A corrosion-resistant member including: a metal base material (10); and a corrosion-resistant coating (30) formed on the surface of the base material (10). The corrosion-resistant coating (30) is a stack of a magnesium fluoride layer (31) and an aluminum fluoride layer (32) in order from the base material (10) side. The aluminum fluoride layer (32) is a stack of a first crystalline layer (32A) containing crystalline aluminum fluoride, an amorphous layer (32B) containing amorphous aluminum fluoride, and a second crystalline layer (32C) containing crystalline aluminum fluoride in order from the magnesium fluoride layer (31) side. The first crystalline layer (32A) and the second crystalline layer (32C) are layers in which diffraction spots are observed in electron beam diffraction images obtained by electron beam irradiation and the amorphous layer (32B) is a layer in which a halo pattern is observed in an electron beam diffraction image obtained by electron beam irradiation.

Substrate processing systems or platforms and methods configured to process substrates including of extreme ultraviolet (EUV) mask blanks are disclosed. Systems or platforms provide a small footprint, high throughput of substrates and minimize defect generation. The substrate processing system platform comprises a single central transfer chamber, a single transfer robot, a substrate flipping fixture, and processing chambers are positioned around the single central transfer chamber.

A method for preparing an erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature. The method comprising the following steps: (a) doping a single crystalline silicon wafer with erbium ion implantation or co-doping the single crystalline silicon wafer with erbium ion and oxygen ion implantation simultaneously to obtain an Er- or Er/O-doped silicon wafer, wherein the single crystalline silicon wafer is a silicon wafer with a germanium epitaxial layer, or an SOI silicon wafer with silicon on an insulating layer or other silicon-based wafers; and (b) subjecting the Er- or Er/O-doped silicon wafer to a deep-cooling annealing treatment, the deep-cooling annealing treatment includes a temperature increasing process and a rapid cooling process.

A component including a steel substrate having a structure that can be transformed into a martensitic structure, a metallic intermediate layer which covers the steel substrate and has a main constituent of titanium and an anticorrosion coating covering the intermediate layer, wherein the anticorrosion coating includes one or more layers and at least the layer of the anticorrosion coating adjoining the metallic intermediate layer is metallic and differs in terms of material from the intermediate layer.

Provided is a method for forming a ferroelectric film of a metal oxide having a fluorite-type structure at a low temperature of lower than 300° C., and a ferroelectric film obtained at a low temperature. The present invention provides a production method of a ferroelectric film comprising a crystalline metal oxide having a fluorite-type structure of an orthorhombic crystal phase, which comprises using a film sputtering method comprising sputtering a target at a substrate temperature of lower than 300° C., to deposit on the substrate a film of a metal oxide which is capable of having a fluorite-type structure of an orthorhombic crystal phase, and having a subsequent thermal history of said film of lower than 300° C.; or applying an electric field to said film after said deposition or after said thermal history of lower than 300° C. Also provided are the ferroelectric film, which is formed on an organic substrate, glass, or metal substrate, which can be used only at low temperatures, and a ferroelectric element and a ferroelectric functional element or device using the ferroelectric film.

Coated substrate comprising a surface coated with a coating comprising at least one coating layer of (TM.sub.1-xAl.sub.x)O.sub.yN, with (0.75-y)≤z≤(1.2-y) and 0.6>y>0, exhibiting a solid solution with B1 cubic structure, wherein x is the content of aluminum in atomic fraction if only aluminum and TM are being considered for the determination of the element composition in atomic percentage, and y is the content of oxygen in atomic fraction if only 0 and N are being considered for the determination of the element composition in atomic percentage, wherein TM is one or more transition metals and 0.05<x<0.95, wherein y correspond to a value of oxygen concentration in the TM.sub.1-xAl.sub.xO.sub.yN.sub.z coating layer that produces an increment of the thermal stability in such a manner that no precipitation w-AlN phase is produced when the coated substrate or at least the coated surface of the coated substrate is exposed to temperatures higher than 1100° C.

A method of producing a ferritic stainless steel sheet comprises subjecting an Al vapor deposited layer-equipped stainless steel sheet to a heat treatment at 600° C. to 1300° C. for 1 minute or more. The Al vapor deposited layer-equipped stainless steel sheet comprises a ferritic stainless steel and an Al vapor deposited layer thereon. The ferritic stainless steel sheet has a thickness of 100 μm or less and a chemical composition containing, in mass %, C: ≤0.030%, Si: ≤1.0%, Mn: ≤1.0%, P: ≤0.040%, S: ≤0.010%, Cr: 11.0-30.0%, Al: 4.0-6.5%, Ni: 0.05-0.50%, Mo: 0.01-6.0%, N: ≤0.020% s, and Zr: 0.01-0.20% and/or Hf: 0.01-0.20%, with a balance consisting of Fe and inevitable impurities. A thickness of the Al vapor deposited layer per one side is 0.5-10.0 μm.

A sintered oxide includes an In.sub.2O.sub.3 crystal, and a crystal A whose diffraction peak is in an incidence angle (2θ) range defined by (A) to (F) below as measured by X-ray (Cu-K α ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).

A coated steel substrate coated with a first coating including above 40 wt. % of chromium and optionally one or several elements chosen from yttrium, silicon, calcium, titanium, zirconium, vanadium, niobium and nickel in an amount below 10 wt. % for each element, the balance being chromium and a second coating including from 2 to 30 wt. % of Aluminum, from 10 to 40 wt. % of chromium and optionally one or several elements chosen from yttrium, silicon, calcium, titanium, zirconium, vanadium, niobium and nickel in an amount below 10 wt. % for each element, the balance being iron, the steel substrate including Cr≤2.0% by weight; a method for the manufacture of this coated steel substrate; a method for the manufacture of a coated hot steel product; a coated hot steel product and the use of a hot steel product.

Provided are an alloy coating steel plate and a method of manufacturing the same, and in this case, the alloy coating steel plate includes a steel, and an Al—Mg—Si alloy layer positioned on the steel plate, wherein the Al—Mg—Si alloy layer is formed to include Mg—Si alloy grains in an alloy layer configured in an Al—Mg alloy phase.