A polycrystalline diamond is formed on a substrate to form a polycrystalline diamond compact (PDC) cutter for a tool. The polycrystalline diamond has a cross-sectional dimension of at least 4 millimeters. The substrate includes tungsten carbide. An outer surface of the PDC cutter is at least partially surrounded with at least a single layer of coating by atomic layer deposition. The single layer of coating is configured to protect the PDC cutter from thermal degradation in response to exposure to a temperature greater than 700 degrees Celsius (° C.) and less than about 1050° C.

There is provided a method of forming a carbon film on a workpiece, which includes: loading the workpiece into a process chamber; supplying a gas containing a boron-containing gas into the process chamber to form a seed layer composed of a boron-based thin film on a surface of the workpiece; and subsequently, supplying a hydrocarbon-based carbon source gas and a pyrolysis temperature lowering gas containing a halogen element and which lowers a pyrolysis temperature of the hydrocarbon-based carbon source gas into the process chamber, heating the hydrocarbon-based carbon source gas to a temperature lower than the pyrolysis temperature to pyrolyze the hydrocarbon-based carbon source gas, and forming the carbon film on the workpiece by a thermal CVD.

There is provided a method of forming a carbon film on a workpiece, which includes: loading the workpiece into a process chamber, and supplying a hydrocarbon-based carbon source gas and a pyrolysis temperature drop gas for dropping a pyrolysis temperature of the hydrocarbon-based carbon source gas into the process chamber, pyrolyzing the hydrocarbon-based carbon source gas by heating the hydrocarbon-based carbon source gas at a temperature lower than a pyrolysis temperature of the hydrocarbon-based carbon source gas, and forming the carbon film on the workpiece by a thermal CVD method. An iodine-containing gas is used as the pyrolysis temperature drop gas.

Methods for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.

A ruthenium film forming method includes: causing chlorine to be adsorbed to an upper portion of a recess at a higher density than to a lower portion of the recess by supplying a chlorine-containing gas to a substrate including an insulating film and having the recess; and forming a ruthenium film in the recess by supplying a Ru-containing precursor to the recess to which the chlorine is adsorbed.

A compound structure and a forming method thereof are provided. The method of forming a compound structure according to embodiments of the present invention comprises loading a metal precursor on a substrate, providing a chalcogen precursor to the substrate, and reacting the chalcogen precursor with the metal precursor. The compound structure according to embodiments of the present invention is formed by the method and has a 2-dimensional structure.

The present disclosure provides methods and compositions for surface functionalization of solid substrates. The compositions include functionalized silanes and nucleic acid constructs which may react to immobilize the nucleic acid constructs on the surface on the solid substrate. The disclosure also provides methods for immobilization of silanes and nucleic acid constructs on the surface of the substrate.

A method is disclosed for delectively depositing a material on a substrate wherein the substrate has at least two different surfaces wherein one surface is passivated thereby allowing selective deposition on the non-passivated surface. In particular, disclosed is a method for preparing a surface of a substrate for selective film deposition, wherein the surface of the substrate comprises at least a first surface comprising SiO.sub.2 and an initial concentration of surface hydroxyl groups and a second surface comprising SiH, the method comprising the steps of: contacting the substrate with a wet chemical composition to obtain a treated substrate comprising an increased concentration of surface hydroxyl groups relative to the initial concentration of surface hydroxyl groups; and heating the treated substrate to a temperature of from about 200° C. to about 600° C., wherein the heating step converts at least a portion of the surface hydroxyl groups on the first surface to surface siloxane groups on the surface of the substrate.

A coating structure includes a base made of metal, a foundation layer provided on the base, and an insulation film provided on the foundation layer. The insulation film includes a plurality of layers, each layer of the plurality of layers being different in material, the plurality of layers being layered alternately with each other. The foundation layer is provided by a method other than a coating method using a surface chemical reaction occurring on the base, and a part of the foundation layer in contact with the base is amorphous. According to this, when a foreign material adheres on the base, the foreign material can be covered by the foundation layer. Since the insulation film is provided on the foundation layer, forming defects of the insulation film caused by the foreign material can be limited.

There is provided a technique that includes: (a) forming a silicon seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a1) supplying a first gas containing halogen and silicon to the substrate; and (a2) supplying a second gas containing hydrogen to the substrate; and (b) forming a film containing silicon on the silicon seed layer by supplying a third gas containing silicon to the substrate, wherein a pressure of a space in which the substrate is located in (a2) is set higher than a pressure of the space in which the substrate is located in (a1).