The present invention relates to an aluminum-magnesium coated steel plate using vacuum coating, wherein an aluminum-magnesium coating layer is constituted by 1 to 45 wt % of magnesium, a balance of aluminum, and other inevitable impurities, and an Al.sub.3Mg.sub.2 alloy phase is formed in the aluminum-magnesium coating layer by performing heat treatment of the steel plate.

An antireflection film is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer in this order from the substrate, an anchor region including an oxide of an anchor metal is provided between the silver-containing metal layer and the interlayer, a cap region including an oxide of the anchor metal included in the anchor region is provided between the silver-containing metal layer and the dielectric layer, a crystal grain size obtained by X-ray diffraction measurement in the silver-containing metal layer is less than 6.8 nm, and the anchor metal has a surface energy less than a surface energy of silver and greater than a surface energy of a layer of the interlayer closest to the silver-containing metal layer.

A piston ring is provided with is furnished with a diamond-like carbon (DLC) layer as a functional/wear protection layer, wherein the DLC layer is covered with a protective layer, the material of which differs from that of the DLC layer, and the material of which has higher thermal resistance that the material of the DLC layer. In addition, a method is provided for producing a piston ring with a DLC wear protection layer, in whose surface the protective layer is present in the form of deposits in depressions created by the surface roughness.

A ZnMg alloy plated steel material having excellent adhesion to plating and corrosion resistance comprises base steel and a plating layer formed on the surface of the base steel, wherein the plating layer comprises a Zn single phase, a Mg single phase, an MgZn.sub.2 alloy phase, and an Mg.sub.2Zn.sub.11 alloy phase, the Zn single phase is contained in the plating layer at a proportion of 15 to 19 volumes, and the proportion of the Zn single phase in a lower t/2 area of the plating layer adjacent to the base steel may be greater than the proportion of the Zn single phase in an upper t/2 area of the plating layer on the surface layer side of the plating layer. (Here, t means the thickness (?m) of the plating layer).

A method of forming a Pb-free perovskite film is provided, the method based on vacuum evaporation and comprising: first depositing a first material comprising Sn halide on a substrate to form a first layer; second depositing a second material comprising organic halide to form a second layer on the first layer to obtain a sequentially-deposited two-layer film on the substrate; and annealing the sequentially-deposited two-layer film on the substrate. During the annealing, the first and second materials inter-diffuse and react to form the Pb-free perovskite film. The second layer is formed to cover the first layer so as to prevent the first layer from air exposure. The solar cell device including the Pb-free perovskite film formed by using the present method exhibits good stability.

Provided is a method of manufacturing a ZnMg alloy plated steel having excellent plating adhesion and corrosion resistance. The method includes: sequentially forming a first Zn plating layer, a second Mg plating layer, and a third Zn plating layer on base steel by a physical vapor deposition (PVD) method to provide a plated steel material; heating the plated steel material for alloying heat treatment to provide an alloy plated steel material; and cooling the alloy plated steel material. In the providing of the plated steel material, the second Mg plating layer has a thickness of 30% to 35% of the sum of thicknesses of the first Zn plating layer, the second Mg plating layer, and the third Zn plating layer, and the first Zn plating layer has a thickness of 1.1 to 4 times a thickness of the third Zn plating layer.

The present invention relates to an aluminum-magnesium coated steel plate using vacuum coating, wherein an aluminum-magnesium coating layer is constituted by 1 to 45 wt % of magnesium, a balance of aluminum, and other inevitable impurities, and an Al.sub.3Mg.sub.2 alloy phase is formed in the aluminum-magnesium coating layer by performing heat treatment of the steel plate.

The present invention relates to an aluminum-magnesium coated steel plate using vacuum coating, wherein an aluminum-magnesium coating layer is constituted by 1 to 45 wt % of magnesium, a balance of aluminum, and other inevitable impurities, and an Al.sub.3Mg.sub.2 alloy phase is formed in the aluminum-magnesium coating layer by performing heat treatment of the steel plate.

On at least one surface of a base metal plate (1) of an - transforming Fe or Fe alloy, a metal layer (2) containing ferrite former is formed. Next, the base metal plate (1) and the metal layer (2) are heated to an A3 point of the Fe or the Fe alloy, whereby the ferrite former are diffused into the base metal plate (1) to form an alloy region (1b) in a ferrite phase in which an accumulation degree of {200} planes is 25% or more and an accumulation degree of {222} planes is 40% or less. Next, the base metal plate (1) is heated to a temperature higher than the A3 point of the Fe or the Fe alloy, whereby the accumulation degree of the {200} planes is increased and the accumulation degree of the {222} planes is decreased while the alloy region (11b) is maintained in the ferrite phase.

The present invention provides a process for producing a layer of a crystalline material comprising a perovskite or a hexahalometallate, which process comprises: (i) exposing a substrate to a vapour comprising a first precursor compound in a first chamber to produce a layer of the first precursor compound on the substrate; and (ii) exposing the layer of the first precursor compound to a vapour comprising a second precursor compound in a second chamber to produce the layer of a crystalline material, wherein the pressure in the second chamber is above high vacuum. The invention also provides a process for producing a layer of a crystalline material comprising a perovskite or a hexahalometallate, which process comprises exposing a layer of a first precursor compound on a substrate to a vapour comprising a second precursor compound in a chamber to produce the layer of a crystalline material, wherein the pressure in the chamber is greater than high vacuum and less than atmospheric pressure. The invention also provides a process for producing a semiconductor device comprising a layer of a crystalline material, which process comprises producing said layer of a crystalline material by a process as according to the invention.