A vapor deposition process is provided for the growth of as-deposited hydrogen-free silicon carbide (SiC) and SiC films including oxygen (SiC:O) thin films. For producing the SiC thin films, the process includes providing a silahydrocarbon precursor, such as TSCH (1,3,5-trisilacyclohexane), in the vapor phase, with or without a diluent gas, to a reaction zone containing a heated substrate, such that adsorption and decomposition of the precursor occurs to form stoichiometric, hydrogen-free, silicon carbide (SiC) in a 1:1 atom ratio between silicon and carbon on the substrate surface without exposure to any other reactive chemical species or co-reactants. For the SiC:O films, an oxygen source is added to the reaction zone to dope the SiC films with oxygen. In the silahydrocarbon precursors, every carbon atom is bonded to two silicon atoms, with each silicon atom being additionally bonded to two or more hydrogen atoms.

A method for preparing a silicon monoxide composite material includes: a first stage: introducing a protective gas into a vapor deposition oven, and pre-heating a silicon monoxide raw material, such that a part of the silicon monoxide raw material is subjected to a disproportionation reaction; a second stage: continuously introducing the protective gas and introducing a carbon source gas, and subjecting the pre-heated silicon monoxide raw material to a chemical vapor deposition to form carbon nanotubes on a surface of silicon monoxide; and a third stage: after a predetermined time period, stopping introducing the carbon source gas, and stopping introducing the protective gas until the vapor deposition oven is cooled to room temperature, to prepare the silicon monoxide composite material. During the preparation process, no extra catalyst needs to be added, a product of the previous disproportionation reaction may act as a catalyst for the growth of the carbon nanotubes.

An epitaxial nitride semiconductor is formed over a buffer layer and over a silicon single crystal substrate. A misfit dislocation layer in the silicon single crystal substrate mitigates distortion due to lattice mismatch generated during epitaxial growth of the nitride semiconductor and thermal distortion due to difference in the thermal expansion coefficient occurring during the cooling process after epitaxial growth of the nitride semiconductor. The resulting nitride semiconductor substrate has excellent crystallinity without the occurrence of cracks or large warpage.

A coating system for coating an interior surface of a housing comprising: first and second closures engaging first and second ends, respectively, of the housing to provide an enclosed volume; first and second flow lines coupled to the first and second closures, respectively, the first flow line and/or the second flow line connected to an inert gas source; a reactant gas source(s) comprising a reactant gas and coupled to the first and/or second flow line; and a controller in electronic communication with the reactant gas and inert gas sources, and configured to control flow of inert gas into the enclosed volume, and counter current injection of reactant gas from the reactant gas source(s) into the enclosed volume whereby introduction of pulse(s) of the reactant gas into the enclosed volume are separated by introduction of inert gas into the enclosed volume, and coating layer(s) are deposited on the interior surface.

A coating system for coating, with a surface coating process, an interior surface of a housing defining an interior volume, having: a first closure and a second closure to sealingly engage with the housing; one or more first flow lines and second flow lines fluidically coupled to the first and second closure, respectively; a pressurized cell comprising a pressurized gas comprising at least one reactant and at a pressure of greater than a pressure within the housing, wherein the pressurized cell is fluidically coupled to a pressurized cell line comprising one of the first flow lines or second flow lines; and a controller in electronic communication with the pressurized cell and configured to control injection of a pulse of the pressurized gas into a flow of inert gas in the pressurized cell line, whereby the pulse is introduced into the interior volume, coating the interior surface with a coating layer.

In one embodiment, a method of selectively forming a deposit may include

providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.

A method of depositing tungsten over a substrate includes disposing the substrate into a vacuum enclosure of a tungsten deposition apparatus, performing a first tungsten deposition process that deposits a first tungsten layer over a physically exposed surface of the substrate by flowing a fluorine-containing tungsten precursor gas into the vacuum enclosure, performing an in-situ oxidation process by exposing the first tungsten layer to an oxidation agent gas while the substrate remains within the vacuum enclosure without breaking vacuum and forming a tungsten oxyfluoride gas which is pumped out of the vacuum enclosure, and performing a second tungsten deposition process that deposits a second tungsten layer on the first tungsten layer by flowing the fluorine-containing tungsten precursor gas into the vacuum enclosure in a second tungsten deposition process after the in-situ oxidation process.

A CVD reactor, including a deposition chamber housing a first susceptor and a second susceptor, the first susceptor having a cavity for receiving a first substrate, the first substrate having a front surface and a back surface, the second susceptor having a cavity for receiving a second substrate, the second substrate having a front surface and a back surface, and the first susceptor and the second susceptor are disposed so that the front surface of the first substrate is opposite to the front surface of the second substrate thereby forming a portion of a gas flow channel.

A substrate processing apparatus that places a substrate on a placing portion and performs a heating processing on the substrate includes a plurality of heating control regions that are set plurally along a circumferential direction of the placing portion to heat the substrate placed on the placing portion, and are independently controlled in temperature, and an adjusting unit that adjusts a relative direction of a circumferential direction of the substrate with respect to an arrangement of the circumferential direction of the plurality of heating control regions based on information on deformation of the substrate different in height from a plane orthogonal to a center axis of the substrate in the circumferential direction.

A deposition method includes depositing on a surface of a substrate a stack by an ALD (atomic layer deposition). Also provided is an ALD reactor for carrying out the method and products obtained using the deposition method.