Provided are: a grain-oriented electromagnetic steel sheet exhibiting excellent coating film adhesion and excellent magnetic characteristics; and a method for producing this grain-oriented electromagnetic steel sheet. This grain-oriented electromagnetic steel sheet is provided with a ceramic coating film arranged on a steel sheet, and an oxide insulating tension coating film arranged on the ceramic coating film. The ceramic coating film contains a nitride and an oxide; the nitride contains at least one element selected from the group consisting of Cr, Ti, Zr, Mo, Nb, Si, Al, Ta, Hf, W and Y; and the oxide has a corundum crystal structure. The Young's modulus of the ceramic coating film as determined by a nanoindentation method is 230 GPa or more; the average film thickness of the ceramic coating film is from 0.01 m to 0.30 m (inclusive); and the tension of the oxide insulating tension coating film is 10 MPa or more.

An article comprises a body having a coating. The coating comprises a Y-O-F coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

A composite coating for a metal forming member includes a first layer disposed on said metal forming member. The first layer includes chromium nitride doped with at least one dopant such as tungsten. A second layer is disposed atop said first layer, said second layer including a lubricious material having a coefficient of friction of less than or equal to 0.2 as measured against low alloy steel.

The present invention provides a Cr-rich cathodic arc coating, an article in turbine blade coated with the chromizing over cathodic arc coating, and a method to produce the coating thereof. The Cr-rich cathodic arc coating in the present invention comprises a cathodic arc coating and a diffusion coating deposited atop the cathodic arc coating to enforce hot corrosion resistance. The hardware coated with the chromizing over cathodic arc coating in the present invention is reinforced with superior-hot corrosion resistance. The present invention further provides a novel method for producing the chromizing over cathodic arc coating by re-sequencing coating deposition order. The method in the present invention is efficient and cost-reducing by eliminating some operations, e.g., DHT and peening, between the cathodic arc coating and the diffusion coating. The hot corrosion resistance in the present invention results from the high Cr content in the surface of the coating.

A method for producing an organic EL device in this disclosure includes the steps of providing an element substrate including a substrate and a plurality of organic EL devices arranged on the substrate; and forming a thin film encapsulation structure over the element substrate. The step of forming the thin film encapsulation structure includes the steps of forming a first inorganic barrier layer over the element substrate; condensing a photocurable resin on the first inorganic barrier layer; irradiating a plurality of selected regions of the photocurable resin with a laser beam to cure at least a part of the photocurable resin, thus to form a photocurable resin layer; removing an uncured part of the photocurable resin; and forming a second inorganic barrier layer, covering the photocurable resin layer, on the first inorganic barrier layer.

According to certain embodiments, a method of producing a pattern on a substrate comprises securing a flexible polymeric substrate, printing a layer of ink as a negative pattern on the substrate, and placing the flexible polymeric substrate in a vacuum chamber. The method further includes uniformly applying, while the flexible polymeric is under a vacuum in the vacuum chamber, a layer of material over both the layer of ink and the substrate via physical vapor deposition and then removing the flexible polymeric substrate from the vacuum chamber. The method further includes removing the ink and material applied over the ink by immersing the flexible polymeric substrate in a solvent such that it results in a desired pattern of the material on the flexible polymeric substrate.

A laminate, a display device including the laminate, and an article including the display, the laminate including a substrate, a protective layer, and an intermediate layer provided between the substrate and the protective layer, wherein the protective layer includes a fluorine-containing (poly)ether amide silane compound represented by Formula 1 and having a molecular weight greater than 2,000 Da, and the intermediate layer includes at least one SiO bond and having a density greater than about 2.0 g/cm.sup.3 and less than about 2.5 g/cm.sup.3,
Rf-(L1).sub.p1-Q1-(L2).sub.p2-Si(R.sub.1)(R.sub.2)(R.sub.3)Formula 1 wherein, in Formula 1, Rf, L1, p1, Q1, L2, p2, R.sub.1 to R.sub.3 are the same as described in the specification.

A method of decreasing a sheet resistance of a transparent conductor is disclosed. The method includes the following: forming a first transparent conductor layer on a substrate; dispensing a metallic nanoparticle composition on the first transparent conductor layer to form metallic nanoparticle features; and sintering at least the first transparent conductor layer and the metallic nanoparticle features. The first transparent conductor layer includes a crystalline metal oxide. The aperture ratio of the transparent conductor is in a range of 90% to 99%. A multilayer transparent conductor and a method of forming a multilayer transparent conductor are also disclosed.

Embodiments of methods and associated apparatus for filling features in a silicon-containing dielectric layer of a substrate are provided herein. In some embodiments, a method of filling features in a silicon-containing dielectric layer of a substrate includes: depositing a discontinuous liner layer in the feature via a physical vapor deposition (PVD) process in a first process chamber; performing a hydrogen plasma process in a second process chamber to form silicon-hydrogen bonds on surfaces of the feature not covered by the discontinuous liner layer; and depositing a bulk tungsten layer on the discontinuous liner layer and over the silicon-hydrogen bonds to fill the feature with tungsten in a third process chamber.

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (la), (lb), (lc), (Id), (lla), (lib), (lie), or (lid) wherein A is O or NRN, R and R.sup.N is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, R.sup.1, R.sup.2, R.sup.3, and R.sup.4 is hydrogen, an alkyl group, an alkenyl group, an aryl group, a silyl group, or an ester group, and E is nothing, oxygen, methylene, ethylene, or 1,3-propylene.

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