Vacuum-treating a substrate or manufacturing a vacuum-treated substrate, including the steps: exposing a substrate in a vacuum chamber to a plasma environment, the plasma environment including a first plasma of a material deposition source and a second plasma of a non-deposition source; operating the plasma environment repeatedly between a first and a second state, the first state being defined by: a higher plasma supply power to the first plasma causing a higher material deposition rate and a lower plasma supply power delivered to the second plasma, the second state being defined by: a lower plasma supply power to the first plasma, compared with the higher plasma supply power to the first plasma and causing a lower material deposition rate and a higher plasma supply power to the second plasma, compared with the lower plasma supply power to the second plasma. Also, a vacuum deposition apparatus adapted to perform the method.

A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate toward the supporting substrate. A ratio (t2/t1) of a width t2 at an end of the void on a side of the supporting substrate with respect to a width t1 at an end of the void on a side of the piezoelectric material substrate is 0.8 or lower.

A method for forming a low-resistivity tantalum thin film having the following steps: depositing a tantalum layer on a substrate, the tantalum of the layer having a phase, treating the deposited tantalum layer by exposure to a radio frequency hydrogen plasma, such that the layer has tantalum in a mixed - phase, at least partially desorbing the hydrogen by carrying out at least one of the following steps: exposure to a radio frequency inert gas plasma, and thermal annealing. The treatment step being configured such that the tantalum layer is subjected to temperatures of less than or equal to 300 C.

Disclosed herein is a method of preparing a white light-emitting material. The method of preparing a white light-emitting material includes the steps of: (a) depositing a metal for the formation of a blue light-emitting material on a substrate by performing thermal evaporation; (b) forming a material in which green and blue light-emitting materials are hybridized by placing the substrate, on which the metal film is deposited in step (a), in a plasma-enhanced chemical vapor deposition (PECVD) reactor and exposing the substrate to silicon (Si) and oxygen (O) in a plasma state; and (c) forming a red light-emitting material in the material formed in step (b) by annealing the material formed in step (b) so that the red, green and blue light-emitting materials are hybridized.

A tantala ring resonator includes a tantala ring resonator formed by ion-beam sputtering of tantalum pentoxide and exhibiting an optical quality factor in excess of 310.sup.6, and a substrate to which the tantala ring resonator is attached. A method for fabricating nonlinear photonic devices includes depositing tantalum pentoxide with ion-beam sputtering to form a tantala layer onto a substrate, annealing the tantala layer, and etching the tantala layer to form a photonic device.

A versatile, thermally stable and economically effective corrosion inhibition treatment for copper (Cu) metal and selected metals surface through a single step chemical vapor deposition (CVD) of selected inhibitor compounds at temperatures as low as 100-200 C. is described in this invention. The resulting CVD deposited inhibition coating is thermally stable to 300 C. and protects Cu and selected metals from active corrosion in various technologically important operational environments. The selective coating for copper metal is achieved by controlling the chemistry of bonding between the Copper metal surface and inhibitor material used. The technique can be accomplished by using one or more inhibitors separately or in combination in order to create an all-terrain stable & robust corrosion prevention coating for copper metal.

A photonic device includes a substrate and a tantala ring resonator on the substrate. The tantala ring resonator has at least one of (i) a quality factor exceeding three million and (ii) a threshold power less than one hundred milliwatts. A frequency-comb generation method includes sweeping the output frequency of a laser coupled to a tantala ring resonator that has at least one of (i) a quality factor exceeding three million and (ii) a threshold power less than one hundred milliwatts.

In a manufacturing method for an organic EL display device according to an embodiment, a support substrate is mounted on a surface of a vapor deposition mask (S3) which surface faces a vapor deposition source and has been subjected to a modification treatment (S2), and a desired organic material is evaporated to the vapor deposition mask, so as to deposit an organic layer formed of multiple layers in a desired area on the support substrate (S4), and further a second electrode is formed on the organic layer (S8). An exposed surface of the vapor deposition mask or an exposed surface of the organic layer formed on the vapor deposition mask is modified at at least one timing among: before depositing the organic layer formed of the multiple layers; before or after depositing each organic layer of the multiple layers forming the organic layer; and before forming the second electrode.

Provided is a negative ion irradiation device in which an object is irradiated with a negative ion. The device includes a chamber that allows the negative ion to be generated therein, a gas supply unit that supplies a gas which is a raw material for the negative ion, a plasma generating portion that generates plasma, a voltage applying unit that applies a voltage to the object, a control unit that performs control of the gas supply unit, the plasma generating portion, and the voltage applying unit. The control unit controls the gas supply unit to supply the gas into the chamber, controls the plasma generating portion to generate the plasma in the chamber and to generate the negative ion by stopping the generation of the plasma, and controls the voltage applying unit to start voltage application during plasma generation and to continue voltage application after plasma generation stop.

A deposition system includes a system housing having a housing interior, a fixture transfer assembly having a generally sloped fixture transfer rail extending through the housing interior, a plurality of sequentially ordered deposition chambers connected by the fixture transfer rail, a controller interfacing with the processing chambers and at least one fixture carrier assembly carried by the fixture transfer rail and adapted to contain at least one substrate. The fixture carrier assembly travels along the fixture transfer rail under influence of gravity. A substrate fixture contains a substrate. The substrate fixture comprises a fixture frame. The fixture frame is defined by multiple circular members adjacently joined in a circular arrangement. Each circular member has a fixture frame opening sized to receive the substrate. Lens support arms may integrate into the circular members, extending in a curved disposition into the fixture frame opening to retain the substrate. A deposition method is also disclosed.