A method for manufacturing a semiconductor device including a TiN film. The method comprises: supplying TiCl.sub.4 gas to a substrate; purging the TiCl.sub.4 gas; supplying NH.sub.3 gas to the substrate; purging the NH.sub.3 gas; and supplying an inhibitor that inhibits adsorption of TiCl.sub.4 or NH.sub.3 to the substrate. A plurality of cycles each including the supplying the TiCl.sub.4 gas, the purging the TiCl.sub.4 gas, the supplying the NH.sub.3 gas, and the purging the NH.sub.3 gas are performed, at least a part of the plurality of cycles includes the supplying the inhibitor, and after the supplying the inhibitor is performed, the supplying the TiCl.sub.4 gas or the supplying the NH.sub.3 gas is performed without purging the inhibitor, or, after purging the inhibitor for a shorter time than the purging the TiCl.sub.4 gas or the purging the NH.sub.3 gas, the supplying the TiCl.sub.4 gas or the supplying the NH.sub.3 gas is performed.

Embodiments of methods of filling features with molybdenum (Mo) include depositing a first layer of Mo in a feature including an opening and an interior and non-conformally treating the first layer such that regions near the opening preferentially treated over regions in the interior. In some embodiments, a second Mo layer is deposited on the treated first layer. Embodiments of methods of filling features with Mo include controlling Mo precursor flux to transition between conformal and non-conformal fill.

Methods and related systems for topographically depositing a material on a substrate are disclosed. The substrate comprises a proximal surface and a gap feature. The gap feature comprises a sidewall and a distal surface. Exemplary methods comprise, in the given order: a step of positioning the substrate on a substrate support in a reaction chamber; a step of subjecting the substrate to a plasma pre-treatment; and, a step of selectively depositing a material on at least one of the proximal surface and the distal surface with respect to the sidewall. The step of subjecting the substrate to a plasma pre-treatment comprises exposing the substrate to at least one of fluorine-containing molecules, ions, and radicals.

Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

An automated preparation method of a SiC.sub.f/SiC composite flame tube, comprising the following steps: preparing an interface layer for a SiC fiber by a chemical vapor infiltration process, and obtaining the SiC fiber with a continuous interface layer; laying a unidirectional tape on the SiC fiber with the continuous interface layer and winding the SiC fiber with the continuous interface layer to form and obtaining a preform of a net size molding according to a fiber volume and a fiber orientation obtained in a simulation calculation; and adopting a reactive melt infiltration process and the chemical vapor infiltration process successively for a densification and obtaining a high-density SiC.sub.f/SiC composite flame tube in a full intelligent way. The SiC.sub.f/SiC composite flame tube prepared by the present disclosure not only has a high temperature resistance, but also has a low thermal expansion coefficient, high thermal conductivity and high thermal shock resistance.

A method for forming ceramic matrix composite (CMC) component includes forming a fiber preform, positioning the fiber preform into a chemical vapor infiltration reactor chamber, and densifying the fiber preform. Densification includes infiltrating the fiber preform with a first gas comprising precursors of silicon carbide and infiltrating the fiber preform with a second gas comprising a first rare earth element, wherein the steps of infiltrating the fiber preform with the first gas and infiltrating the fiber preform with the second gas are conducted simultaneously to produce a first rare earth-doped silicon carbide matrix in a first region of the component.

Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.

A device for coating containers includes at least one vacuum device for generating a vacuum, and at least one treatment station for coating containers with a plasma, wherein the treatment station is in fluid communication with the vacuum device and wherein the treatment station has at least one treatment device which can be introduced into a container, a conveyor device for transporting containers on a transport path P and at least one support element to receive at least one container, wherein the support element is movable in a direction perpendicular to the transport path P of the containers and is suitable for introducing the container into a treatment station, wherein a closure element is arranged on the support element and the closure element is suitable for closing the treatment station in an airtight manner.

A film forming method includes: rotating a rotary table to revolve a substrate which is placed on the rotary table and has a recess in its surface; supplying a raw material gas to a first region on the rotary table; supplying an ammonia gas to a second region on the rotary table; forming a first SiN film in the recess by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a first flow rate, while the rotary table rotates at a first rotation speed; and forming a second SiN film in the recess such that the second SiN film is laminated on the first SiN film by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a second flow rate, while the rotary table rotates at a second rotation speed.

An atomic layer deposition method for depositing a film into surface features of a substrate is disclosed. The method may include the step of placing the substrate having surface features into a reactor. An organic passivation agent may be introduced into the 5 reactor, which may react with a portion of exposed hydroxyl radicals within the surface features. Subsequently, unreacted organic passivation agent may be purged, and then a precursor may be introduced. The precursor may react with the remaining exposed hydroxyl radicals that did not interact with the organic passivation agent. Subsequently, the unreacted precursor may be purged, and an oxygen source or a nitrogen source may 10 be introduced into the reactor to form a film within the surface features.