Patent classifications
C23C16/0254
Method for producing a consolidated fiber preform
A method for producing a consolidated fiber preform intended for the manufacture of a part made of composite material, includes shaping a fiber texture in a heated metal mold, the texture being pre-impregnated with a transient or fugitive material, or shaping a fiber texture in a metal mold and injecting a transient or fugitive material into the fiber texture held in shape in the metal mold, cooling the mold, removing the set fiber preform from the mold, coating the fiber preform with a slurry containing a powder of ceramic or carbon particles, heat-treating the coated fiber preform so as to form a porous shell around the fiber preform by consolidation of the slurry and so as to remove the transient or fugitive material present in the fiber preform, consolidating the fiber preform by gas-phase chemical infiltration.
Method of manufacture for a lightweight, high-precision silicon carbide mirror assembly
An aerospace mirror having a reaction bonded (RB) silicon carbide (SiC) mirror substrate, and a SiC cladding on the RB SiC mirror substrate forming an optical surface on a front side of the aerospace mirror. A method for manufacturing an aerospace mirror comprising obtaining a green mirror preform comprising porous carbon, silicon carbide (SiC), or both, the green mirror preform defining a front side of the aerospace mirror and a back side of the aerospace mirror opposite the front side; removing material from the green mirror preform to form support ribs on the back side; infiltrating the green mirror preform with silicon to create a reaction bonded (RB) SiC mirror substrate from the green mirror preform; forming a mounting interface surface on the back side of the aerospace mirror from the RB SiC mirror substrate, and forming a reflector surface of the RB SiC mirror substrate on the front side of the aerospace mirror. Additionally, the method can comprise cladding the reflector surface of the RB SiC mirror substrate with SiC to form an optical surface of the aerospace mirror.
Preventing deposition on pedestal in semiconductor substrate processing
A heat shield structure for a substrate support in a substrate processing system includes an outer shield configured to surround a stem of the substrate support. The outer shield is further configured to define an inner volume between the outer shield and an upper portion of the stem and a lower surface of the substrate support and a vertical channel between the outer shield and a lower portion of the stem of the substrate support. The outer shield includes a cylindrical portion, a first lateral portion extending radially outward from the cylindrical portion, an angled portion extending radially outward and upward from the first lateral portion, and a second lateral portion extending radially outward from the angled portion.
Method of forming a multilayer substrate comprising a layer of silicon and a layer of diamond having an optically finished (or a dense) silicon-diamond interface
A method of making a multilayer substrate, which can include a silicon layer having an optically finished surface and a chemical vapor deposition (CVD) grown diamond layer on the optically finished surface of the silicon layer. At the interface of the silicon layer and the diamond layer, the optically finished surface of the silicon layer can have a surface roughness (Ra)≤100 nm. A surface of the grown diamond layer opposite the silicon layer can be polished to an optical finish and a light management coating can be applied to the polished surface of the grown diamond layer opposite the silicon layer. A method of forming the multilayer substrate is also disclosed.
SILICON EPITAXIAL WAFER PRODUCTION METHOD AND SILICON EPITAXIAL WAFER
To provide a silicon epitaxial wafer production method and a silicon epitaxial wafer in which the DIC defects can be suppressed, a silicon epitaxial wafer production method is provided, in which an epitaxial layer is grown in a vapor phase on a principal plane of a silicon single crystal wafer. The principal plane is a {110} plane or a plane having an off-angle of less than 1 degree from the {110} plane. The silicon epitaxial wafer production method includes setting a temperature of the silicon single crystal wafer to 1140° C. to 1165° C. and growing the epitaxial layer in the vapor phase at a growth rate of 0.5 μm/min to 1.7 μm/min.
Pulley for an elevator with a friction reducing coating and method for manufacturing same
A pulley for an elevator includes a base body made e.g. from steel and having a rotation-symmetrical circumferential surface. Additionally, a friction reducing coating is applied to the circumferential surface of the base body. Due to the friction reducing coating and, optionally, due to additionally smoothing the base body's circumferential surface before depositing the coating, a very low friction between an outside surface of the pulley and a contacting surface of a suspension traction member may be obtained. Thereby, guiding characteristics of the pulley may be improved and/or alignment requirements upon installation of the pulley may be relaxed. Preferably, the coating may comprise diamond-like carbon (DLC) or chromium nitride (CrN) such that the coating provides for superior wear resistance, slickness, corrosion protection and electrical characteristics.
OPTICAL DEVICE FABRICATION
Transparent conductive coatings are polished using particle slurries in combination with mechanical shearing force, such as a polishing pad. Substrates having transparent conductive coatings that are too rough and/or have too much haze, such that the substrate would not produce a suitable optical device, are polished using methods described herein. The substrate may be tempered prior to, or after, polishing. The polished substrates have low haze and sufficient smoothness to make high-quality optical devices.
DEVICE AND METHOD FOR OPENLY AND CONTINUOUSLY GROWING CARBON NANOMATERIALS
The invention discloses equipment and preparation method for open and continuous growth of a carbon nanomaterial. The equipment comprises a metal foil tape feeding system, a CVD system and a collection system. The method includes continuously conveying a metal foil tape pretreated or not into the CVD system via the metal foil tape feeding system, depositing a required carbon nanomaterial on the surface of the metal foil tape by CVD, directly collecting by the collection system or directly post-treating the carbon nanomaterial by a post-treatment system, and even directly producing a end product of the carbon nanomaterial. All the systems in the invention are arranged in the open atmosphere rather than an air-isolated closed space. The invention can realize round-the-clock continuous operation to greatly improve the production efficiency of carbon nanomaterials.
METHOD FOR FABRICATING A TRANSPARENT ELECTRODE
A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.
Substrate processing method of forming a plating film in a recess
A substrate processing method includes preparing a substrate, forming a plating inhibiting film and forming a plating film. In the preparing of the substrate, the substrate W which has a recess 101 formed on a front surface thereof and a seed layer 102 formed on the front surface and an inner surface of the recess is prepared. In the forming of the plating inhibiting film, the plating inhibiting film 103C is formed on an upper portion of the recess. In the forming of the plating film, the plating film 104 is formed in the recess by bringing the substrate into contact with a plating liquid after the forming of the plating inhibiting film, to thereby fill the recess with the plating film.