Patent classifications
C23C14/5873
METHOD FOR MANUFACTURING FILM FOR DECORATION ELEMENT
The present disclosure relates to a method for manufacturing a film for a decoration element, the method including depositing two or more islands on one surface of a film; and forming a pattern portion by dry etching the film using the island as a mask.
METHOD FOR DECORATING A MECHANICAL PART
A method for decorating a surface of a mechanical part including: taking the mechanical part to be decorated, on which a decoration element is sought to be produced; depositing on the surface a masking layer having a thickness that is at least equal to the thickness of the decoration element to be produced; making, in the masking layer, at least one cavity that coincides with the location on the surface to be decorated, the cavity having a contour that corresponds to the contour of the decoration element and defining a volume; depositing a bonding layer made of an electrically-conductive material on top of the masking layer and on the surface, in the locations of the cavity, to facilitate the bonding of the decoration element; filling the volume delimited by the masking layer and the surface with a filling material in which the decoration element; and removing the masking layer.
Monolayer-By-Monolayer Growth of MgO Layers Using Mg Sublimation and Oxidation
A MgO layer is formed using a process flow wherein a Mg layer is deposited at a temperature <200° C. on a substrate, and then an anneal between 200° C. and 900° C., and preferably from 200° C. and 400° C., is performed so that a Mg vapor pressure >10.sup.−6 Torr is reached and a substantial portion of the Mg layer sublimes and leaves a Mg monolayer. After an oxidation between −223° C. and 900° C., a MgO monolayer is produced where the Mg:O ratio is exactly 1:1 thereby avoiding underoxidized or overoxidized states associated with film defects. The process flow may be repeated one or more times to yield a desired thickness and resistance×area value when the MgO is a tunnel barrier or Hk enhancing layer. Moreover, a doping element (M) may be added during Mg deposition to modify the conductivity and band structure in the resulting MgMO layer.
METHOD FOR DEPOSITING LARGE-AREA GRAPHENE LAYER AND APPARATUS FOR CONTINUOUS GRAPHENE DEPOSITION
A method for depositing a large-area graphene layer and an apparatus for continuous graphene deposition using the same are disclosed. The method can include forming a titanium (Ti) layer on a substrate by sputtering, reducing the titanium layer by spraying a reductant gas containing a hydrogen gas (H.sub.2) and a purge gas onto the titanium layer while moving in a first direction in relation to the substrate and exhausting the reductant gas and the purge gas. The method can also include forming graphene by spraying a reactant gas containing a graphene source and the purge gas onto the titanium layer while moving in a second direction opposite the first direction in relation to the substrate and exhausting the reactant gas and the purge gas.
TANTALUM PENTOXIDE BASED LOW-LOSS METASURFACE OPTICS FOR UV APPLICATIONS
High-performance optical-metasurface-based platform configured with the use of Tantalum Pentoxide to operate with extremely low levels of loss at frequencies of UV light and, in particular, in mid- and near-UV ranges and performing multiple optical-wavefront-shaping functions (among which there are high-numerical-aperture lensing, accelerating beam generation, and hologram projection). Process of fabrication of such metasurface producing near-zero levels of optical loss and employing the otherwise standard etching methodologies. Embodiments facilitate the development of low-form-factor, multifunctional ultraviolet nanophotonic platforms based on flat optical components and enabling diverse applications including lithography, imaging, spectroscopy, and quantum information processing.
Substrate having a functional coating and a temporary protection layer
An article includes a substrate including two main faces defining two main surfaces separated by edges, the substrate bearing a functional coating deposited by magnetron sputtering deposited on at least one portion of one main surface, and a temporary protective layer deposited on at least one portion of the functional coating, wherein, the temporary protective layer is deposited directly in contact with the functional coating, the temporary protective layer has a thickness of at least 1 micrometer, the temporary protective layer is not soluble in water, and the temporary protective layer is obtained from a composition comprising (meth)acrylate compounds, the substrate bearing the functional coating has not undergone a heat treatment at a temperature above 400° C.
DEVICE AND METHOD FOR REMOVING COATING MATERIAL FROM OPENINGS IN A PART
A method and device for coating a component wherein the cooling fluid ducts contained in the component have to be reopened following the coating step. The component has a first region and a second region, where the first region includes at least one cooling fluid opening having an adjoining cooling fluid channel and where the first region is to be coated with a coating material which is not to be applied in the second region.
Durable, high performance wire grid polarizer
A method for making a wire grid polarizer (WGP) can provide WGPs with high temperature resistance, robust wires, oxidation resistance, and corrosion protection. In one embodiment, the method can comprise: (a) providing an array of wires on a bottom protection layer; (b) applying a top protection layer on the wires, spanning channels between wires; then (c) applying an upper barrier-layer on the top protection layer and into the channels through permeable junctions in the top protection layer. In a variation of this embodiment, the method can further comprise applying a lower barrier-layer before applying the top protection layer. In another variation, the bottom protection layer and the top protection layer can include aluminum oxide. In another embodiment, the method can comprise applying on the WGP an amino phosphonate then a hydrophobic chemical.
PVD titanium dioxide formation using sputter etch to halt onset of crystalinity in thick films
Embodiments described herein provide methods of forming amorphous or nano-crystalline ceramic films. The methods include depositing a ceramic layer on a substrate using a physical vapor deposition (PVD) process, discontinuing the PVD process when the ceramic layer has a predetermined layer thickness, sputter etching the ceramic layer for a predetermined period of time, and repeating the depositing the ceramic layer using the PVD process, the discontinuing the PVD process, and the sputter etching the ceramic layer until a ceramic film with a predetermined film thickness is formed.
Method for long-term storage of information and storage medium therefor
The present invention relates to an information storage medium and a method for long-term storage of information comprising the steps of: providing a ceramic substrate; coating the ceramic substrate with a layer of a second material different from the material of the ceramic substrate, the layer having a thickness no greater than 10 μm; tempering the coated ceramic substrate to form a writable plate or disc; encoding information on the writable plate or disc by using a laser and/or a focused particle beam to manipulate localized areas of the writable plate or disc.