Embodiments include a modular high-frequency emission source for growth of a low roughness nanocrystalline diamond film. In an embodiment, a method of fabricating a nanocrystalline diamond (NCD) film includes loading a nanodiamond-seeded silicon wafer or a bare silicon wafer that has been surface-treated and incubated into a microwave plasma-enhanced chemical vapor deposition (MWPECVD) chamber, and processing the nanodiamond-seeded silicon wafer or the bare silicon wafer that has been surface-treated and incubated with a plasma of C.sub.xH.sub.y (yx), CO.sub.2 and H.sub.2, at power greater than 50 W, to form a layer of nanocrystalline diamond thereon.

Surface having properties for reducing diffuse light due to water condensation, wherein the antifog means consist in atomic aggregates adhered to and dispersed over the surface, wherein the aggregates are selected among the transition metals and the silicon. It is also related to a method for obtaining a surface having properties for reducing diffuse light due to water condensation a wavelength selected in the range from 100 nm to 50 micrometers, comprising the steps of selecting the wavelength, obtaining a glass or polymer surface that has been subjected to optical polishing and adhering to the surface atomic aggregates which are selected among the transition metals and the silicon with a separation between them being lower than or having an order of the selected wavelength selected. Thus a durable antifogging surface is obtained.

A coating for carbide substrates employs a nanostructured coating in conjunction with a non-nanostructured coating. The nanostructured coating is produced by the addition of a refining agent flow, particular hydrogen chloride gas, during deposition, and may be produced as multiple individual nanostructured layers varying functional materials in a series. The combination of a nanostructured coating and non-nanostructured coating is believed to produce a cutting tool insert that exhibits longer life. Pre-treating the substrate with a mixture of compressed air and abrasive medium prior to coating the substrate and post-treating the coated substrate with a mixture of water and abrasive medium after the coating process is believed to further enhance the wear resistance and usage life of the cutting tool.

Technology is described for an antiwetting coating attached to a substrate (e.g., metal substate) on a liquid metal container. In one example, the liquid metal container includes a first enclosure member, a second enclosure member, liquid metal, and an antiwetting coating. The first enclosure member includes a first substrate with a first surface. The second enclosure member includes a second substrate with a second surface. The first enclosure member is positioned proximate to the second enclosure member such that a gap is formed between the first surface and the second surface. The liquid metal positioned within the gap. An antiwetting coating attached to the first surface and/or the second surface. The antiwetting coating includes chromium nitride (CrN), dichromium nitride (Cr.sub.2N), chromium (III) oxide (Cr.sub.2O.sub.3), and/or titanium aluminum nitride (TiAlN) attached to the first surface and/or the second surface.

Disclosed is a semiconductor device structure including a III-V compound semiconductor material layer, a polycrystalline CVD diamond material layer, and an interface region, having a diamond nucleation layer, between the III-V compound semiconductor material layer and the polycrystalline CVD diamond material layer. A Raman signal generated from a region having the diamond nucleation layer exhibits an sp3 carbon peak at 1332 cm.sup.1 having a full width half-maximum of no more than 5.0 cm.sup.1. The Raman signal further exhibits one or both of the following characteristics: (i) an sp2 carbon peak at 1550 cm.sup.1 having a height no more than 20% of a height of the sp3 carbon peak; and (ii) the sp3 carbon peak at 1332 cm.sup.1 is no less than 10% of local background intensity. The diamond nucleation layer further includes an average nucleation density range of 110.sup.8 cm.sup.2 to 110.sup.12 cm.sup.2.

A cylinder for an internal combustion engine may include a metallic cylinder body and an amorphous diamond-like hard carbon film disposed on an internal peripheral surface of the cylinder body. The amorphous diamond-like carbon film may include a roughness ranging from Rz 0.5 m to Rz 4.0 m.

The present invention realizes a polymer substrate with hard coating layer comprising a high level of environmental resistance and a high level of abrasion resistance.

A polymer substrate with hard coating layer is provided that comprises a polymer substrate (60) having a thickness of 1 mm to 20 mm and a hard coating layer (70,80) on the surface thereof. Here, in this polymer substrate with hard coating layer, the hard coating layer (70,80) is laminated on the surface of the polymer substrate, contains as a main component thereof a hydrolysis-condensation product of an organic silicon compound, has a thickness of 0.1 m to 20 m, makes direct contact with a cured underlayer on the opposite side of the polymer substrate, is formed from an organic silicon compound by PE-CVD, and satisfies all of the following requirements (a) to (c): (a) film thickness of the silicon oxide layer is within the range of 3.5 m to 9.0 m, (b) maximum indentation depth of the surface of the silicon oxide layer as determined by measuring nanoindentation under conditions of a maximum load of 1 mN is 150 nm or less, and (c) the value of critical compression ratio K of the silicon oxide layer, as defined by formula (1) in a 3-point bending test of the polymer substrate with hard coating layer that imparts indentation displacement in which the surface laminated with the silicon oxide layer becomes concave, is 0.975 or less.

Disclosed is a semiconductor device structure including a III-V compound semiconductor material layer, a polycrystalline CVD diamond material layer, and an interface region, having a diamond nucleation layer, between the III-V compound semiconductor material layer and the polycrystalline CVD diamond material layer. A Raman signal generated from a region having the diamond nucleation layer exhibits an sp3 carbon peak at 1332 cm.sup.1 having a full width half-maximum of no more than 5.0 cm.sup.1. The Raman signal further exhibits one or both of the following characteristics: (i) an sp2 carbon peak at 1550 cm.sup.1 having a height no more than 20% of a height of the sp3 carbon peak; and (ii) the sp3 carbon peak at 1332 cm.sup.1 is no less than 10% of local background intensity. The diamond nucleation layer further includes an average nucleation density range of 110.sup.8 cm.sup.2 to 110.sup.12 cm.sup.2.

A method for manufacturing a micromechanical timepiece part starting from a silicon-based substrate, including, forming pores on the surface of at least one part of a surface of said silicon-based substrate of a determined depth, entirely filling the pores with a material chosen from diamond, diamond-like carbon, silicon oxide, silicon nitride, ceramics, polymers and mixtures thereof, in order to form, in the pores, a layer of the material of a thickness at least equal to the depth of the pores. A micromechanical timepiece part including a silicon-based substrate which has, on the surface of at least one part of a surface of the silicon-based substrate, pores of a determined depth, the pores being filled entirely with a layer of a material chosen from diamond, diamond-like carbon, silicon oxide, silicon nitride, ceramics, polymers and mixtures thereof, of a thickness at least equal to the depth of the pores.

The present invention is a method for growing diamond on a silicon substrate, the method includes: subjecting a surface of the silicon substrate to damage as a pretreatment so as to make a Raman shift of a peak at 520 cm-1 in Raman spectroscopy 0.1 cm-1 or more, or subjecting the surface of the silicon substrate to unevenness formation as the pretreatment so as to make a surface roughness Sa measured by AFM 10 nm or more, or subjecting the surface of the silicon substrate to both the damage and the unevenness formation thereon as the pretreatment, and growing diamond by a CVD method on the silicon substrate subjected to the pretreatment. This provides a method for growing diamond on a silicon substrate and a method for selectively growing diamond on a silicon substrate.