A heating apparatus including a side wall heat insulator configured to provide an inner space for receiving a reaction tube, an upper wall heat insulator covering a top portion of the side wall heat insulator, a heat generation part in an inner surface of the side wall heat insulator, and a heat compensating part on a lower surface of the upper wall heat insulator, the heat compensating part including a reflection surface in a first region on the lower surface of the upper wall heat insulator, the first region having a first emissivity less than an emissivity of the upper wall heat insulator may be provided.

In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.

Methods of forming carbon nanotubes and structures and devices including carbon nanotubes are disclosed. Methods of forming the carbon nanotubes include patterning a surface of a substrate with polymeric material, removing portions of the polymeric material to form exposed substrate surface sections, and forming the carbon nanotubes on the exposed substrate sections.

The present invention provides a method for manufacturing graphene, said graphene, and an apparatus for manufacturing same. The method for manufacturing graphene comprises the steps of: loading a catalytic metal layer into a chamber; applying tensile force to the catalytic metal layer; and forming graphene on the catalytic metal layer by supplying a carbon source into the chamber while the tension is applied to the catalytic metal layer. Therefore, the size of the grains on the catalytic metal layer can be increased by applying tension to the catalytic metal layer, and high quality uniform graphene can be grown through the use of the catalytic metal layer.

A continuous method for preparing a metal substrate having a graphene-comprising coating, the method including providing a metal substrate, continuously advancing the metal substrate into and through a processing chamber, the processing chamber having one or more heating elements, providing electromagnetic radiation to the metal substrate via the one or more heating elements to heat the metal substrate, wherein heating the metal substrates forms a molten metal layer on a top surface of the metal substrate, contacting the molten metal layer with a carbon source gas to form a graphene-comprising coating substantially covering the molten metal layer of the top surface of the metal substrate, solidifying the molten metal layer, and advancing the metal substrate having the graphene-comprising coating out of the processing chamber.

An ink for forming a photothermal conversion layer used to cause at least a portion of a thermal expansion layer of a thermal expansion sheet to swell. The ink includes an inorganic infrared absorbing agent having a higher absorptivity in at least one region of the infrared light spectrum than in the visible light spectrum.

The present disclosure relates to a laminated body including at least a base material layer containing at least a flexible base material and an inorganic thin film layer, in which a distribution curve of I.sub.O2/I.sub.Si has at least one maximum value (I.sub.O2/I.sub.Si).sub.maxBD in a region BD between a depth B and a depth D, where ionic strengths of Si.sup.−, C.sup.−, and O.sub.2.sup.− are each denoted as I.sub.Si, I.sub.C, and I.sub.O2 in a depth profile measured from a surface of the laminated body on an inorganic thin film layer side in a thickness direction using a time-of-flight secondary ion mass spectrometer (TOF-SIMS), an average ionic strength in a region A1 in which an absolute value of a coefficient of variation of an ionic strength value on a base material layer side is within 5% is denoted as I.sub.CA1, a depth that is closest to the region A1 on a surface side of the inorganic thin film layer with respect to the region A1 and exhibits an ionic strength to be 0.5 times or less the I.sub.CA1 is denoted as A2, and a depth that is closest to A2 on a surface side of the inorganic thin film layer with respect to A2 and exhibits a minimum value is denoted as A3 in an ionic strength curve of C.sup.−, and a depth that is closest to A3 on a surface side of the inorganic thin film layer with respect to A3 and has a differential value of 0 or more is denoted as B, a depth that is closest to A3 on a base material layer side with respect to A3 and exhibits a maximum value d(I.sub.C).sub.max of differential distribution value is denoted as C, and a depth that is closest to C on a base material layer side with respect to C and has an absolute value of differential value to be 0.01 times or less the d(I.sub.C).sub.max is denoted as D in a first-order differential curve of ionic strength of C.sup.−.

A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 600° C. or greater are provided. In one aspect, there is provided a method to deposit a silicon oxide film or material on a substrate in a reactor at one or more temperatures ranging from about 600° C. to 1000° C.; comprising the steps of: introducing into the reactor at least one halidocarbosilane precursor selected from the group of compounds having Formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen-containing source into the reactor; and purging the reactor with a purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited.

A masking block configured to contact a growth substrate to define a pattern of a two-dimensional material directly synthesized on the growth substrate, includes a base substrate; a gamma-alumina film that is disposed on the base substrate and that has an upper surface in which a (110) plane is dominant as being more than 50%; and a hexagonal boron nitride film that is doped with carbon and oxygen that is disposed on the gamma-alumina film, and that has reduced defects due to properties of the gamma-alumina film, wherein the hexagonal boron nitride film contains an amount of carbon ranging from 1 at % to 15 at % based on total atoms of carbon, oxygen, nitrogen and boron in the hexagonal boron nitride film and includes voids such that a coverage ratio of the hexagonal boron nitride film on the gamma-alumina film is less than 1 and equal to or more than 0.9.

The invention relates to a method for coating a mechanically highly loaded surface (2) of a component (1) consisting of a hardened steel with a nitrogen and/or carbon component with an adherent or functional coating (4) for surface treatment, wherein a metallic binding material (5) is introduced into the surface (2) prior to the application of the adherent or functional coating (4) to create a graduated diffusion barrier zone (3) conforming to the surface with a proportion of metal nitride and/or metal carbide increasing towards the surface (2).