A method for forming a film, the method including: forming a SiCN seed layer on a substrate by a thermal ALD, forming a SiN protective layer on the SiCN seed layer by a thermal ALD, and forming a SiN bulk layer on the SiN protective layer by a plasma enhanced ALD.

Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.

There is a superconducting article that includes a superconducting film comprising a substrate, one or more buffer layers, and a high temperature superconducting (HTS) layer. The superconducting layer may be comprised of the chemical composition REBa.sub.2Cu.sub.3O.sub.7−x, where RE is one or more rare earth elements, for example: Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The superconductor layer is produced using Photo-Assisted Metal Organic Chemical Vapor Deposition (PAMOCVD) and contains non-superconducting nanoparticles. The nanoparticles are substantially provided in the a-b plane and naturally oriented. The non-superconducting nanoparticles provide flux pinning centers that improve the critical current properties of the superconducting film.

It is an object to provide a functional film which does not require formation of a protective layer by laminating and applying a protective film, and sticking of the protective layer, and also has high moist heat resistance; and a method for producing the same. The object is accomplished by a configuration where the functional film includes a support, an inorganic layer, and a protective layer consisting of a resin film, in which the inorganic layer and the protective layer are directly joined to each other, and in a case where an intensity ratio obtained by dividing an intensity of a maximum peak B in a range of 2,900 to 3,000 cm.sup.−1 by an intensity of a maximum peak A in a range of 2,800 to 2,900 cm.sup.−1 in an infrared absorption spectrum is defined as B/A, the intensity ratio B/A in a surface of the protective layer on the inorganic layer side is 1.04 times or more the intensity ratio B/A in a surface of the protective layer on the opposite side.

A semiconductor arrangement is provided. The semiconductor arrangement includes a dielectric layer defining an opening, an adhesion layer in the opening, and a conductive layer in the opening over the adhesion layer. A material of the conductive layer is a same material as an adhesion material of the adhesion layer.

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide techniques for depositing high-density films for patterning applications. In one or more embodiments, a method of processing a substrate is provided and includes flowing a deposition gas containing a hydrocarbon compound and a dopant compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck, where the processing volume is maintained at a pressure of about 0.5 mTorr to about 10 Torr. The method also includes generating a plasma at the substrate by applying a first RF bias to the electrostatic chuck to deposit a doped diamond-like carbon film on the substrate, where the doped diamond-like carbon film has a density of greater than 2 g/cc and a stress of less than −500 MPa.

A method for forming a semiconductor device includes: a substrate is provided; a barrier layer is formed on an upper surface of the substrate, and a proportion of crystal orientation <111> in crystal orientations of the barrier layer is at least a preset value; and a metal material layer is formed on an upper surface of the barrier layer, crystal orientations of the metal material layer including a crystal orientation <111>.

Methods of applying an inorganic material to a metal substrate that includes a metallic material having an austenite transformation temperature. The method includes depositing inorganic particles onto a surface of the metal substrate. In some embodiments, methods may include depositing inorganic particles at a deposition temperature that does not cause the metallic material to exceed the austenite transformation temperature. The inorganic particles deposited onto the surface of the metal substrate may form an abrasion-resistant coating on the surface of the metal substrate. The difference between the coefficient of thermal expansion of the metallic material and the coefficient of thermal expansion of the abrasion-resistant coating may be 10×10.sup.−6/degrees C. or less.

The present invention, in some embodiments thereof, provides a preparation method of a miniature solid silicon needle. The preparation method includes the following steps: growing one layer of silicon dioxide on a surface of monocrystalline silicon; depositing one layer of silicon nitride protective film on a surface of the silicon dioxide; coating a surface of the silicon nitride protective film with photoresist; and performing exposing, developing and etching, wherein the protective film adopts silicon nitride and is capable of accelerating etching reaction in the process of etching silicon, so that a diameter of a base of the silicon needle is smaller. According to the present invention, the process is simple, and the solid silicon needle has high durability and is suitable for transdermal drug permeation of biomacromolecule drugs.

Provided is a photocathode structure including: a photocathode including silicon (Si); an intermediate layer formed on the photocathode, and including a silicon oxide (SiO.sub.x); and a protective layer foiled on the intermediate layer, and including a metal oxide, wherein the intermediate layer is a tunneling barrier configured to transfer charges from the photocathode to the protective layer by an electric field applied from an outside.