A method for fabricating a composite film structure, the method includes determining a desired morphology for a metallic layer of the composite film structure, selecting a first metal substrate based on the determining, transferring a graphene layer onto the first metal substrate, depositing the metallic layer on the graphene layer to achieve the desired morphology, and removing the first metal substrate from the graphene and the deposited metallic layer to form the composite film structure. A surface energy difference between the first metal substrate and the deposited metallic layer results in the desired morphology of the metallic layer.

A coated article is disclosed. The article includes a coating formed by thermal decomposition, oxidation then functionalization. The article is configured for a marine environment, the marine environment including fouling features. The coating is resistant to the fouling features. Additionally or alternatively, the article is a medical device configured for a protein-containing environment, the protein-containing environment including protein adsorption features. The coating is resistant to the protein adsorption features.

An ALE system for performing a metal ALE process to etch a surface of a substrate includes a processing chamber, a substrate support, a heat source, a delivery system, and a controller. The substrate support is disposed in the processing chamber and supports the substrate. The delivery system supplies a ligand or organic species to the processing chamber. The controller controls the delivery system and the heat source to perform an isotropic metal ALE process that includes: during an iteration of the isotropic metal ALE process, performing atomistic adsorption and pulsed thermal annealing; during the atomistic adsorption, exposing the surface to the ligand or organic species, where the ligand or organic species is void of a metal precursor and is selectively adsorbed to form a metal complex in the surface; and during the pulsed thermal annealing, pulsing the heat source multiple times to remove the metal complex from the substrate.

The present disclosure relates to a method for chemical vapour deposition on a substrate, the method comprising a precursor step and a reactant step, wherein the precursor step comprises chemisorbing a layer of precursor molecules on the substrate (170), and wherein the reactant step comprises adding to at least part of the substrate (170) surface species able to reduce the precursor molecule, whereby at least a part of the reduced precursor molecule is deposited on the substrate (170) surface, characterized by applying by means of a voltage source (130) a positive bias to at least part of the substrate (170) surface during at least part of the reactant step, wherein the step of adding the reducing species comprises providing by means of an electron source (150) electrons as free particles, whereby during the reactant step a closed electrical circuit is formed as the free electrons are transmitted to the substrate (170) surface.

Methods for selectively depositing germanium containing films are disclosed. Some embodiments of the disclosure provide deposition on a bare silicon with little to no deposition on a silicon oxide surface. Some embodiments of the disclosure provide conformal films on trench sidewalls. Some embodiments of the disclosure provide superior gap fill without seams or voids.

A plasma purge method that is performed after dry cleaning in a process container and before applying a deposition process to a substrate includes: (a) activating and supplying a first process gas containing Cl.sub.2 in the process container; and (b) activating and supplying a second process gas containing H.sub.2 and O.sub.2 in the process container.

Methods for selective deposition are described herein. Further, methods for improving selectivity comprising an ammonia plasma pre-clean process are also described. In some embodiments, a silyl amine is used to selectively form a surfactant layer on a dielectric surface. A ruthenium film may then be selectively deposited on a conductive surface. In some embodiments, the ammonia plasma removes oxide contaminations from conductive surfaces without adversely affecting the dielectric surface.

Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

An object of the invention is to provide a coated cutting tool whose tool life can be extended by having excellent wear resistance and fracture resistance. The coated cutting tool includes: a substrate; and a coating layer formed on a surface of the substrate, in which the coating layer includes a lower layer, an intermediate layer, and an upper layer in this order from a substrate side to a surface side of the coating layer, the lower layer includes one or more Ti compound layers formed of a specific Ti compound, the intermediate layer contains TiCNO, TiCO, or TiAlCNO, the upper layer contains α-type Al.sub.2O.sub.3, an average thickness of the lower layer is 2.0 μm or more and 8.0 μm or less, an average thickness of the intermediate layer is 0.5 μm or more and 2.0 μm or less and is 10% or more and 20% or less of an average thickness of the entire coating layer, an average thickness of the upper layer is 0.8 μm or more and 6.0 μm or less, and in the intermediate layer, a ratio of a length of CSL grain boundaries and a ratio of a length of Σ3 grain boundaries are in specific ranges.

A substrate for a display article is described herein that includes (a) a primary surface; and (b) a textured region on at least a portion of the primary surface; the textured region comprising: (i) primary surface features, each comprising a perimeter parallel to a base-plane extending through the substrate disposed below the textured region, wherein the perimeter of each of the primary surface features comprises a longest dimension of at least 5 μm; and (ii) one or more sections each comprising secondary surface features having a surface roughness (R.sub.a) within a range of 5 nm to 100 nm. In some instances, an arrangement of the surface features reflect a random distribution. A method of forming the same is disclosed.