A component for use in a plasma processing chamber is provided. A metal containing component body is provided. A sealant coating is over a surface of the metal containing component body, wherein the sealant coating comprises at least one of a silicone sealant, an organic sealant, or epoxy sealant, wherein the sealant coating is not covered and directly exposed to plasma in the plasma processing chamber.

A method for selectively passivating a surface of a substrate, wherein the surface of the substrate includes at least a first surface comprising silicon nitride and at least a second surface comprising a material other than silicon nitride. The method includes the step of exposing the surface to at least one organoisocyanate wherein the organoisocyanate selectively reacts with the silicon nitride to passivate the first surface thereby leaving the second surface substantially unreacted.

Aluminum-boron nitride nanotube composites and methods of making thereof are disclosed herein. In at least one specific embodiment, the method can include: at least partially coating boron nitride nanotubes with aluminum to make an aluminum-boron nitride nanotube layered structure, where the at least partially coating is performed by sputter deposition, and where the boron nitride nanotubes have a length of about 100 μm to about 300 μm; sintering the aluminum-boron nitride nanotube layered structure to make an aluminum-boron nitride nanotube pellet, where the sintering is performed by spark plasma sintering; and rolling the aluminum-boron nitride nanotube pellet to make the aluminum-boron nitride nanotube composite.

A self-cleaning film system includes a substrate and an anti-reflection film disposed on the substrate. The anti-reflection film includes a first sheet formed from titanium dioxide, a second sheet formed from silicon dioxide and disposed on the first sheet, and a third sheet formed from titanium dioxide and disposed on the second sheet. The system includes a self-cleaning film disposed on the anti-reflection film and including a monolayer disposed on the third sheet and formed from a fluorinated material selected from the group consisting of fluorinated organic compounds, fluorinated inorganic compounds, and combinations thereof. The self-cleaning film includes a first plurality of regions disposed within the monolayer such that each of the first plurality of regions abuts and is surrounded by the fluorinated material and includes a photocatalytic material.

A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate toward the supporting substrate. A ratio (t2/t1) of a width t2 at an end of the void on a side of the supporting substrate with respect to a width t1 at an end of the void on a side of the piezoelectric material substrate is 0.8 or lower.

A coated medical instrument can include a first layer bonded to a metal substrate surface of a medical instrument, a second layer bonded to the first layer, and a third layer disposed on the second layer, The first layer comprises chromium (Cr), hafnium (Hf), titanium (Ti), and/or niobium (Nb). The second layer comprises a nitride, oxide, carbide, carbonitride, or boride of chromium (Cr), hafnium (Hf), niobium (Nb), tungsten (W), titanium (Ti), aluminum (Al), zirconium (Zr), and/or silicon (Si). The third layer comprises a nitride, oxide, carbide, boride, oxynitride, oxycarbide, or oxycarbonitride of chromium (Cr), hafnium (Hf), niobium (Nb), tungsten (W), titanium (Ti), aluminum (Al), zirconium (Zr), and/or silicon (Si). Methods for making coated medical instruments are also disclosed herein.

A method for depositing a large-area graphene layer and an apparatus for continuous graphene deposition using the same are disclosed. The method can include forming a titanium (Ti) layer on a substrate by sputtering, reducing the titanium layer by spraying a reductant gas containing a hydrogen gas (H.sub.2) and a purge gas onto the titanium layer while moving in a first direction in relation to the substrate and exhausting the reductant gas and the purge gas. The method can also include forming graphene by spraying a reactant gas containing a graphene source and the purge gas onto the titanium layer while moving in a second direction opposite the first direction in relation to the substrate and exhausting the reactant gas and the purge gas.

Embodiments described herein provide methods of forming amorphous or nano-crystalline ceramic films. The methods include depositing a ceramic layer on a substrate using a physical vapor deposition (PVD) process, discontinuing the PVD process when the ceramic layer has a predetermined layer thickness, sputter etching the ceramic layer for a predetermined period of time, and repeating the depositing the ceramic layer using the PVD process, the discontinuing the PVD process, and the sputter etching the ceramic layer until a ceramic film with a predetermined film thickness is formed.

Methods and apparatus for lowering resistivity of a metal line, including: depositing a first metal layer atop a second metal layer to under conditions sufficient to increase a grain size of a metal of the first metal layer; etching the first metal layer to form a metal line with a first line edge roughness and to expose a portion of the second metal layer; removing impurities from the metal line by a hydrogen treatment process; and annealing the metal line at a pressure between 760 Torr and 76,000 Torr to reduce the first line edge roughness.

Disclosed herein is a method of preparing a white light-emitting material. The method of preparing a white light-emitting material includes the steps of: (a) depositing a metal for the formation of a blue light-emitting material on a substrate by performing thermal evaporation; (b) forming a material in which green and blue light-emitting materials are hybridized by placing the substrate, on which the metal film is deposited in step (a), in a plasma-enhanced chemical vapor deposition (PECVD) reactor and exposing the substrate to silicon (Si) and oxygen (O) in a plasma state; and (c) forming a red light-emitting material in the material formed in step (b) by annealing the material formed in step (b) so that the red, green and blue light-emitting materials are hybridized.