Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

A selective plasma enhanced atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material that the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to a plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a dielectric film on the dielectric material.

Methods for reducing metal oxide layers on semiconductor devices to pure metal layers using microwave radiation are described. The method includes exposing a semiconductor substrate surface to microwave radiation to reduce a metal oxide layer on a metal material. The semiconductor substrate surface may have at least one feature extending a depth from the substrate surface to a bottom and having two sidewalls, where the bottom includes the metal oxide layer and the two sidewalls include a dielectric material.

Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

An electronic chip including a semiconductor substrate in and on which an integrated circuit is formed at least one connection metallization of the integrated circuit formed on the side of a front face of the semiconductor substrate and a first passivation layer covering the front face of the semiconductor substrate, the first passivation layer including openings in line with the connection metallization of the integrated circuit The chip having a second passivation layer covering the side flanks of the semiconductor substrate, the second passivation layer being made of a parylene, and the first passivation layer and the second passivation layer being in contact with each other on the side of the front face of the semiconductor substrate. Methods of making a device are also provided.

A method includes forming an abrasion-resistant coating on a substrate including graphite, and grinding the coating to a predetermined flatness index and a predetermined roughness index. An assembly includes the substrate including graphite, and the abrasion-resistant coating formed on the substrate. The assembly may be configured to operate at elevated temperatures.

A method and system is provided for reducing surface roughness of a diesel engine component. The method and system may apply a voltage to a plasma electrolyte polishing cell. The plasma electrolyte polishing cell may include a diesel engine component and an aqueous electrolyte solution. The method and system may cause a plasma layer to form around a surface of the diesel engine component as a result of applying the voltage to the plasma electrolyte polishing cell. The method and system may terminate the voltage to the plasma electrolyte polishing cell. The method and system may apply a coating process to the diesel engine component.

A method for selectively depositing a mask protection material using non-plasma treatments includes performing a non-plasma vapor treatment and performing a non-plasma halide treatment. During the non-plasma vapor treatment, a mask having openings exposing an underlying layer is treated with a non-plasma vapor to selectively deposit a first component of a mask protection material on the mask. During the non-plasma halide treatment, the mask and the underlying layer are treated with a non-plasma halide gas to selectively deposit a second component of the mask protection material on the mask. The non-plasma treatments are performed sequentially, but may be performed in either order. An optional pretreatment may be performed prior to the non-plasma treatments during which the mask is pretreated to form a reactive surface.