A nanopore structure includes an aperture extending from a first surface to a second surface of a substrate, the aperture having a wall comprising gold ions embedded in the substrate, the wall defining a first diameter; a first deoxyribonucleic acid (DNA) layer including a thiolated DNA strand covalently bonded to the embedded gold ions within the wall of the aperture; and a second DNA layer hydrogen bonded to the first DNA layer, the second DNA layer defines a substantially cylindrical nanopore that defines a second diameter within the wall of the aperture, the second DNA layer including a single-stranded DNA strand; wherein the second diameter is less than the first diameter.

Multi-metal oxide coatings, and related devices and related methods are provided, among other things. A device comprises a substrate, and a coating on the substrate. The coating comprises a multi-metal oxide. The multi-metal oxide comprises a first species and a second species. A concentration of at least one of the first species, the second species, or any combination thereof, varies through a thickness of the coating. The device can be a component used in a semiconductor manufacturing process.

A vacuum treatment apparatus includes a deposition unit and a plasma treatment unit. The deposition unit includes an evaporation source including a lithium metal and forms a lithium metal film on a base material. The plasma treatment unit exposes a surface of the lithium metal film formed on the base material to a discharge gas obtained by discharging a gas containing carbon and oxygen, and forms a lithium carbonate layer on the surface.

Exemplary processing methods may include translating a lithium film beneath a first showerhead. The methods may include introducing an oxidizer gas through the first showerhead onto the lithium film. The methods may include forming an oxide monolayer on the lithium film. The oxide monolayer may be or include the oxidizer gas adsorbed on the lithium film. The methods may include translating the lithium film beneath a second showerhead after forming the oxide monolayer. The methods may include introducing a carbon source gas through the first showerhead onto the lithium film. The methods may also include converting the oxide monolayer into a carbonate passivation layer through reaction of the oxide monolayer with the carbon source gas.

Provided are a laminated body and a laminated body manufacturing method that can improve adhesiveness between a resin layer and a seed layer. The laminated body has a substrate, a first wiring layer, a resin layer, and a second wiring layer in this order, and the second wiring layer includes at least an adhesive layer and a seed layer in this order.

Provided are a laminated body and a laminated body manufacturing method that can improve adhesiveness between a resin layer and a seed layer. The laminated body has a substrate, a first wiring layer, a resin layer, and a second wiring layer in this order, and the second wiring layer includes at least an adhesive layer and a seed layer in this order.

A method for forming an Ag/AgCl coated electrode includes providing a polymeric electrode substrate made of Acrylonitrile Butadiene Styrene (ABS). A layer of silver (Ag) is deposited on the polymeric electrode substrate using physical vapor deposition (PVD) to form an Ag coated electrode. The layer of Ag is deposited to a first thickness by sputtering an Ag target onto the polymeric electrode substrate. The Ag coated electrode is then converted to a layer of silver/silver chloride (Ag/AgCl) by dipping it into a conversion solution. The resulting Ag/AgCl coated surface electrode provides improved performance and stability for various applications.

A method for preparing an AlN substrate includes: (A) providing a surface-polished polycrystalline aluminum nitride (AlN) substrate; (B) forming a first AlN film via reactive sputtering using magnetron sputtering with an aluminum target, nitrogen, and argon gases to fill surface lattice defect pores; (C) removing the first AlN film by thinning and polishing, leaving filled pore areas to form a planar AlN substrate; (D) sintering the planar substrate at high temperature to enhance adhesion; (E) forming a second AlN film on the sintered AlN substrate; (F) removing the second AlN film by thinning and polishing to achieve a final AlN substrate with high thermal conductivity and low surface pore sizes.

A processing apparatus for processing a flexible substrate is described. The processing apparatus includes a vacuum processing chamber including at least one deposition source for depositing a layer of material on the flexible substrate. Further, the processing apparatus includes a postprocessing chamber comprising a post-processing roller and a gas supply. The post processing roller has a substrate facing surface comprising a plurality of gas outlets. The gas supply is connected to the post processing roller to provide a gas through the plurality of gas outlets into an interspace between the flexible substrate and the substrate facing surface

A method for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. In some embodiments, a first in-situ process including a pre-treatment process of the work-function metal layer is performed. By way of example, the pre-treatment process removes an oxidized layer of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the first in-situ process, a second in-situ process including a deposition process of another metal layer over the treated work-function metal layer is performed.