Apparatuses and methods for depositing materials on both sides of a web while it passes a substantially vertical direction are provided. In particular embodiments, a web does not contact any hardware components during the deposition. A web may be supported before and after the deposition chamber but not inside the deposition chamber. At such support points, the web may be exposed to different conditions (e.g., temperature) than during the deposition. Also provided are substrates having materials deposited on both sides that may be fabricated by the methods and apparatuses.

Disclosed are a method for preheating a substrate treating apparatus capable of shortening a preheating time and simultaneously performing a maintenance operation, and a computer program for the same. The method includes setting a parameter related to preheating of a preheating target component among components constituting the substrate treating apparatus; and preheating the preheating target component based on the set parameter, wherein a movement range of the preheating target component is limited to a value within a movable range.

The system and method includes the suspension of a free-standing carbon article within a reaction chamber, the introduction of the chemical precursor in a reaction environment within the chamber, and heating of the carbon article in the presence of the chemical precursor leading to deposition in a site-specific manner.

A film deposition method and a film deposition apparatus are provided. The film deposition method includes: putting a substrate into a furnace tube, the furnace tube including a first section for placing the substrate, the first section having an inlet for reaction gas; heating, within a first preset time, a first heating module from a first initial temperature to a first preset temperature, the first heating module surrounding the first section and being configured to heat the first section; maintaining, within a second preset time, the first heating module continuously at the first preset temperature; and within a third preset time, introducing the reaction gas into the furnace tube from the inlet, and heating the first heating module from the first preset temperature to a second preset temperature so as to form a target film on a surface of the substrate placed in the first section.

The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.

Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

A method for selectively depositing an amorphous silicon film on a substrate comprising a metallic nitride surface and a metallic oxide surface is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, contacting the substrate with silicon iodide precursor, and selectively depositing the amorphous silicon film on the metallic nitride surface relative to the metallic oxide surface. Semiconductor device structures including an amorphous silicon film deposited by selective deposition methods are also disclosed.

A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.

A substrate processing apparatus includes: configured to support a plurality of substrates; a chamber sidewall surrounding at least a side surface of the substrate support; and an upper plate including a plurality of plate portions on the substrate support and spaced apart from the substrate support. The plurality of plate portions and the substrate support collectively at least partially define a plurality of process regions between the plurality of plate portions and the substrate support and a separation between at least two process regions of the plurality of process regions. The plurality of process regions include a pretreatment process region between the pretreatment process plate portion and the substrate support and having a first height, and a deposition process region between the deposition process plate portion and the substrate support and having a second height, greater than the first height.

In a gas-barrier aluminum deposition film according to one embodiment of the present invention, a seed coating layer containing functional groups of at least one type selected from among a hydroxyl group (—OH), an amine group (—NH), and a carboxylic acid group (—COOH) is formed on a thermoplastic plastic base film to form a seed molecular layer that enables uniform deposition of aluminum, such as AlOx or AlNx, through chemical reaction, on a surface of the coating layer, with aluminum atoms vaporized at the initial stage of aluminum deposition, thereby inducing uniform deposition of an aluminum layer to be subsequently deposited. Therefore, it is possible to provide a deposited film having superior oxygen and water vapor barrier properties compared to existing aluminum deposition films.