A boron doped diamond electrode and its preparation method and application, the electrode is deposited with a boron or nitrogen doped diamond layer or a boron or nitrogen doped diamond layer composite layer on the surface of the electrode substrate, or after a transition layer is disposed on the surface of the substrate, a boron or nitrogen doped diamond layer or a composite layer of boron or nitrogen doped diamond layer is disposed on the surface of transition layer. The preparation method is depositing or plating a boron or nitrogen doped diamond layer on the surface of the electrode substrate, or providing a transition layer on the surface of the electrode substrate, and then depositing or plating a boron or nitrogen doped diamond layer or a composite layer of boron or nitrogen doped diamond layer on the surface of the transition layer.

A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.

A film formation method of introducing, into a film formation chamber, a vaporized material obtained by vaporizing a liquid-form organic material in a vaporizing chamber and forming a vapor deposition film composed of the vaporized material on a surface of a film formed substrate placed within the film formation chamber. The method includes: holding an internal temperature of the vaporizing chamber at a lower temperature than a reaction temperature at which the organic material polymerizes; holding an internal pressure of the vaporizing chamber at a saturated vapor pressure of the organic material; setting an internal temperature of the film formation chamber to the same temperature as the internal temperature of the vaporizing chamber; and forming the film in a state where the film formed substrate is held at a temperature lower than the internal temperature of the film formation chamber.

Methods for treating a thin film made from a conductive or semiconductive material may improve the crystalline quality thereof. Such methods may include: supplying a substrate including, on one of the faces thereof, a thin film of the material; and biased plasma treating the assembly formed by the substrate and the thin film at a given temperature and for a given time, so as to obtain a crystalline reorganization over a depth of the thin film, the biased plasma treatment including an electrical biasing of the thin film and an exposure of the film thus biased to a hydrogen plasma, the biased plasma treatment being implemented at a temperature that is below the melting points of the thin film and of the substrate.

A film formation method of introducing, into a film formation chamber, a vaporized material obtained by vaporizing a liquid-form organic material in a vaporizing chamber and forming a vapor deposition film composed of the vaporized material on a surface of a film formed substrate placed within the film formation chamber. The method includes: holding an internal temperature of the vaporizing chamber at a lower temperature than a reaction temperature at which the organic material polymerizes; holding an internal pressure of the vaporizing chamber at a saturated vapor pressure of the organic material; setting an internal temperature of the film formation chamber to the same temperature as the internal temperature of the vaporizing chamber; and forming the film in a state where the film formed substrate is held at a temperature lower than the internal temperature of the film formation chamber.

A simplified switchable object and methods of making same are provided. The methods may include steps of applying a switchable material on a first surface of a first substrate, the switchable material having a thickness and a shape; applying a barrier material on the first substrate, circumferential to the switchable material; and applying a second substrate over top of, and in contact with, the switchable material and the barrier material, the first substrate, second substrate and barrier material defining a closed chamber encapsulating the switchable material. The methods may further include a step of applying a seal material.

Embodiments described herein provide methods of forming amorphous or nano-crystalline ceramic films. The methods include depositing a ceramic layer on a substrate using a physical vapor deposition (PVD) process, discontinuing the PVD process when the ceramic layer has a predetermined layer thickness, sputter etching the ceramic layer for a predetermined period of time, and repeating the depositing the ceramic layer using the PVD process, the discontinuing the PVD process, and the sputter etching the ceramic layer until a ceramic film with a predetermined film thickness is formed.

A reflector for helio-thermal systems may include a metallic carrier plate and a reflective coating that is applied to the carrier plate and is constructed from at least one metallic reflective layer and at least one protective layer applied to the reflective layer. Such reflectors have high reflective capabilities, are robust in relation to mechanical stress, and can be manufactured cost effectively. Such reflectors are also lightweight and dimensionally stable due to the fact that the carrier plate may be formed from a sandwich plate having at least one nonmetallic intermediate layer disposed between an upper and lower metallic cover plate. The upper cover plate may have a smoothed surface to which the reflective layer can be applied. The smoothed surface prior to the reflective layer being applied may have an arithmetic mean surface parameter Ra of less than 0.03 m. Methods for manufacturing such reflectors are also disclosed.

A simplified switchable object and methods of making same are provided. The methods may include steps of applying a switchable material on a first surface of a first substrate, the switchable material having a thickness and a shape; applying a barrier material on the first substrate, circumferential to the switchable material; and applying a second substrate over top of, and in contact with, the switchable material and the barrier material, the first substrate, second substrate and barrier material defining a closed chamber encapsulating the switchable material. The methods may further include a step of applying a seal material.

A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.