The present invention provides methods to sputter deposit films comprising alkali metal compounds. At least one target comprising one or more alkali metal compounds and at least one metallic component is sputtered to form one or more corresponding sputtered films. The at least one target has an atomic ratio of the alkali metal compound to the at least one metallic component in the range from 15:85 to 85:15. The sputtered film(s) incorporating such alkali metal compounds are incorporated into a precursor structure also comprising one or more chalcogenide precursor films. The precursor structure is heated in the presence of at least one chalcogen to form a chalcogenide semiconductor. The resultant chalcogenide semiconductor comprises up to 2 atomic percent of alkali metal content, wherein at least a major portion of the alkali metal content of the resultant chalcogenide semiconductor is derived from the sputtered film(s) incorporating the alkali metal compound(s). The chalcogenide semiconductors are useful in microelectronic devices, including solar cells.

The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include nickel tungsten tantalum oxide (NiWTaO). This material is particularly beneficial in that it is very transparent in its clear state.

Various embodiments herein relate to electrochromic devices, methods of fabricating electrochromic devices, and apparatus for fabricating electrochromic devices. In a number of cases, the electrochromic device may be fabricated to include a particular counter electrode material. The counter electrode material may include a base anodically coloring material. The counter electrode material may further include one or more halogens. The counter electrode material may also include one or more additives.

A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species.

A method for making a conductive film includes the steps of: depositing a conductive metal film on a substrate to form a metal-coated substrate; depositing a fiber pattern on the conductive metal film of the metal-coated substrate to form a masked substrate, the fiber pattern defining protected metal and exposed metal of the conductive metal film; removing the exposed metal from the conductive metal film of the masked substrate to form a protected conductive film; and removing the fiber pattern from the protected conductive film to expose the protected metal and provide a metal pattern on the substrate. An annealing step con be employed after depositing the fiber pattern to increase the surface area of contact between the fiber pattern and the conductive metal film.

In an Al coating layer-equipped stainless steel sheet, a base steel sheet has a predetermined chemical composition, and a total content of Fe and Cr at a first depth of an Al coating layer is 20 mass % to 70 mass %.

The present invention relates to a flexible substrate and a method of manufacturing same and, more particularly, to a flexible substrate and a method of manufacturing same, the flexible substrate having high flexibility, high transparency, and high conductivity, so as to be able to improve the quality of a flexible display device to which it is applied. To this end, the present invention provides a flexible substrate and a method of manufacturing same, the flexible substrate characterized by comprising: a flexible base material; an ITO thin film formed on the flexible base material; and a plurality of nano particles discontinuously distributed within the ITO thin film.

A rare earth thin-film magnet of a Nd—Fe—B film deposited on a Si substrate, wherein, when the film thickness of the rare earth thin film is 70 μm or less, the Nd content satisfies the conditional expression of 0.15≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio; when the film thickness of the rare earth thin film is 70 μm to 115 μm (but excluding 70 μm), the Nd content satisfies the conditional expression of 0.18≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio; and when the film thickness of the rare earth thin film is 115 μm to 160 μm (but excluding 115 μm), the Nd content satisfies the conditional expression of 0.20≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio. An object of the present invention is to provide a rare earth thin-film magnet having a maximum film thickness of 160 μm and which is free from film separation and substrate fracture, and a method of producing such a rare earth thin-film magnet by which the thin film can be stably deposited.

There is disclosed a protected item including an item that needs protection and a protective coating having a hardness of at least about 8 on the Mohs scale. The protected item includes a light transmission in part or all of the visible wavelength of at least about 60% and a light reflection in the visible wavelength of about 4% or less.

The invention relates to a process for fabricating a solar cell. The process comprises depositing a layer of amorphous silicon on a substrate using physical vapour deposition, said substrate being a layer of a dielectric disposed on a silicon wafer. The amorphous silicon is then annealed so as to generate a layer of polycrystalline silicon on the substrate.