Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

A particle collection device includes a collection sheet and a frame on which the collection sheet is mounted. The collection sheet includes a base sheet, a magnetic substance, and a metal protrusion disposed on the base sheet to be adjacent to the magnetic substance.

A method includes forming a dummy gate structure over a wafer. Gate spacers are formed on either side of the dummy gate structure. The dummy gate structure is removed to form a gate trench between the gate spacers. A gate dielectric layer is formed in the gate trench. A gate electrode is formed over the gate dielectric layer. Forming the gate dielectric layer includes applying a first bias to the wafer. With the first bias turned on, first precursors are fed to the wafer. The first bias is turned off. After turning off the first bias, second precursors are fed to the wafer.

A method of forming a metal oxide layer includes at least the following steps. A substrate is provided in a process chamber of a deposition apparatus, where the substrate has a target layer formed thereon. A first gas and a second gas are introduced into the process chamber through a shower head of the deposition apparatus, so as to form a metal oxide film on the target layer, where the shower head is coated with a hydrophobic film. A patterned photoresist layer is formed on the metal oxide film. The metal oxide film is patterned by using the patterned photoresist layer as a mask, so as to form a patterned metal oxide film. The target layer is patterned by using the patterned metal oxide film as a mask.

A mask assembly includes: a frame; an open mask disposed on the frame, and defining a first deposition opening, a second deposition opening spaced apart from the first deposition opening in a first direction, and a first dummy opening located between the first deposition opening and the second deposition opening; and a shield member including a first shield part overlapping the first dummy opening in a plan view.

Following a determination that the distance along the Z-direction between the substrate and the mask is greater than the distance along the Z-direction to the nearest end of depth of field (DOF) for a camera from the near side of the mask, a control unit reduces the distance between the X-Y position of a substrate-mark and the X-Y position of the associated mask-mark, with a high-speed relative approach along the Z-direction between the substrate and the mask. Following a determination that the distance along the Z-direction between the substrate and the mask is equal to or less than the distance along the Z-direction to the nearest end of depth of field (DOF) from the near side of the mask, the control unit reduces the distance between the X-Y position of the substrate-mark and the X-Y position of the associated mask-mark, with a reduced-speed relative approach along the Z-direction.

A mask assembly includes a first mask area including first opening areas, and a second mask area including second opening areas having centers located at vertices of virtual squares in a row direction and a column direction, half-etching areas having centers located at centers of the virtual squares, and a non-etching area surrounding the second opening areas and the half-etching areas. Each of the second opening areas includes a base portion and at least one protrusion portion protruding from the base portion.

A shadow mask having two or more levels of openings enables selective step coverage of micro-fabricated structures within a micro-optical bench device. The shadow mask includes a first opening within a top surface of the shadow mask and a second opening within the bottom surface of the shadow mask. The second opening is aligned with the first opening and has a second width less than a first width of the first opening. An overlap between the first opening and the second opening forms a hole within the shadow mask through which selective coating of micro-fabricated structures within the micro-optical bench device may occur.

A metal sheet has a longitudinal direction and a width direction. The metal sheet has shapes in the width direction that are taken at different positions in the longitudinal direction of the metal sheet and differ from one another. Each of the shapes is an undulated shape including protrusions and depressions repeating in the width direction of the metal sheet. A length in the width direction of a surface of the metal sheet is a surface distance. A minimum value of surface distances at different positions in the longitudinal direction of the metal sheet is a minimum surface distance. A ratio of a difference between a surface distance and the minimum surface distance to the minimum surface distance is an elongation difference ratio in the width direction. A maximum value of elongation difference ratios is less than or equal to 2×10.sup.−5.

A deposition apparatus and method of deposition are provided. The deposition apparatus includes a gas supply unit, including: a first process gas supply unit blowing a first process gas onto a deposition-target surface; a second process gas supply unit blowing a second process gas different from the first process gas onto the deposition-target surface of the substrate; and air curtain units blocking an area between an area where the process gas is blown and an area where the second process gas is blown, by blowing an inert gas.