Fabricating a nanopore sensor includes depositing a first and second oxide layers on first and second sides of a sapphire substrate. The second oxide layer is patterned to form an etch mask having a mask opening in the second oxide layer. A crystalline orientation dependent wet anisotropic etch is performed on the second side of the sapphire substrate using the etch mask to form a cavity having sloped side walls through the sapphire substrate to yield an exposed portion of the first oxide layer, each of the sloped side walls being a crystalline facet aligned with a respective crystalline plane of the sapphire substrate. A silicon nitride layer is deposited on the first oxide layer. The exposed portion of the first oxide layer in the cavity is removed, thereby defining a silicon nitride membrane in the cavity. An opening is formed through the silicon nitride membrane.

A film forming apparatus embeds ruthenium in a substrate having a recess. The film forming apparatus includes: a processing container; a gas supplier configured to supply gas; and a gas exhauster configured to exhaust gas, wherein the gas supplier includes a first supply line configured to supply a ruthenium raw-material gas into the processing container and a second supply line configured to supply a gas containing ozone gas into the processing container, and wherein the gas exhauster includes a first exhaust line including a first exhaust apparatus and configured to exhaust a gas containing a ruthenium raw-material gas from an interior of the processing container by using the first exhaust apparatus, and a second exhaust line including a second exhaust apparatus different from the first exhaust apparatus and configured to exhaust the gas containing ozone gas by using the second exhaust apparatus.

In a method for semiconductor processing, a semiconductor substrate is provided. The semiconductor substrate defines at least one first trench therein. The at least one first trench has a first depth (d.sub.1). A coating layer is deposited onto the semiconductor substrate using at least one precursor under a setting for a processing temperature (T). The coating layer defines at least one second trench having a second depth (d.sub.2) above the at least one first trench. A first depth parameter (t) of the second depth (d.sub.2) relative to the first depth (d.sub.1) is determined. The processing temperature (T) is then determined based on the first depth parameter (t).

Methods and devices for forming a conductive line disposed over a substrate. A first dielectric layer is disposed over the substrate and coplanar with the conductive line. A second dielectric layer disposed over the conductive line and a third dielectric layer disposed over the first dielectric layer. A via extends through the second dielectric layer and is coupled to the conductive line. The second dielectric layer and the third dielectric layer are coplanar and the second and third dielectric layers have a different composition. In some embodiments, the second dielectric layer is selectively deposited on the conductive line.

A method includes flowing first precursors over a semiconductor substrate to form an epitaxial region, the epitaxial region includes a first element and a second element; converting a second precursor into first radicals and first ions; separating the first radicals from the first ions; and flowing the first radicals over the epitaxial region to remove at least some of the second element from the epitaxial region.

A method for coating a metal workpiece with graphene includes exposing the metal workpiece to a carbon-containing precursor gas and a hydrogen gas in a processing chamber in a first phase, and to the carbon-containing precursor gas, the hydrogen gas and a first carrier gas in the processing chamber in a second phase after the first phase. A first flow rate of the carbon-containing precursor gas into the processing chamber is higher than a second flow rate of the carbon-containing precursor gas into the processing chamber, and a first flow rate of the hydrogen gas into the processing chamber is higher than a second flow rate of the hydrogen gas into the processing chamber. A first total gas pressure in the processing chamber in the first phase is lower than a second total gas pressure in the processing chamber in the second phase.

A process for forming cobalt on a substrate, comprising: volatilizing a cobalt precursor of the disclosure, to form, a precursor vapor: and contacting the precursor vapor with the substrate under vapor deposition conditions effective for depositing cobalt on the substrate from the precursor vapor, wherein the vapor deposition conditions include temperature not exceeding 200° C., wherein: the substrate includes copper surface and dielectric material, e.g., ultra-low dielectric material. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms a capping layer, encapsulating layer, electrode, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel, display, or solar panel. A cleaning composition containing base and oxidizing agent components may be employed to clean the copper prior to deposition of cobalt thereon, to achieve substantially reduced defects in the deposited cobalt.

Methods of making hexagonal boron nitride coatings upon stainless steel and other ferrous metal/alloy materials, compositions thereof, and methods of using same, such as in electrothermal membrane distillation systems using hexagonal boron nitride coated metal mesh.

The invention discloses equipment and preparation method for open and continuous growth of a carbon nanomaterial. The equipment comprises a metal foil tape feeding system, a CVD system and a collection system. The method includes continuously conveying a metal foil tape pretreated or not into the CVD system via the metal foil tape feeding system, depositing a required carbon nanomaterial on the surface of the metal foil tape by CVD, directly collecting by the collection system or directly post-treating the carbon nanomaterial by a post-treatment system, and even directly producing a end product of the carbon nanomaterial. All the systems in the invention are arranged in the open atmosphere rather than an air-isolated closed space. The invention can realize round-the-clock continuous operation to greatly improve the production efficiency of carbon nanomaterials.

A method for creating a flat optical structure is disclosed, having steps of providing a substrate, etching at least one nanotrench in the substrate, placing a dielectric material in the at least one nanotrench in the substrate and encapsulating a top of the substrate with a film.