A semiconductor process system includes a process chamber. The process chamber includes a wafer support configured to support a wafer. The system includes a bell jar configured to be positioned over the wafer during a semiconductor process. The interior surface of the bell jar is coated with a rough coating. The rough coating can include zirconium.

A method of forming a tungsten film in a penetration portion provided in a film formed on a surface of a base so as to expose the surface of the base includes: forming a barrier metal film made of a nitride of a transition metal in the penetration portion such that the barrier metal film formed on the exposed surface of the base is thicker than the barrier metal film formed on a side wall of the penetration portion; and selectively forming the tungsten film on the exposed surface of the base by supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas to the penetration portion.

A method can include vapor depositing a corrosion resistant coating to internal and external surfaces of a metallic air data probe. For example, vapor depositing can include using atomic layer deposition (ALD). The method can include placing the metallic air data probe in a vacuum chamber and evacuating the vacuum chamber before using vapor deposition. The corrosion resistant coating can be or include a ceramic coating. In certain embodiments, vapor depositing can include applying a first precursor, then applying a second precursor to the first precursor to form the ceramic coating.

Embodiments of the present disclosure generally relate to processing an optical workpiece containing grating structures on a substrate by deposition processes, such as atomic layer deposition (ALD). In one or more embodiments, a method for processing an optical workpiece includes positioning a substrate containing a first layer within a processing chamber, where the first layer contains grating structures separated by trenches formed in the first layer, and each of the grating structures has an initial critical dimension, and depositing a second layer on at least the sidewalls of the grating structures by ALD to produce corrected grating structures separated by the trenches, where each of the corrected grating structures has a corrected critical dimension greater than the initial critical dimension.

The present disclosure is directed to methods and systems for depositing a material within a gap of a substrate in a cyclic deposition process. The methods and systems utilize an inhibitor to preferentially blocks chemisorption of a subsequently introduced first precursor at a portion of available chemisorption sites in the gap to promote deeper penetration of the first precursor into the gap and/or more uniform chemisorption of the first precursor in the gap used in forming a desired material.

The invention relates to a method and an apparatus for the plasma treatment of containers. The essential aspect according to the method according to the invention is that, after the plasma treatment at the plasma station and before the container is filled, at least the container interior of the container is at least partially ventilated with a sterilization medium, i.e. is loaded with a sterilization medium.

A method for densifying one or more porous substrates with pyrolytic carbon by chemical vapour infiltration, includes admitting, at the inlet of the densification furnace, a reactive gaseous phase including at least one pyrolytic carbon precursor; reacting at least a fraction of the reactive gaseous phase with the porous substrate or substrates; extracting, at the outlet of the densification furnace, gaseous effluents originating from the reactive gaseous phase; reintroducing, with the reactive gaseous phase admitted at the inlet of the densification furnace, at least a fraction of the gaseous effluents extracted at the outlet of the furnace, wherein the fraction of the gaseous effluents introduced with the reactive gaseous phase includes at least one polyaromatic hydrocarbon compound.

Provided are a substrate processing method and a substrate processing apparatus, wherein a silicon oxide film is favorably embedded. The substrate processing method includes forming a silicon oxide film by repeating a cycle a plurality of times, the cycle including: forming an adsorption layer by supplying a silicon-containing gas to a substrate having a depression formed therein and causing the silicon-containing gas to be adsorbed on the substrate; etching at least a portion of the adsorption layer by supplying a shape control gas to the substrate; and supplying an oxygen-containing gas to the substrate and causing the oxygen-containing gas to react with the adsorption layer, wherein the temperature of the substrate is 400° C. or lower.

Proposed is an edge ring for a semiconductor manufacturing process, and specifically, to an edge ring for a semiconductor manufacturing process, which has a denser surface structure by forming a denser boron carbide surface layer on the surface of a sintered body (base layer) formed of boron carbide powder and forming a mixed layer for preventing peeling between the base layer and the surface layer and improving physical properties therebetween, and thus the boron carbide sintered body is prevented from being cracked during a harsh plasma process, and particle generation caused by the cracking is effectively suppressed, and as a result, a defective product rate can be reduced, and a manufacturing method thereof.

Molybdenum (Mo) metal-on-metal (MoM) deposition methods for providing true bottom-up fill in vias and/or other gap features in device structures. These device structures contain metal at the bottom surface and have dielectric sidewalls. The deposition process provides molybdenum growth only, in some cases, on the metal film/layer to provide a selective process that can be called a metal-on-metal (MoM) process. The Mo MoM deposition process described herein are not limited to thin films (e.g., films less than 50 Å) and can be used to deposit thicker films (e.g., greater than 50 Å in some cases and greater than 200 Å in other useful cases) on metal surfaces while no, or substantially no, deposition is found on dielectric surfaces.