A method for providing a magnetic junction usable in a magnetic device and a magnetic junction are described. A reference layer, a crystalline MgO tunneling barrier layer and a free layer are provided. The crystalline MgO tunneling barrier layer is continuous, has a (001) orientation and has a thickness of not more than eleven Angstroms and not less than two Angstroms. The crystalline MgO tunneling barrier layer is between the free layer and the reference layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Certain exemplary embodiments can provide a system, which can comprise an ultra-thin polymer ceramic composite separator. The ultra-thin polymer ceramic composite separator can comprise Li-ion conducting ceramic material. The ceramic composite separator has a columnar grained microstructure. The ultra-thin polymer ceramic composite separator can comprise a single or bi-layer combination of LiPON, LATP, garnets, lithium sulfides, or Li.sub.1+2xZr.sub.2−zCa(PO.sub.4).sub.3.

A composite article includes an inorganic non-metallic article, a resin article, and a connecting layer located between the inorganic non-metallic article and the resin article. The connecting layer is configured to connect the inorganic non-metallic article and the resin article together. A surface of the connecting layer connected with the resin article includes a plurality of microstructures, a portion of the resin article fills in the plurality of microstructures. A method for making the composite article is also provided.

A method for fabricating a near-field transducer (NFT) for a heat assisted magnetic recording (HAMR) write apparatus is described. The HAMR write apparatus is coupled with a laser for providing energy and has a media-facing surface (MFS) configured to reside in proximity to a media during use. The method includes providing a stack on an underlayer. The stack includes an endpoint detection layer, an optical layer and an etchable layer. The optical layer is between the etchable and endpoint detection layers. The etchable layer is patterned to form a mask. A portion of the optical layer is removed. A remaining portion of the optical layer has a bevel at a bevel angle from the MFS location. The bevel angle is nonzero and acute. The NFT is provided such that the NFT has an NFT front surface adjoining the bevel and at the bevel angle from the MFS location.

A manufacturing method for a head slider coated with Diamond-like Carbon (DLC) includes: providing a substrate that is to be finally made into a head slider; depositing a DLC layer on a surface of the substrate, with carbon plasma source being sputtered in a direction that is vertical to the surface of the substrate; and doping a fluorine-doping (F-doping) layer on the DLC layer. Whereby the head slider has good film adhesion performance, higher hardness, better wear resistance, lower surface energy to obtain good hydrophobicity and oleophobicity, and lower fly height in HDD.

The invention includes miniature dots, miniature disks or miniature cylinders and methods of making the same by dispersing a particle in or on a dissolvable, meltable or etchable layer on a substrate, a portion of the particle exposed above a surface of the dissolvable, meltable or etchable layer; depositing a mask on the particles and the dissolvable substrate; removing the particles from the layer; etching an array of nanoholes in the substrate; depositing one or more metallic layers into the nanoholes to form an array of dots, disks or cylinders; and dissolving the dissolvable layer with a solvent to expose the dots, disks or cylinders. The dots, disks or cylinders can be included with two sets of microelectrodes for ultrahigh speed rotation of miniature motors, and/or can be designed with a magnetic configuration into miniature motors for uniform rotation speeds and prescribed angular displacement. The invention also includes modified diatom frustules, and miniature motors containing modified diatom frustules.

The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.

A method of manufacture of an extreme ultraviolet reflective element includes: providing a substrate; forming a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer and a second reflective layer for forming a Bragg reflector; and forming a capping layer on and over the multilayer stack, the capping layer formed from titanium oxide, ruthenium oxide, niobium oxide, ruthenium tungsten, ruthenium molybdenum, or ruthenium niobium, and the capping layer for protecting the multilayer stack by reducing oxidation and mechanical erosion.

Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

The present application discloses a manufacturing method for a gate electrode and a thin film transistor, and a display panel, including: depositing an aluminum film on a substratum by physical vapor deposition; depositing a molybdenum film over the aluminum film by atomic layer deposition; and etching the aluminum film and the molybdenum film to form the gate electrode of a predetermined pattern.