Treatment solutions and methods for treating a substrate including forming a first layer on a surface of the substrate, providing a process gas to the one or more plasma sources, the process gas includes a gas mixture of a reactive gas species and an inert gas species; forming a plasma under vacuum in the one or more plasma sources; and exposing the substrate to the plasma under vacuum to treat the first layer on the surface of the substrate.

Disclosed are a method for producing an optical thin film having a low refractive index, a thin film forming material, an optical thin film, and an optical member. The method for producing an optical thin film includes forming a vapor deposition film by depositing a thin film forming material on an object in a non-oxidizing atmosphere by a physical vapor deposition method; and bringing the vapor deposition film into contact with a first acidic solution comprising an acidic substance in a range of pH 2.5 or more and pH 3.5 or less to obtain a first thin film having voids, wherein the thin film forming material is a mixture comprising indium oxide and silicon oxide, in which the indium oxide is in a range of 0.230 mol or more and 0.270 mol or less with respect to 1 mol of the silicon oxide.

An array of nanowires with a period smaller than 150 nm on the surface of curved transparent substrate can be used for applications such as optical polarizers. A curved hard nanomask can be used to manufacture such structures. This nanomask includes a substantially periodic array of substantially parallel elongated elements having a wavelike cross-section. The fabrication method of the nanomask uses ion beams.

The present invention addresses the problem of providing a novel SiC epitaxial substrate manufacturing method and manufacturing device therefor. An SiC substrate and an SiC material, which has a lower doping concentration than said SiC substrate, are heated facing one another, and material is transported from the SiC material to the SiC substrate to form an SiC epitaxial layer. As a result, in comparison with the existing method (chemical vapour deposition), it is possible to provide an SiC epitaxial substrate manufacturing method with a reduced number of parameters to be controlled.

The technique relates to a method for preparing a nanomesh metal membrane 5 transferable on a very wide variety of supports of different types and shapes comprising at least one step of de-alloying 1 a thin layer 6 of a metal alloy deposited on a substrate 7, said method being characterized in that said thin layer 6 has a thickness less than 100 nm, and in that said de-alloying step 1 is carried out by exposing said thin layer 6 to an acid vapor in the gas phase 8, in order to form said nanomesh metal membrane 5.

A manufacturing method of an optical element (10) of an augmented reality eyewear. At least one layer (300) of a material (200) is deposited on a waveguide (106) through perforations (204) of a plate (202) at a non-zero distance (D) from the waveguide (106). Height of the at least one layer (300) is made to vary in response to cross sectional areas of the perforations (204), which vary based on a location of the perforations (204) in the plate (202) for forming at least one diffractive grating (100, 102, 104) on the waveguide (106) from the at least one layer (300), the at least one diffractive grating (100, 102, 104) performing in-coupling and/or out-coupling of visible light between the waveguide (106) and environment.

In some embodiments, the present disclosure relates to an etching apparatus. The etching apparatus includes a substrate holder disposed within a processing chamber and having a workpiece reception surface configured to hold a workpiece. A lower surface of the processing chamber has a first region that is directly below the workpiece reception surface and that is configured to receive a byproduct from an etching process. A baffle extends outward from a sidewall of the processing chamber at a vertical position between the substrate holder and the lower surface of the processing chamber. The baffle covers a second region of the lower surface. A byproduct redistributor is configured to move the byproduct from the first region of the lower surface to the second region of the lower surface that is directly below the baffle.

Embodiments described herein relate to a method of fabricating a perovskite film device. The method includes heating and degassing a substrate within a processing system; depositing a first perovskite film layer over a surface of the substrate using multi-cathode sputtering deposition within a processing chamber; depositing a second perovskite film layer over the first perovskite film layer using multi-cathode sputtering deposition within a processing chamber; and annealing the substrate with the first perovskite film layer and second perovskite film layer disposed thereon. The first perovskite film layer includes a first perovskite material. The second perovskite film layer includes a second perovskite material.

A golf club head having a laser-generated features to create contrast on the club face of the golf club head. The club face includes a central region, a toe region, and a heel region. The central region includes a first plurality of laser-generated features that provide a height-intersection coverage of the central region, a width-intersection coverage of the central region, and a surface-area coverage of the central region. The toe region includes a second plurality of laser-generated features that provide a height-intersection coverage of the toe region, a width-intersection coverage of the toe region, and a surface-area coverage of the toe region. The heel region includes a third plurality of laser-generated features that provide a height-intersection coverage of the heel region, a width-intersection coverage of the heel region, and a surface-area coverage of the heel region.

The inventive concept provides a method for treating a surface of an object to be treated, in which a part provided and contaminated in an apparatus for treatment of a substrate such as a wafer serves as the object to be treated. In an embodiment, the surface treatment method includes forming a vacuum in an atmosphere in which the object is provided and cleaning the surface of the object by collision of first particles with contaminants on the surface of the object at supersonic speed.