A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Methods and apparatus for forming a patterned layer of material on a substrate. In one arrangement, a selected portion of a surface of a substrate is irradiated during a deposition process. The irradiation locally drives the deposition process in the selected portion to form a patterned layer of material in a pattern defined by the selected portion. A bias voltage of alternating polarity is applied to the substrate during the irradiation to periodically drive secondary electrons generated inside the substrate by the irradiation towards the surface in the selected portion.

This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

A method of modifying an opening in a mask to achieve desired critical dimensions, the method including performing a pre-implant on the mask to implant the mask with a dopant material, wherein a material of the mask is densified and the opening is enlarged, directing a first radical beam at a first lateral side of the opening to deposit a layer of material on the first lateral side, and directing a second radical beam at a second lateral side of the opening opposite the first lateral side to deposit a layer of material on the second lateral side.

A fabricating equipment and method for a semiconductor device is provided. The fabricating equipment comprises a process chamber including an internal space, a substrate support which supports a substrate including a first film and a second film, inside the internal space, a nozzle which is placed on the substrate support and supplies a process gas, a first heater which is placed inside the substrate support and heats the substrate and a second heater which generates one of waves of a first frequency and waves of a second frequency to differentially heat the first film and the second film.

The present disclosure relates to a method of processing a phase-shift mask for EUV lithography, comprising: particle beam-induced depositing of a repair material using a precursor gas for repair of an imaging structure of the mask. According to the disclosure, the imaging structure can be repaired in such a way that at least one critical dimension of the mask has a deviation from a predetermined critical dimension of at least below 15%, preferably below 10%, more preferably below 5%, most preferably below 3%.

The present disclosure further relates to a phase-shift mask for EUV lithography, to a computer program and to a device.

A method includes extracting electrons from a remote electron source to negatively charge upper surfaces of a patterned layer with the electrons, and extracting positive ions from a remote ion source to selectively deposit a material on the upper surfaces by attracting the positive ions to the electrons of the upper surfaces. The upper surfaces may be negatively charged by concurrently applying a positive bias at the patterned layer and applying source power with a lower power level to generate plasma. The material may be selectively deposited by concurrently applying a negative bias at the patterned layer and applying source power with a higher power level to plasma. An extraction grid may separate the patterned layer from the plasma. The extraction grid may be electrically floating or coupled to a ground potential during either of the electron extraction step or the ion extraction step.

An embodiment relates to an area selective atomic layer thin film deposition method, including: performing surface treatment using fluorocarbon (CFx) plasma on a non-deposition area of the surface of a substrate; providing a thin film precursor and a reactant to the substrate to selectively form an atomic layer thin film on a deposition area of the substrate surface; and removing any residue remaining on the non-deposition area.