A coated cutting tool having a substrate and a coating is provided. The coating includes an inner α-Al.sub.2O.sub.3-multilayer and an outer α-Al.sub.2O.sub.3-single-layer. The thickness of the inner α-Al.sub.2O.sub.3-multilayer is less than or equal to 35% of the sum of the thickness of the inner α-Al.sub.2O.sub.3-multilayer and the thickness of the outer α-Al.sub.2O.sub.3-single-layer. The sum of the thickness of the inner α-Al.sub.2O.sub.3-multilayer and the outer α-Al.sub.2O.sub.3-single-layer is 2-15 μm. The inner α-Al.sub.2O.sub.3-multilayer consists of alternating sublayers of α-Al.sub.2O.sub.3 and sublayers of TiCO, TiCNO, AlTiCO or AlTiCNO. The inner α-Al.sub.2O.sub.3-multilayer can include at least 5 sublayers of α-Al.sub.2O.sub.3.

A method of forming a tungsten film in a penetration portion provided in a film formed on a surface of a base so as to expose the surface of the base includes: forming a barrier metal film made of a nitride of a transition metal in the penetration portion such that the barrier metal film formed on the exposed surface of the base is thicker than the barrier metal film formed on a side wall of the penetration portion; and selectively forming the tungsten film on the exposed surface of the base by supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas to the penetration portion.

An epitaxial deposition process, such as atomic layer deposition, is provided for forming a thin film comprising beta-gallium oxide (β-Ga.sub.2O.sub.3) on a substrate, such as sapphire. The process involves depositing a buffer layer of metastable Ga.sub.2O.sub.3, such as α-Ga.sub.2O.sub.3, on the substrate, and then reacting a gallium precursor, such as TEG, with an oxygen precursor, such as oxygen plasma, to deposit a layer comprising β-Ga.sub.2O.sub.3 on the buffer layer. The Ga.sub.2O.sub.3 film formed by the process may comprise highly oriented crystalline β-Ga.sub.2O.sub.3, with negligible amounts of other Ga.sub.2O.sub.3 polymorphs.

The present invention provides a method of forming a self-rolled metallic nanosheet. The method includes providing a bendable polymeric substrate and forming a hydrogel-based separation layer on the bendable polymeric substrate. A thin-film metallic nanosheet is deposited on the hydrogel-based separation layer, the thin-film metallic nanosheet having a thickness of approximately 150 nm or less to form a nanosheet-hydrogel-polymer composite. Channel cracks are induced in the nanosheet-hydrogel-polymer composite. The hydrogel layer is swelled to delaminate the metallic nanosheet employing the induced channel cracks to form one or more nano-morphology structures selected from scroll morphology, ribbon morphology, spiral morphology, or helix morphology.

Provided is a more efficient method of manufacturing a GaN film by the atomic layer deposition (ALD), wherein a high crystalline GaN film containing very few impurities is manufactured using a monovalent gallium compound without high-temperature thermal treatment such as laser annealing. The method of manufacturing a crystalline gallium nitride thin film by the ALD comprises a step 1 of feeding a monovalent organogallium complex into a reaction chamber where a substrate temperature is 350° C. or less, and a step 2 of feeding a nitriding gas into the reaction chamber.

Proposed is an edge ring for a semiconductor manufacturing process, and specifically, to an edge ring for a semiconductor manufacturing process, which has a denser surface structure by forming a denser boron carbide surface layer on the surface of a sintered body (base layer) formed of boron carbide powder and forming a mixed layer for preventing peeling between the base layer and the surface layer and improving physical properties therebetween, and thus the boron carbide sintered body is prevented from being cracked during a harsh plasma process, and particle generation caused by the cracking is effectively suppressed, and as a result, a defective product rate can be reduced, and a manufacturing method thereof.

A semiconductor device has a first substrate made of a first semiconductor material, such as silicon. A sacrificial layer is formed over a first surface of the first substrate. A seed layer is formed over the sacrificial layer. A compliant layer is formed over a second surface of the first substrate opposite the first surface of the first substrate. A first semiconductor layer made of a second semiconductor material, such as silicon carbide, dissimilar from the first semiconductor material is formed over the sacrificial layer. The first substrate and sacrificial layer are removed leaving the first semiconductor layer substantially defect-free. The first semiconductor layer containing the second semiconductor material is formed at a temperature greater than a melting point of the first semiconductor material. A second semiconductor layer is formed over the first semiconductor layer with an electrical component formed in the second semiconductor layer.

A semiconductor processing system includes a gas delivery module, and a chamber body connected to the gas delivery module. The divider has an aperture, is fixed within an interior of the chamber body, and separates an interior of the chamber body into upper and lower chambers, the aperture fluidly coupling the lower chamber to the upper chamber. A susceptor is arranged within the aperture. A controller is operably connected to the gas delivery module to purge the lower chamber with a first purge flow including an etchant while etching the upper chamber, purge the lower chamber with a second purge flow including the etchant while depositing a precoat in the upper chamber, and purge the lower chamber with a third purge flow including the etchant while depositing a film onto a substrate in the upper chamber. Film deposition methods and lower chamber etchant purge kits are also described.

A film formation method for selectively forming a film on a substrate includes: a preparation step of preparing a substrate having a surface on which a first film and a second film are exposed; a first film forming step of supplying a compound for forming a self-assembled monolayer onto the substrate to form the self-assembled monolayer on the first film, the compound having a functional group including fluorine and carbon and suppressing formation of a third film; a second film forming step of forming the third film on the second film; and a first removal step of removing the third film formed in a vicinity of the self-assembled monolayer by irradiating the surface of the substrate with ions or active species, wherein the third film is a film which forms a volatile compound more easily than the first film by being bonded to fluorine and carbon in the self-assembled monolayer.

A coated cutting tool, comprising: a substrate; and a coating layer formed on a surface of the substrate, wherein the coating layer includes a lower layer and an upper layer in this order from a substrate side toward a surface side, and the upper layer is formed on a surface of the lower layer, the lower layer contains a compound having a composition represented by (Al.sub.xTi.sub.1-x)N, an average thickness of the lower layer is 1.0 μm or more and 15.0 μm or less, the upper layer contains an α-Al.sub.2O.sub.3 layer containing α-Al.sub.2O.sub.3, an average thickness of the upper layer is 0.5 μm or more and 15.0 μm or less, and in grains of the α-Al.sub.2O.sub.3 layer, a proportion of grains of which a grain size is 0.05 μm or more and less than 0.5 μm is 50% by area or more and 80% by area or less.