The present invention is in the field of processes for producing flexible organic-inorganic laminates as well as barrier films comprising flexible organic-inorganic laminates by atomic layer deposition. In particular the present invention relates to a process for producing a laminate comprising more than once the sequence comprising: (a) depositing an inorganic layer by performing 4 to 150 cycles of an atomic layer deposition process, and (b) depositing an organic layer comprising sulfur by a molecular layer deposition process.

Described herein is a method of depositing a plasma resistant ceramic coating onto a surface of a chamber component using a non-line-of-sight (NLOS) deposition process, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD). The plasma resistant ceramic coating consists of an erbium containing oxide, an erbium containing oxy-fluoride, or an erbium containing fluoride. Also described are chamber components having a plasma resistant ceramic coating of an erbium containing oxide, an erbium containing oxy-fluoride, or an erbium containing fluoride.

A method for manufacturing monocrystalline graphene, includes supplying an aromatic carbon gas onto a single-crystalline metal catalyst to manufacture the monocrystalline graphene.

There is provided a method of manufacturing a semiconductor device, which includes: forming a silicon film inside a recess formed in a surface of a workpiece by supplying a film forming gas containing silicon to the workpiece; subsequently, supplying a process gas, which includes a halogen gas for etching the silicon film and a roughness suppressing gas for suppressing roughening of a surface of the silicon film after being etched by the halogen gas, to the workpiece; etching the silicon film formed on a side wall of the recess to enlarge an opening width of the recess by applying thermal energy to the process gas and activating the process gas; and subsequently, filling silicon into the recess by supplying the film forming gas to the workpiece and depositing silicon on the silicon film remaining in the recess.

A high-specific surface area and super-hydrophilic gradient boron-doped diamond electrode is disclosed. The electrode directly uses a substrate as an electrode matrix; or a transition layer is disposed on a surface of the substrate and used as the electrode matrix. A gradient boron-doped diamond layer is disposed on a surface of the electrode matrix, and a contact angle of the electrode is θ<40°. The gradient boron-doped diamond layer includes: a gradient boron-doped diamond bottom layer, a gradient boron-doped diamond middle layer, and a gradient boron-doped diamond top layer, a boron content of which gradually increases, so the gradient boron-doped diamond layer has high adhesion, high corrosion resistance, and high catalytic activity. The high-content boron of the top layer is combined with a one-time high-temperature treatment, so the gradient boron-doped diamond electrode has a high-specific surface area and superhydrophilicity, which may greatly improve the mineralization and degradation efficiency of the electrode.

A method of manufacturing a semiconductor device includes: loading a substrate into a process container after dry-etching a portion of a silicon film formed in a recess on the substrate; performing etching to partially or entirely remove the silicon film remaining on a side wall inside the recess by supplying an etching gas selected from a hydrogen bromide gas and a hydrogen iodide gas into the process container of a vacuum atmosphere while heating the substrate; subsequently forming a silicon film inside the recess; and heating the substrate to increase a grain size of the silicon film.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

A decorative item includes a base body; a decorative portion formed by roughing a surface of the base body; and a coating layer that covers the surface of the base body including the decorative portion.

A method and apparatus for reproducing a component of a semiconductor manufacturing apparatus, and a reproduced component are provided. The method may include a preparing step of preparing a damaged component of a semiconductor manufacturing apparatus, a first cleaning step of cleaning the damaged component, a masking step of masking at least one of areas including an undamaged part of the damaged component, a reproduced part forming step of forming a reproduced part on the damaged component using a chemical vapor deposition (CVD), a post-grinding step of grinding the damaged component with the reproduced part, and a second cleaning step of cleaning the damaged component with the reproduced part.

Embodiments of the invention are directed to a system for detecting neurotransmitters. A non-limiting example of the system includes a porous electrode. A system can also include a pH sensor attached to the porous electrode, wherein the pH sensor includes a sensing electrode and a reference electrode. The system can also include electronic circuitry in communication with the pH sensor.