A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (ν.sub.A−ν.sub.B)/ν.sub.B is within the range of ±0.1%, wherein ν.sub.A is a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and ν.sub.B is an average value of peak wave numbers of micro-Raman spectra in the outer region.

Disclosed are apparatuses and methods for providing a substrate onto a substrate support in a processing chamber, generating an inert plasma in the processing chamber, and maintaining the inert plasma to heat the substrate to a steady state temperature, suitable for conducting plasma-enhanced chemical vapor deposition (PECVD), in less than 30 seconds from providing the substrate onto the substrate support. An apparatus may include a processing chamber, a process station that includes a substrate support, a process gas unit configured to flow an inert gas onto a substrate supported by the substrate support, a plasma source configured to generate an inert plasma in the process station, and a controller with instructions configured to flow the inert gas onto the substrate, generate the inert plasma in the first process station, and maintain the inert plasma to thereby heat the substrate.

The present invention relates to a device for coating containers with a barrier layer having at least one plasma chamber, which encloses at least one treatment space, in which at least one container with a container interior can be inserted and can be positioned on the treatment space, wherein a gas lance is provided which can be introduced into the container interior and which further acts as microwave antenna, with the plasma chamber being designed to be capable at least of partial evacuation and being designed to fill the container interior at least partially with a plasma and a process gas. The device is designed such that the container can be preheated by means of a plasma, more particularly by means of a microwave plasma, using a noble gas which can be introduced into the container interior through the gas lance.

Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

A method for reducing metal contamination performed after dry cleaning of a process chamber used for a film deposition process and before starting the film deposition process is provided. In the method, a temperature in the process chamber is changed from a first temperature during the dry cleaning to a film deposition temperature. Hydrogen and oxygen are activated in the vacuum chamber while supplying hydrogen and oxygen into the process chamber. An inside of the process chamber is coated by performing the film deposition process without a substrate in the process chamber after the step of activating hydrogen and oxygen.

A coating system for coating, with a surface coating process, an interior surface of a housing defining an interior volume, having: a first closure and a second closure to sealingly engage with the housing; one or more first flow lines and second flow lines fluidically coupled to the first and second closure, respectively; a pressurized cell comprising a pressurized gas comprising at least one reactant and at a pressure of greater than a pressure within the housing, wherein the pressurized cell is fluidically coupled to a pressurized cell line comprising one of the first flow lines or second flow lines; and a controller in electronic communication with the pressurized cell and configured to control injection of a pulse of the pressurized gas into a flow of inert gas in the pressurized cell line, whereby the pulse is introduced into the interior volume, coating the interior surface with a coating layer.

A coating system for coating an interior surface of a housing comprising: first and second closures engaging first and second ends, respectively, of the housing to provide an enclosed volume; first and second flow lines coupled to the first and second closures, respectively, the first flow line and/or the second flow line connected to an inert gas source; a reactant gas source(s) comprising a reactant gas and coupled to the first and/or second flow line; and a controller in electronic communication with the reactant gas and inert gas sources, and configured to control flow of inert gas into the enclosed volume, and counter current injection of reactant gas from the reactant gas source(s) into the enclosed volume whereby introduction of pulse(s) of the reactant gas into the enclosed volume are separated by introduction of inert gas into the enclosed volume, and coating layer(s) are deposited on the interior surface.

Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

Systems and method for producing graphene on a substrate are described. Certain types of exemplar systems include lateral arrangements of a substrate gas scavenging environment and an annealing environment. Certain other types of exemplar systems include lateral arrangements of a graphene producing environment and a cooling environment, which cools the graphene produced on the substrate. Yet other types of exemplar systems include lateral arrangements of a localized annealing environment, localized graphene producing environment and a localized cooling environment inside the same enclosure. Certain type of exemplar methods for producing graphene on a substrate include scavenging a first portion of the substrate and preferably, contemporaneously annealing a second portion of the substrate. Certain other type of exemplar methods for producing graphene include novel annealing techniques and/or implementing temperature profiles and gas flow rate profiles that vary as a function of lateral distance and/or cooling graphene after producing it.

An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.