According to one embodiment, a processing apparatus includes a chamber, a first gas introduction port that introduces a first gas into the chamber, a first gas discharge port that discharges the first gas from the chamber, and a stage that supports a processing object in the chamber. The processing apparatus has a plasma generating section with an electrode to generate a plasma in the chamber. The processing apparatus includes a shield at a first position that is between the plasma generating section and the stage. The shield is light transmissive, but blocks radicals and ions generated with plasma. In some examples, the shield may be moveable from the first position to another position that is not between the plasma generating section and the stage.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

A masking block includes a base substrate, a gamma-alumina thin film disposed on the base substrate, and a hexagonal boron nitride thin film doped with carbon and oxygen and disposed on the gamma-alumina thin film. An amount of carbon in the hexagonal boron nitride thin film is 1 at % to 15 at %.

A surface-coated cutting tool has a rake face and a flank face, and includes a base material and a coating formed on the base material. The base material has a cutting edge face connecting the rake face to the flank face. The coating includes an aluminum oxide layer containing a plurality of aluminum oxide crystal grains. The aluminum oxide layer includes: a first region made up of a region A on the rake face and a region B on the flank face; a second region on the rake face except for the region A; and a third region on the flank face except for the region B. The aluminum oxide layer satisfies a relation: b−a>0.5, where a is an average value of TC(006) in the first region in texture coefficient TC(hkl), and b is an average value of TC(006) in the second or third region in texture coefficient TC(hkl).

A self-supporting ultra-fine nanocrystalline diamond thick film, the thickness being 100-3000 microns, wherein 1 nanometer≤diamond grain size≤20 nanometers. A method for using chemical vapor deposition to grow ultra-fine nanocrystalline diamond on a silicon substrate, and separating the silicon substrate and the diamond to acquire the self-supporting ultra-fine nanocrystalline diamond thick film. The chemical vapor deposition method is simple and effective, and prepares a high-quality ultra-fine nanocrystalline diamond thick film.

A coated cutting tool comprising a substrate and a coating layer formed on a surface of the substrate, wherein: the coating layer comprises a lower layer, an intermediate layer and an upper layer, the lower layer, the intermediate layer and the upper layer being laminated in order from the substrate side toward a surface side of the coating layer; the lower layer comprises a Ti compound layer; the intermediate layer contains α-Al.sub.2O.sub.3; the upper layer contains TiCN; an average thickness of each of the lower layer, the intermediate layer, and the upper layer is within a specific range; a ratio of a length of Σ3 grain boundaries to a total 100% length of all grain boundaries in a specific region of the upper layer is from 20% or more to 60% or less; and a ratio of (111)-oriented grains in the upper layer is 30 area % or more.

A method of forming an aluminum nitride film includes: preparing a substrate that comprises, in a surface thereof, a plurality of concave portions that are separated from each other; forming an aluminum nitride film on said surface of the substrate and on an inner surface of each of the concave portions such that open holes are formed in a portion of the aluminum nitride film corresponding to each of the concave portions, each of the holes being smaller than each of openings of the concave portions; and applying heat treatment to the substrate with the aluminum nitride film formed thereon in a nitrogen gas containing a carbon monoxide gas to close the holes formed in the aluminum nitride film.

A support substrate 2 is a polycrystalline SiC substrate formed of polycrystalline SiC. Assuming that one of the two sides of the polycrystalline SiC substrate is a first side and that the other side is a second side, a substrate grain size change rate of the polycrystalline SiC substrate, which is a value obtained by dividing a difference between the average value of crystal grain sizes of the polycrystalline SiC on the first side and the average value of crystal grain sizes of the polycrystalline SiC on the second side by a thickness of the polycrystalline SiC substrate, is 0.43% or less. A radius of curvature of the polycrystalline SiC substrate is 142 m or more.

A coating comprising a bottom layer comprising a hard physical vapor deposition (PVD) coating applied to the end mill. The bottom layer has an edge-prep and polished top surface with reoriented cutting forces. The coating includes a top layer comprising a friction reducing coating applied to the top surface of the bottom layer to prevent or minimize titanium or titanium alloy adhesion to the end mill during milling operations of a metal object comprising the titanium or titanium alloy. The coating has a chemical composition which has inertness toward titanium or titanium alloy. A cutter tool and method are also provided.

A multi-layered beauty care product is provided. The beauty care product has a layer of a water-soluble film zone with a water-soluble film forming polymer and a cosmetic composition with a skin active agent. The product also has a vapor-deposited coating. The vapor-deposited coating is a poly(p-xylylene) polymer and/or a metal oxide inorganic coating.