A coating-substrate combination includes: a Ni-based superalloy substrate comprising, by weight percent: 2.0-5.1 Cr; 0.9-3.3 Mo; 3.9-9.8 W; 2.2-6.8 Ta; 5.4-6.5 Al; 1.8-12.8 Co; 2.8-5.8 Re; 2.8-7.2 Ru; and a coating comprising, exclusive of Pt group elements, by weight percent: Ni as a largest content; 5.8-9.3 Al; 4.4-25 Cr; 3.0-13.5 Co; up to 6.0 Ta, if any; up to 6.2 W, if any; up to 2.4 Mo, if any; 0.3-0.6 Hf; 0.1-0.4 Si; up to 0.6 Y, if any; up to 0.4 Zr, if any; up to 1.0 Re, if any.

Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

A nitride semiconductor substrate (11, 21) includes: a substrate (2); and an AlN-containing film (100, 200) provided above the substrate (2). A thickness of the AlN-containing film (100, 200) is at most 10000 nm, and a threading dislocation density of the AlN-containing film (100, 200) is at most 2×10.sup.8 cm.sup.−2.

A physical vapor deposition system includes a deposition chamber, a support to hold a substrate in the deposition chamber, a target in the chamber, a power supply configured to apply power to the target to generate a plasma in the chamber to sputter material from the target onto the substrate to form a piezoelectric layer on the substrate, and a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target. Each deposition phase lasts at least 30 seconds and each cooling phase lasts at least 30 seconds.

A high-temperature component of a refractory metal or a refractory metal alloy has an emissivity-increasing coating. The coating is formed of tantalum nitride and/or zirconium nitride; and tungsten with a tungsten content between 0 and 98 wt. %.

A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.

According to the present invention, a method for manufacturing a rare earth magnet that is capable of manufacturing a high-performance rare earth magnet with stable quality in large amount by the grain boundary diffusion method utilizing a film formed by the physical vapor phase deposition method is provided.

A transparent conductive film (3) includes a polycrystal (31). The polycrystal (31) has grains (32). The grains (32) have an average value Df of a maximum Feret diameter of 160 to 400 nm.

A method may produce a ceramic part with a mother-of-pearl effect, in particular for watchmaking. Such methods may include: forming a ceramic body; depositing a layer of an oxy-nitride component of the OxNy type on at least a portion of the ceramic body; and oxidizing at least a portion of the oxy-nitride layer, preferably by heating.

A glazing includes a glass substrate on which is deposited a coating including at least one layer, the layer being formed from a material including metal nanoparticles dispersed in an inorganic matrix of an oxide, in which the metal nanoparticles are made of a metal chosen from the group formed by silver, gold, platinum, copper and nickel or of an alloy formed from at least two of these metals, in which the matrix including an oxide of at least one element chosen from the group of titanium, silicon and zirconium and in which the atomic ratio M/Me in the material is less than 1.5, M representing all atoms of the elements of the group of titanium, silicon and zirconium present in the layer and Me representing all of the atoms of the metals of the group formed by silver, gold, platinum, copper and nickel present in the layer.