Methods for structuring objects with a particle beam apparatus are disclosed.

A nano scale robotic system for single cell DNA sequencing of a strand of DNA positioned on a slide utilizes an atomic force microscope (AFM) having an end effector in the form of a cantilever with a tip. The AFM causes its cantilever tip to scan over the base pairs of the DNA strand. A pair of spaced-apart electrodes at the tip makes contact with opposite sides of the DNA strand and the current between bases of the DNA strand is measured by a current measurement system connected to the electrodes. An artificial intelligence-based data analytic system determines the DNA sequence based on the current from the current measuring system. The AFM tip is guided over the DNA strand by comparing compressed desired intensity local scan images and compressed actual intensity local scan images and using the difference to control the location of the tip.

Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

Embodiments include systems and methods for producing semiconductor wafers having reduced quantities of point defects. These systems and methods include a tunable ultraviolet (UV) light source, which is controlled to produce a raster of a UV light beam across a surface of a semiconductor wafer during epitaxial growth to dissociate point defects in the semiconductor wafer. In various embodiments, the tunable UV light source is configured external to a Metal Organic Chemical Vapor Deposition (MOCVD) chamber and controlled such that the UV light beam is directed though a window defined in a wall of the MOCVD chamber.

Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.

A method of depositing a material on a surface is disclosed. The method includes focusing a radiation beam on the surface and introducing a precursor gas near the surface wherein the precursor gas forms the material on the surface upon radiation by the radiation beam. The method further includes introducing an assistant gas near the surface wherein the assistant gas produces nitric oxide radicals upon radiation by the radiation beam. The nitric oxide radicals facilitate the dissociation process of the precursor gas and reduce contaminants in the deposited material.

A semiconductor device fabrication method includes irradiating a first surface of a substrate with a radiation beam. While irradiating the first surface of the substrate, a precursor gas is introduced near the first surface to deposit a layer including a first material. The precursor gas is removed from near the first surface after the depositing the layer. After the removing the precursor gas and prior to forming another layer over the layer, while irradiating a second surface of the layer, a cleaning gas is introduced near the second surface of the layer to transform the first material into a second material.

The invention provides a method for providing an Au-containing layer onto a surface of a work piece, which method comprises: providing 510 a deposition fluid comprising Au(CO)Cl; depositing 520 the fluid on at least part of the surface of the work piece; and directing 530 a charged particle beam toward the surface of the work piece onto which at least part of the fluid is deposited to decompose Au(CO)Cl thereby forming the Au-containing layer on the surface of the work piece. By using Au(CO)Cl as a precursor for charged particle induced deposition, a gold Au layer may be deposited with a very high purity compared to methods known in the art.

Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.