The present invention provides a method for manufacturing a graphene composite electrode material, including the following steps: (1) providing a glass substrate, the glass substrate having a melting point greater than 1100° C.; (2) washing the glass substrate and then forming a metal film on the glass substrate; (3) patterning the metal film to form a circuit pattern; and (4) forming a graphene film on the circuit pattern so as to form a graphene composite electrode material. The method for manufacturing a graphene composite electrode material according to the present invention uses a temperature resistant glass substrate and a metal catalyst to directly grow a graphene film on a circuit pattern thereby requiring no transfer, not affected by solvent applied in transfer, having relatively high quality of film formation, requiring no etching, allowing for direct formation of a graphene composite electrode material, having a simple process, providing an effect of protection of the metal circuit pattern due to stable chemical property of graphene, and thus effectively extending the service life of the graphene composite electrode material.

A vapor deposition mask includes a metal mask and a resin mask having an opening. An inner wall surface for composing the opening has an inflection point in a thicknesswise cross section of the resin mask. When an intersection of a first surface, not facing the metal mask, of the resin mask and the inner wall surface is set to be a first intersection, an intersection of a second surface, facing the metal mask, of the resin mask and the inner wall surface is set to be a second intersection, and there is set a first inflection point first positioned from the first intersection toward the second intersection, an angle formed by a line connecting the first intersection and the first inflection point and the first surface is larger than an angle formed by a line connecting the first inflection point and the second intersection and the second surface.

An apparatus for manufacturing a display apparatus includes a stage supporting a substrate, a deposition gas supplying unit above the substrate, the deposition gas supplying unit spraying a deposition gas onto the substrate, and a first mask between the stage and the deposition gas supplying unit, the first mask including at least two first openings through which the deposition gas selectively passes.

A film forming apparatus comprises a film forming vessel comprising a first mold and a second mold that is arranged to be opposed to the first mold. The first mold is configured to include a first recessed portion and a first planar portion arranged around the first recessed portion and an exhaust port in a bottom portion of the first recessed portion. The film forming apparatus also comprises a seal member placed between the first planar portion of the first mold and the second mold. The seal member is configured to keep inside of the film forming vessel airtight; and an exhaust device connected with the exhaust port. The work is placed away from the first planar portion such that a film formation target part of the work faces an internal space of the first recessed portion when the film forming vessel is closed. A film forming method comprises (a) forming a film on part of the work by the film forming apparatus; (b) opening the film forming vessel after the (a); and (e) at a start of the (b), evacuating the film forming vessel via the exhaust port by the exhaust device.

A plasma apparatus configured to form a film on or etch a work piece includes: a vacuum chamber including a first casing that has a first recess and a first flat part disposed around the first recess, and a second casing disposed opposite to the first casing; an insulating member that is disposed between the first flat part of the first casing and the second casing, and is configured to contact with the work piece in a state where the work piece faces a space inside the first recess and is separated from the first flat part; and an electricity application unit that is configured to apply electricity to the work piece, wherein a distance between the first flat part and a contact point between the work piece and the insulating member is shorter than a distance between the work piece and a bottom part of the first recess.

A film forming apparatus configured to form a film on part of a work. The film forming apparatus comprises a film forming vessel comprising a first mold located above the work and a second mold located below the work to be opposed to the first mold. The first mold is configured to include a first recessed portion that is recessed upward viewed from a film formation target part of the work and a first planar portion arranged around the first recessed portion. The second mold is configured to include a second planar portion in a place opposed to the first planar portion. The film forming apparatus also comprises a first seal member located between the first planar portion and the work. The first seal member is configured to come into contact with the first planar portion and the work when the work is away from the first planar portion. The film forming apparatus further comprises a second seal member located between the second planar portion and the work. The second seal member is configured to come into contact with the second planar portion and the work when the work is away from the second planar portion. The second seal member is provided on a lower face of the work. This configuration suppresses poor film formation when the seal member is placed between the film forming vessel and the work.

There are provided a reflective mask and a reflective mask blank reducing reflection of out-of-band light and a manufacturing method therefor. A light shielding frame is formed on a mask region corresponding to a multiply exposed boundary region between a chip and a semiconductor substrate. The frame is provided with an antireflective layer causing surface reflection in antiphase to out-of-band light reflected from the surfaces of a rear-surface conductive film and the substrate to provide a reflective mask reducing reflection of out-of-band light. The antireflective layer of the present disclosure has an electrical conductivity of 1×104/mΩ or greater to minimize charging occurring in a pattern region in observing the region using an electron microscope.

A holding device for fastening bar cutters in order for the cutting edges thereof to be coated, wherein the fastening is configured in such a way that a plurality of bar cutters can be arranged in a row such that the cutting faces and tips thereof have the same orientation, and the holding device includes a screen which at least partially protects the cutting faces from the coating, wherein, with bar cutters arranged in a row in the manner described, the top edge of the screen projects beyond the knife tips in such a way that no knife tips protrude.

A gasification component for use in a gasification environment includes a metal-based substrate and a coating deposited on the metal-based substrate. The coating includes at least about 51% by weight of chromium in the alpha phase at an operating temperature of gasification.

A mask structure for a deposition device includes first segments and second segments. The first segments are arranged in a direction surrounding a central axis and separated from one another. The second segments are disposed above the first segments. Each of the second segments overlaps two of the first segments adjacent to each other in a vertical direction parallel to an extending direction of the central axis. A deposition device includes a process chamber, a stage, and the mask structure. The stage is at least partially disposed in the process chamber and includes a holding structure of a substrate. The mask structure is disposed in the process chamber, located over the stage, and covers a peripheral region of the substrate to be held on the stage. An operation method of the deposition device includes horizontally adjusting positions of the first segments and the second segments respectively between different deposition processes.