C23C16/047

Localized atmospheric laser chemical vapor deposition

An atmospheric, Laser-based Chemical Vapor Deposition (LCVD) technique provides highly localized deposition of material to mitigate damage sites on an optical component. The same laser beam can be used to deposit material as well as for in-situ annealing of the deposited material. The net result of the LCVD process is in-filling and planarization of a treated site, which produces optically more damage resistant surfaces. Several deposition and annealing steps can be interleaved during a single cycle for more precise control on amount of deposited material as well as for increasing the damage threshold for the deposited material.

SYSTEM AND METHOD FOR TEMPERATURE CONTROL IN PLASMA PROCESSING SYSTEM

Techniques herein include systems and methods for fine control of temperature distribution across a substrate. Such techniques can be used to provide uniform spatial temperature distribution, or a biased spatial temperature distribution to improve plasma processing of substrates and/or correct characteristics of a given substrate. Embodiments include a plasma processing system with temperature control. Temperature control systems herein include a primary heating mechanism to heat a substrate, and a secondary heating mechanism that precisely modifies spatial temperature distribution across a substrate being processed. At least one heating mechanism includes a digital projection system configured to project a pattern of electromagnetic radiation onto or into a substrate, or through the substrate and onto a substrate support assembly. The digital projection system is configured to spatially and dynamically adjust the pattern of electromagnetic radiation and selectively augment heating of the substrate by each projected point location.

Method and system for controlling coating in non-line-of-sight locations

A method for coating a turbine engine component, said method includes the steps of: placing the component into a chamber; injecting a non-reactive carrier gas containing a coating material into the chamber; and forming a coating on a desired portion of the component by locally heating the desired portion of the component by redirecting a directed energy beam onto the desired portion of the component.

HIGH TEMPERATURE GLASS-CERAMIC MATRIX WITH EMBEDDED REINFORCEMENT FIBERS

Composite materials are provided which include a glass-ceramic matrix composition that is lightly crystallized, a fiber reinforcement within the glass-ceramic matrix composition which remains stable at temperatures greater than 1400 C., and an interphase coating formed on the fiber reinforcement. A method of making a composite material is also provided, which includes applying heat and pressure to a shape including fiber reinforcements and glass particles. The heat and pressure lightly crystallize a matrix material formed by the heat and pressure on the glass particles, forming a thermally stable composite material.

FUNCTIONAL HIGH-PERFORMANCE FIBER STRUCTURE

A method is provided for growing a fiber structure, where the method includes: obtaining a substrate, growing an array of pedestal fibers on the substrate, growing fibers on the pedestal fibers, and depositing a coating surrounding each of the fibers. In another aspect, a method of fabricating a fiber structure includes obtaining a substrate and growing a plurality of fibers on the substrate according to 1?D printing. In another aspect, a multilayer functional fiber is provided produced by, for instance, the above-noted methods.

Apparatus for processing a substrate

An apparatus for processing a substrate includes a step of providing a substrate and a first step. In the step of providing a substrate, a substrate having a first film and a second film formed on the first film and having a pattern formed thereon is provided. In the first step, a protective film is formed on a side wall of the first film by a product generated by sputtering of the second film while a first processing gas is turned into plasma and the first film is etched simultaneously with the sputtering of the second film.

System and method for temperature control in plasma processing system
10147655 · 2018-12-04 · ·

Techniques herein include systems and methods for fine control of temperature distribution across a substrate. Such techniques can be used to provide uniform spatial temperature distribution, or a biased spatial temperature distribution to improve plasma processing of substrates and/or correct characteristics of a given substrate. Embodiments include a plasma processing system with temperature control. Temperature control systems herein include a primary heating mechanism to heat a substrate, and a secondary heating mechanism that precisely modifies spatial temperature distribution across a substrate being processed. At least one heating mechanism includes a digital projection system configured to project a pattern of electromagnetic radiation onto or into a substrate, or through the substrate and onto a substrate support assembly. The digital projection system is configured to spatially and dynamically adjust the pattern of electromagnetic radiation and selectively augment heating of the substrate by each projected point location.

SEED LAYER LASER-INDUCED DEPOSITION
20180298490 · 2018-10-18 · ·

A method of creating a layer of a target deposit-material, in a first target pattern, on a substrate surface. The substrate surface is placed in a vacuum and exposed to a first chemical vapor, having precursor molecules for a seed deposit-material, thereby forming a first substrate surface area that has adsorbed the precursor molecules. Then, a charged particle beam is applied to the first substrate surface area in a second target pattern, largely identical to the first target pattern thereby forming a seed layer in a third target pattern. The seed layer is exposed to a second chemical vapor, having target deposit-material precursor molecules, which are adsorbed onto the seed layer. Finally, a laser beam is applied to the seed layer and neighboring area, thereby forming a target deposit-material layer over and about the seed layer, where exposed to the laser beam.

METHOD OF BURYING SAMPLE TRENCH
20180282870 · 2018-10-04 · ·

The invention provides a method of burying trenches of a sample comprises at least the steps of: from the sample having the trenches extending from one surface into a depth direction, cutting a sample piece of a small part including the trenches; and by irradiating an electron beam toward the inside of the trenches from a side surface extending along the depth direction of the sample piece and simultaneously injecting a compound gas into the inside of the trenches from openings on the side of the one surface of the trench, decomposing the compound gas with secondary electrons generated by irradiation of the electron beam and depositing constituents of the compound gas within the trenches. Therefore, the method can bury the trenches uniformly without generating cavities within the trenches even if the trenches of the sample piece have a high aspect ratio deep in a depth direction.

Focused radiation beam induced deposition

A method includes loading a mask having a defect into a chamber. The defect of the mask is repaired by forming a repair feature in a repair region of the mask. The forming the repair feature includes irradiating the repair region of the mask with a radiation beam. The forming the repair feature further includes while irradiating the repair region, injecting a precursor gas into the chamber to form a first film of the repair feature on the repair region, and while irradiating the repair region, injecting a cleaning gas into the chamber. The cleaning gas reacts with an impurity material in the first film to transform the first film into a first cleaned film.