According to one embodiment, film formation apparatus includes: a carrying unit that includes a rotation table which circulates and carries a workpiece; a film formation process unit which includes a target formed of a silicon material, and a plasma producer that produces plasma of a sputter gas introduced between the target and the rotation table, and which forms a silicon film on the workpiece by sputtering; and a hydrogenation process unit which includes a process gas introducing unit that introduces a process gas containing a hydrogen gas, and a plasma producer that produces plasma of the process gas, and which performs hydrogenation on the silicon film formed on the workpiece. The carrying unit carries the workpiece so as to alternately pass through the film formation process unit and through the hydrogenation process unit.

An ophthalmic substrate conveyor and method of conveying ophthalmic substrates for vacuum deposition utilizes gravity and impulse action energy to convey an ophthalmic substrate to an adjacent vacuum deposition machine, for coating the ophthalmic substrate with an ophthalmic substance through physical vapor deposition. The conveyor provides a spring-loaded lens wheel that selectively retains the ophthalmic substrate during coating. The lens wheel rides a pair of inclined rails, urged by gravity, to a vacuum deposition machine that coats HEV absorbing material onto ophthalmic substrate. An escapement mechanism subassembly transfers impulse action energy to the lens wheel to regulate the speed and direction of the lens wheel across the inclined rails. A rotation servomechanism senses and rotates the lens wheel to the desired orientation during coating. A ring spreader actuator engages springs in the lens wheel to clamp and release the ophthalmic substrate. A control unit regulates servomechanism and ring spreader actuator.

Methods for forming anode structures are provided and include transferring a flexible substrate a first deposition chamber arranged downstream from a first spool chamber, the first deposition chamber containing a first coating drum capable of guiding the flexible substrate past a first plurality of deposition units, and guiding the flexible substrate past the first plurality of deposition units while depositing a lithium metal film on the flexible substrate via the first plurality of deposition units. The method also includes transferring the flexible substrate from the first deposition chamber to a second deposition chamber, the second deposition chamber containing a second coating drum capable of guiding the flexible substrate past a second deposition unit containing a crucible capable of depositing ceramic on the lithium metal film, and guiding the flexible substrate past the crucible while depositing a ceramic protective film on the lithium metal film via the evaporation crucible.

A sputtering chamber component including a front surface, a back surface opposite the front surface, and a sputter trap formed on at least a portion of the back surface, and a coating of metallic particles formed on the sputter trap. The coating has a thickness from about 0.025 mm to about 2.54 mm (0.001 inches to about 0.1 inches) and is substantially free of impurities, and the particles of the coating are substantially diffused.

A chip carrier device includes a frame, a chip support and a limiter. The chip support is disposed on the frame, and includes a supporting film for chips to be adhered thereto. A peripheral portion of the supporting film is attached to a surrounding frame part of the frame. A crossing portion of the supporting film passes through a center of the supporting film, and interconnects two opposite points of the peripheral portion. The supporting film is formed with through holes. The limiter includes a limiting part that interconnects two opposite points of the surrounding frame part, that is positioned corresponding to the crossing portion, and that is positioned on one side of the supporting film where the chips are to be arranged.

A chip carrier device includes a frame, a chip support and a limiter. The chip support is disposed on the frame, and includes a supporting film for chips to be adhered thereto. A peripheral portion of the supporting film is attached to a surrounding frame part of the frame. A crossing portion of the supporting film passes through a center of the supporting film, and interconnects two opposite points of the peripheral portion. The supporting film is formed with through holes. The limiter includes a limiting part that interconnects two opposite points of the surrounding frame part, that is positioned corresponding to the crossing portion, and that is positioned on one side of the supporting film where the chips are to be arranged.

A roller for transporting a flexible substrate is described. The roller includes a first coolant supply for cooling a first part of the roller and a second coolant supply for cooling a second part and a third part of the roller. The first part is provided between the second part and the third part. Additionally, a vacuum processing apparatus including a roller and a method of cooling a roller are described.

A deposition system is provided for guiding a flexible substrate along a deposition path. The deposition system includes a payout hub for unwinding the flexible substrate; a pickup hub for winding the flexible substrate; one or more evaporation sources (300); one or more electrodes (510) spaced apart from the one or more evaporation sources in a first direction; one or more measurement devices (550); and a controller (601) configured to adjust one or more voltages provided to the one more electrodes.

A method and apparatus for processing a surface of a substrate with a cluster apparatus including a transport chamber and two or more process reactors connected to the transport chamber. The method further includes subjecting the surface of the substrate to a surface preparation step for providing a prepared substrate surface, providing an interface layer on the prepared substrate surface of the substrate for forming an interfaced substrate surface, and providing a functional layer on the interfaced substrate surface of the substrate. The process steps are carried out in at least two different process reactors connected to transport chamber the substrate is transported between the at least two process reactors via the transport chamber under vacuum atmosphere.

A method and apparatus for processing a surface of a substrate with a cluster apparatus including a transport chamber and two or more process reactors connected to the transport chamber. The method further includes subjecting the surface of the substrate to a surface preparation step for providing a prepared substrate surface, providing an interface layer on the prepared substrate surface of the substrate for forming an interfaced substrate surface, and providing a functional layer on the interfaced substrate surface of the substrate. The process steps are carried out in at least two different process reactors connected to transport chamber the substrate is transported between the at least two process reactors via the transport chamber under vacuum atmosphere.