A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.

A conformally metal-coated glass capillary array and method of fabricating same. A glass capillary array is provided. The glass capillary array includes a plurality of glass capillaries. The glass capillary array includes a plurality of glass capillary array walls. The plurality of glass capillary array walls define a plurality of holes. The plurality of holes includes a plurality of hole peripheries. An electroless metallization catalyst is provided around the plurality of hole peripheries. A first metal is electroless plated on the plurality of glass capillary array walls using the electroless metallization catalyst. A second metal is electroplated on the electroless-plated, first metal, or the second metal is electroless-plated on the electroless-plated, first metal.

Methods of mitigating line bending during feature fill include deposition of an amorphous layer and/or an inhibition treatment during fill.

A method for producing a crystalline oxide semiconductor film in which, a crystalline oxide semiconductor layer and a light absorbing layer are laminated on a substrate, the light absorbing layer is irradiated with light to decompose the light absorbing layer and separate the crystalline oxide semiconductor layer and the substrate to produce a crystalline oxide semiconductor film. This provides a method for industrially advantageously producing a crystalline oxide semiconductor film, for example, a crystalline oxide semiconductor film useful for a semiconductor device (particularly a vertical element).

Methods of forming structures including a photoresist underlayer and an adhesion layer and structures including the photoresist underlayer and adhesion layer are disclosed. Exemplary methods include forming the photoresist underlayer and forming an adhesion layer using a cyclical deposition process. The adhesion layer can be formed within the same reaction chamber used to form the photoresist underlayer.

A layer system includes barrier properties against oxygen and water vapor. There may be an alternating layer system of at least two aluminum oxide layers and at least two titanium oxide layers. The aluminum oxide layers and the titanium oxide layers are deposited alternately on top of one another. The aluminum oxide layers and the titanium oxide layers are deposited by ALD layer deposition with a layer thickness of 5 nm to 20 nm. A first Parylene layer is deposited with a layer thickness of 0.1 μm to 50 μm on a first side of the alternating layer system by CVD.

In a gas-barrier aluminum deposition film according to one embodiment of the present invention, a seed coating layer containing functional groups of at least one type selected from among a hydroxyl group (—OH), an amine group (—NH), and a carboxylic acid group (—COOH) is formed on a thermoplastic plastic base film to form a seed molecular layer that enables uniform deposition of aluminum, such as AlOx or AlNx, through chemical reaction, on a surface of the coating layer, with aluminum atoms vaporized at the initial stage of aluminum deposition, thereby inducing uniform deposition of an aluminum layer to be subsequently deposited. Therefore, it is possible to provide a deposited film having superior oxygen and water vapor barrier properties compared to existing aluminum deposition films.

The present invention includes: transferring a C-plane sapphire thin film 1t having an off-angle of 0.5-5° onto a handle substrate composed of a ceramic material having a coefficient of thermal expansion at 800 K that is greater than that of silicon and less than that of C-plane sapphire; performing high-temperature nitriding treatment on the GaN epitaxial growth substrate 11 and covering the surface of the C-plane sapphire thin film 1t with a surface treatment layer 11a made of AlN; having GaN grow epitaxially on the surface treatment layer 11a; ion-implanting a GaN film 13; pasting and bonding together the GaN film-side surface of the ion-implanted GaN film carrier and a support substrate 12; performing peeling at an ion implantation region 13.sub.ion in the GaN film 13 and transferring a GaN thin film 13a onto the support substrate 12; and obtaining a GaN laminate substrate 10.

In one aspect, cutting tools are described herein comprising wear resistant coatings employing one or more refractory layers of polycrystalline α-Al.sub.2O.sub.3. Briefly, a coated cutting tool described herein comprises a substrate, and a coating adhered to the substrate, the coating comprising a layer of polycrystalline α-Al.sub.2O.sub.3 deposited by chemical vapor deposition (CVD), wherein at least 5% of all grain boundaries in the polycrystalline α-Al.sub.2O.sub.3 layer have a misorientation angle less than 15 degrees as determined using a field-emission scanning electron microscope (FESEM) and an electron backscatter diffraction (EBSD) detector.

A substrate processing method includes: a carry-in step of carrying a substrate having a silicon-containing film on a surface of the substrate into a processing container; a first step of forming an adsorption layer by supplying an oxygen-containing gas into the processing container and causing the oxygen-containing gas to be adsorbed on a surface of the silicon-containing film; a second step of forming a silicon oxide layer by supplying an argon-containing gas into the processing container and causing the adsorption layer and the surface of the silicon-containing film to react with each other with plasma of the argon-containing gas; and a third step of forming a graphene film on the silicon oxide layer by supplying a carbon-containing gas into the processing container with plasma of the carbon-containing gas.