C23C14/5826

FLEXIBLE SUBSTRATE AND METHOD OF MANUFACTURING SAME

The present invention relates to a flexible substrate and a method of manufacturing same and, more particularly, to a flexible substrate and a method of manufacturing same, the flexible substrate having high flexibility, high transparency, and high conductivity, so as to be able to improve the quality of a flexible display device to which it is applied. To this end, the present invention provides a flexible substrate and a method of manufacturing same, the flexible substrate characterized by comprising: a flexible base material; an ITO thin film formed on the flexible base material; and a plurality of nano particles discontinuously distributed within the ITO thin film.

ALUMINUM-BORON NITRIDE NANOTUBE COMPOSITES AND METHOD FOR MAKING THE SAME

Aluminum-boron nitride nanotube composites and methods of making thereof are disclosed herein. In at least one specific embodiment, the method can include: at least partially coating boron nitride nanotubes with aluminum to make an aluminum-boron nitride nanotube layered structure, where the at least partially coating is performed by sputter deposition, and where the boron nitride nanotubes have a length of about 100 μm to about 300 μm; sintering the aluminum-boron nitride nanotube layered structure to make an aluminum-boron nitride nanotube pellet, where the sintering is performed by spark plasma sintering; and rolling the aluminum-boron nitride nanotube pellet to make the aluminum-boron nitride nanotube composite.

Solar selective coating having high thermal stability and a process for the preparation thereof

The present invention describes an improved multilayer solar selective coating useful for solar thermal power generation. Solar selective coating of present invention essentially consists of Ti/Chrome interlayer, two absorber layers (AlTiN and AlTiON) an anti-reflection layer (AlTiO). Coating deposition process uses Ti and Al as the source materials, which are abundantly available and easy to manufacture as sputtering targets for industrial applications. The present invention allows deposition of all the layers in a single sputtering chamber on flat and tubular substrates with high absorptance and low emittance, thus making the process simpler and cost effective. The process of the present invention can be up-scaled easily for deposition on longer tubes with good uniformity and reproducibility. The coating of the present invention also displays improved adhesion, UV stability, corrosion resistance and stability under extreme environments.

Method for evaluating semiconductor film and method for manufacturing semiconductor device

A method for evaluating a semiconductor film of a semiconductor device which is configured to include an insulating film, the semiconductor film, and a conductive film and to have a region where the semiconductor film and the conductive film overlap with each other with the insulating film provided therebetween, includes a step of performing plasma treatment after formation of the insulating film, and a step of calculating a peak value of resistivity of a microwave in the semiconductor film by a microwave photoconductive decay method after the plasma treatment, so that the hydrogen concentration in the semiconductor film is estimated.

Method of, and apparatus for, forming hard mask
09779958 · 2017-10-03 · ·

A method of forming a hard mask includes depositing step for depositing a titanium nitride film on a surface of a to-be-processed object; adsorbing step for adsorbing oxygen-containing molecules onto a surface of the titanium nitride film; and heating step for heating the titanium nitride film to a predetermined temperature.

METHODS OF FABRICATING A MULTI-ELECTRODE ARRAY FOR SPINAL CORD EPIDURAL STIMULATION
20170246450 · 2017-08-31 ·

In certain embodiments an electrode array for epidural stimulation of the spinal cord is provided where the array comprises a plurality of electrodes disposed on a flexible polymer substrate; said electrodes being electrically connected to one or more lead wires and/or connection points on an electrical connector; where the electrodes of said array are bonded to said polymer so that the electrodes can carry an electrical stimulation signal having a voltage, frequency, and current sufficient to provide epidural stimulation of a spinal cord and/or brain in vivo or in a physiological saline solution, without separation of all or a part of an electrode from the polymer substrate.

Insulated radiant barriers in apparel

Fabrics made for apparel, tents, sleeping bags and the like, in various composites, constructed such that a combination of substrate layers and insulation layers is configured to provide improved thermal insulation. The fabric composites are constructed to form a radiant barrier against heat loss via radiation and via conduction from a body.

METHODS AND SYSTEMS FOR DEPOSITING A LAYER
20220235460 · 2022-07-28 ·

Systems for depositing materials and related methods are described. The systems allow condensing or depositing a precursor on a substrate, and then curing condensed or deposited precursor to form a layer.

Highly-ordered nano-structure array and Fabricating Method thereof
20210404054 · 2021-12-30 ·

A highly-ordered nano-structure array, formed on a substrate, mainly comprises a plurality of highly-ordered nano-structure units. Each of the highly-ordered nano-structure units forms a receiving compartment. One end of the receiving compartment opposite to the substrate has an opening. Each of the highly-ordered nano-structure units comprises at least one thin film layer. A periphery and a bottom of the receiving compartment are defined by an inner surface of a surrounding portion of the at least one thin film layer and a top surface of a bottom portion of the at least one thin film layer, respectively. The at least one thin film layer is made of at least one material selected from the group consisting of: metal, alloy, oxide, nitride, and sulfide.

MANUFACTURING METHOD OF METAL OXIDE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
20210398809 · 2021-12-23 ·

A semiconductor device with high reliability is provided. A first step of forming a metal oxide containing indium over a substrate and a second step of performing microwave treatment from above the metal oxide are included. The first step is performed by a sputtering method using an oxide target containing indium. The second step is performed using a gas containing oxygen under reduced pressure, and by the second step, a defect in which hydrogen has entered an oxygen vacancy (VoH) in the metal oxide is divided into an oxygen vacancy (Vo) and hydrogen (H).