The invention relates to a method for decorating a timepiece component comprising: a) a step of preparation of the timepiece component optionally comprising a first step of depositing a first material on the timepiece component to form a first sub-layer, b) a second step of depositing a second material on the timepiece component obtained in step a) to form a second sub-layer, c) a colouring step comprising the deposition of a third coloured material on the timepiece component obtained in step b) to form a coloured external decorative layer,

According to the invention, at least step b) and step c) are achieved by a physical vapour deposition method.

A material source arrangement for depositing a material on a substrate in a vacuum deposition chamber is described. The material source arrangement includes a distribution pipe being configured to be in fluid communication with a material source providing the material to the distribution pipe; and at least one nozzle configured for guiding the material provided in the distribution pipe to the vacuum deposition chamber. The nozzle includes a thread for repeatedly connecting and disconnecting the nozzle to the distribution pipe. Further, a deposition apparatus for depositing material on a substrate including a material source arrangement, a nozzle for a material source arrangement, and a method for providing a distribution pipe and a nozzle for a material source arrangement are described.

In-line metallizer assemblies can include an external rotating actuator exchange that can be operable to exchange one or more parts between a conveyor system and a vacuum chamber, and an internal rotating actuator exchange within the vacuum chamber that can be operable to receive the one or more parts from the external rotating actuator exchange, transition the one or more parts to a sputter coater integrated with the vacuum chamber for metallizing, and return metallized one or more parts to the external rotating actuator exchange such that the external rotating actuator exchange can return the metallized one or more parts to the conveyor system.

In-line metallizer assemblies can include an external rotating actuator exchange that can be operable to exchange one or more parts between a conveyor system and a vacuum chamber, and an internal rotating actuator exchange within the vacuum chamber that can be operable to receive the one or more parts from the external rotating actuator exchange, transition the one or more parts to a sputter coater integrated with the vacuum chamber for metallizing, and return metallized one or more parts to the external rotating actuator exchange such that the external rotating actuator exchange can return the metallized one or more parts to the conveyor system.

A method of controlling a reactive deposition process and a corresponding assembly and/or apparatus are described. The method includes providing power to a cathode with a power supply, providing a voltage set point to the power supply, receiving a power value correlating the power provided to the cathode, and controlling a flow of a process gas in dependence of the power value to provide a closed loop control for the power value.

A method of controlling a reactive deposition process and a corresponding assembly and/or apparatus are described. The method includes providing power to a cathode with a power supply, providing a voltage set point to the power supply, receiving a power value correlating the power provided to the cathode, and controlling a flow of a process gas in dependence of the power value to provide a closed loop control for the power value.

An apparatus may comprise a plasma deposition unit, a movement system, and a mesh system. The plasma deposition unit may be configured to generate a plasma. The movement system may be configured to move a substrate under the plasma deposition unit. The mesh system may be located between the plasma deposition unit and the substrate in which a mesh may comprise a number of materials for deposition onto the substrate and in which the plasma passing through the mesh may cause a portion of the number of materials from the mesh to be deposited onto the substrate.

An apparatus may comprise a plasma deposition unit, a movement system, and a mesh system. The plasma deposition unit may be configured to generate a plasma. The movement system may be configured to move a substrate under the plasma deposition unit. The mesh system may be located between the plasma deposition unit and the substrate in which a mesh may comprise a number of materials for deposition onto the substrate and in which the plasma passing through the mesh may cause a portion of the number of materials from the mesh to be deposited onto the substrate.

The present invention is to provide a deposition device capable of coping with a size change of a substrate only by replacing a magnet unit and a target material. A deposition device (1) of the present invention is to perform deposition onto a surface of a substrate W to be conveyed by using an evaporation source (2) facing a front surface of the substrate (W), and the evaporation source (2) has a target material (7), a backing plate (8), a magnet unit (9), a cathode body (10), and a cooling water flow passage (12). The cooling water flow passage (12) is a space formed by separating the magnet unit (9) and the backing plate (8), and the cooling water can be distributed through this space. As the magnet unit (9), a short magnet unit can be arranged in correspondence with a narrow-width substrate having narrower width than that of the substrate (W), and as the target material (7), a short target material is arranged in correspondence with width of the arrange magnet unit (9).

A method of forming a particle trap on a sputtering chamber component comprises forming a first pattern on at least a portion of a surface of the sputtering chamber component to form a first patterned top surface, and forming a second pattern on at least a portion of the first patterned top surface.