In some embodiments, the present disclosure pertains to a method of forming metalorganic frameworks. In some embodiments, the method includes exposing a plurality of zerooxidation state metal atoms to an oxidizing agent. In some embodiments, the exposing facilitates oxidation of the plurality of zero-oxidation state metal atoms to a plurality of metallic ions. In some embodiments, the plurality of metallic ions react with a plurality of ligands to form the metal-organic frameworks. In some embodiments, the formed metal-organic frameworks comprise one or more metals and one or more ligands coordinated with the one or more metals.

A silicon carbide crystal growing apparatus includes a physical vapor transport unit and an atomic layer deposition unit. The physical vapor transport unit has a crystal growing furnace configured to grow a silicon carbide crystal in an internal space of the crystal growing furnace. The atomic layer deposition unit is coupled to the crystal growing furnace and configured to perform an atomic doping operation on the silicon carbide crystal. A silicon carbide crystal growing method is also provided.

Provided is a method of manufacturing a mask includes preparing a first conductive layer. The first conductive layer includes a third portion having a mesh shape in a plurality of cell regions on a substrate, a second portion disposed between the cell regions, and a first portion surrounding the third portion and the second portion. The method further includes preparing a second conductive layer including at least one opening on the first conductive layer. The method also includes oxidizing a part of the first conductive layer exposed through the at least one opening of the second conductive layer. The method further includes preparing a plating layer on the first conductive layer and the second conductive layer, and removing the first conductive layer and the second conductive layer from the plating layer.

Methods and techniques are presented to inhibit crystallization in optical waveguide structures, during high temperature annealing or deposition, thus preventing the formation of crystalline grains that scatter and/or absorb light. Dopant atoms or molecules are used to disrupt crystallization. The dopant atoms or molecules are selected to be transparent to the optical signal's wavelength range(s). Optical signals propagating in a waveguide that is fabricated with such techniques will experience reduced propagation loss or insertion loss. The passive dopants can also be used in active devices such as lasers or optical amplifiers that incorporate optically active dopants, as long as the passive dopants are chosen so that they do not interact with the active dopants.

A method of decreasing a sheet resistance of a transparent conductor is disclosed. The method includes the following: forming a first transparent conductor layer on a substrate; dispensing a metallic nanoparticle composition on the first transparent conductor layer to form metallic nanoparticle features; and sintering at least the first transparent conductor layer and the metallic nanoparticle features. The first transparent conductor layer includes a crystalline metal oxide. The aperture ratio of the transparent conductor is in a range of 90% to 99%.

A multilayer transparent conductor and a method of forming a multilayer transparent conductor are also disclosed.

A method for depositing a large-area graphene layer and an apparatus for continuous graphene deposition using the same are disclosed. The method can include forming a titanium (Ti) layer on a substrate by sputtering, reducing the titanium layer by spraying a reductant gas containing a hydrogen gas (H.sub.2) and a purge gas onto the titanium layer while moving in a first direction in relation to the substrate and exhausting the reductant gas and the purge gas. The method can also include forming graphene by spraying a reactant gas containing a graphene source and the purge gas onto the titanium layer while moving in a second direction opposite the first direction in relation to the substrate and exhausting the reactant gas and the purge gas.

An extractive system, such as SPME, has an adsorptive phase in the form of a porous coating that has essentially vertical, mutually supporting, columnar structures with nanospaces at the boundaries of the grains.

Disclosed herein is a method of preparing a white light-emitting material. The method of preparing a white light-emitting material includes the steps of: (a) depositing a metal for the formation of a blue light-emitting material on a substrate by performing thermal evaporation; (b) forming a material in which green and blue light-emitting materials are hybridized by placing the substrate, on which the metal film is deposited in step (a), in a plasma-enhanced chemical vapor deposition (PECVD) reactor and exposing the substrate to silicon (Si) and oxygen (O) in a plasma state; and (c) forming a red light-emitting material in the material formed in step (b) by annealing the material formed in step (b) so that the red, green and blue light-emitting materials are hybridized.

The thermal barrier coating includes reactive gadolinia in its microstructures and the embedded gadolinia effectively reacts with CMAS contaminant reducing the damage from CMAS. Moreover, a method to produce a CMAS resistant thermal barrier coating can include a post-treatment to the thermal barrier coating with the reactive gadolinia suspension in sol-gel state.

Articles and methods relating to coatings having superior plasma etch-resistance and which can prolong the life of RIE components are provided. An article has a vacuum compatible substrate and a protective film overlying at least a portion of the substrate. The film comprises a fluorinated metal oxide containing yttrium.