detection value.

A flow rate adjustment valve includes: a flow path portion which has one end at which an opening is formed, and in which a fluid flows; a lifting valve which is configured to close the opening by covering an entire region of the opening, open the opening by being separated from the opening in an opening direction of the opening, and change a distance from the opening in the opening direction to change a flow area with respect to the opening; and a servo actuator as a driver which moves the lifting valve in the opening direction based on a predetermined detection value.

A method of forming a low reflectivity coating on an optical surface for wide angle of incidence is provided. The method includes depositing a low refractive index layer of material on a stack of dielectric layers, depositing a hydrophobic compatible material on the stack of dielectric layers, forming a blend interface layer on the stack of dielectric layers, the blend interface layer including a portion of the low refractive index layer of material and a portion of the hydrophobic compatible material, and depositing a hydrophobic layer of material adjacent to the blend interface layer. A physical vapor deposition chamber to perform the above method is also provided.

Methods and apparatus for processing a substrate are provided herein. For example, a cooling apparatus for use with a substrate support of a processing chamber comprises a heat exchanger, a manifold assembly comprising a first input configured to connect to an output of the heat exchanger, a second input configured to connect to a first coolant supply configured to supply a first coolant, a first output configured to connect to the substrate support of the processing chamber, and a second output configured to connect to an input of the heat exchanger, a gas input configured to connect to a second coolant supply that is configured to supply a second coolant that is different from the first coolant to the substrate support, a first three-way valve connected between the first output of the manifold assembly and the substrate support and connected between the gas input and the substrate support, and a controller configured to control supplying one of the first coolant or the second coolant during operation.

The disclosure relates to a method of determining a velocity profile for the movement of a substrate to be coated relative to a coating source.

The disclosure relates to a method of determining a velocity profile for the movement of a substrate to be coated relative to a coating source.

Disclosed is a method of fabricating a resistive switching memory. A method of fabricating a resistive switching memory according to an embodiment of the present invention includes a step of forming a lower electrode on a substrate; a step of forming a resistive switching layer on the lower electrode using sputtering; and a step of forming an upper electrode on the resistive switching layer, wherein, in the step of forming a resistive switching layer on the lower electrode using sputtering, the substrate is disposed in a region, which is not reached by plasma generated by the first and second targets, between the first target and the second target disposed above the substrate to deposit the resistive switching layer.

Disclosed is a method of fabricating a resistive switching memory. A method of fabricating a resistive switching memory according to an embodiment of the present invention includes a step of forming a lower electrode on a substrate; a step of forming a resistive switching layer on the lower electrode using sputtering; and a step of forming an upper electrode on the resistive switching layer, wherein, in the step of forming a resistive switching layer on the lower electrode using sputtering, the substrate is disposed in a region, which is not reached by plasma generated by the first and second targets, between the first target and the second target disposed above the substrate to deposit the resistive switching layer.

An apparatus for sputter deposition of target material to a substrate is disclosed. In one form, the apparatus includes a substrate portion in which a substrate is provided and a target portion in which target material is provided, in use. The target portion and the substrate portion define between them a deposition zone. The apparatus includes an antenna arrangement for generating plasma, in use, and a confining arrangement. The confining arrangement includes a first element between the antenna arrangement and the deposition zone and a second element. The antenna arrangement is between the second element and the deposition zone. The first element confines the plasma towards the deposition zone to provide for sputter deposition of target material to the substrate, in use. The second element confines the plasma away from the second element, towards the antenna arrangement and, via the first element, towards the deposition zone, in use.