Methods and systems for direct atomic layer etching and deposition on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform atomic layer etch and atomic layer deposition, expressing pattern with selected 3D-structure. Reducing the number of process steps in patterned atomic layer etch and deposition reduces manufacturing cycle time and increases yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding columns, and support superior, highly-configurable process execution and control.

A method may include providing a cavity in a surface of a substrate, the cavity comprising a sidewall portion and a lower surface; directing depositing species to the surface of the substrate, wherein the depositing species condense to form a fill material on the sidewall portion and lower surface; and directing angled ions at the cavity at a non-zero angle of incidence with respect to a perpendicular to a plane defined by the substrate, wherein the angled ions strike an exposed part of the sidewall portion and do not strike the lower surface, and wherein the cavity is filled by the fill material in a bottom-up fill process.

A wiring correcting device is configured for irradiation of a beam of CVD-addressing laser light oscillated by a CVD-addressing laser oscillator to cause a photo-degradation of a CVD-addressing raw material gas to develop on a laser-irradiated surface of a correction-addressing substrate, thereby forming a length of correction-addressing metal wiring on the laser-irradiated surface, and provided with a modification-addressing laser oscillator, which is configured to oscillate a beam of modification-addressing laser light different in wavelength from the beam of CVD-addressing laser light, and adapted for melting agglomerates of a correction-addressing metal to be solidified.

A method may include providing a cavity in a surface of a substrate, the cavity comprising a sidewall portion and a lower surface; directing depositing species to the surface of the substrate, wherein the depositing species condense to form a fill material on the sidewall portion and lower surface; and directing angled ions at the cavity at a non-zero angle of incidence with respect to a perpendicular to a plane defined by the substrate, wherein the angled ions strike an exposed part of the sidewall portion and do not strike the lower surface, and wherein the cavity is filled by the fill material in a bottom-up fill process.

Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.

A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

In one embodiment, a method of selectively forming a deposit may include providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.

This invention claims a method for creating patterns of carbon or other elements as deposits on the surface of substrates or as self-supporting filaments in liquid or solid media by the selected application of directed energy. In some embodiments, the deposits or filaments may be of primary interest because of their mechanical properties. In other embodiments, the patterns may have useful physical properties such as being electrically conductive, semi-conductive or electric insulators. Many different deposit precursors, types of directed energy, and adjunct reagents are described. The invention anticipates numerous different embodiments created by selecting various combinations of these elements and sequences of application as a means to build complex devices. In particular, the patterns may constitute the elements of an electric circuit or device (e.g., wires, capacitors, diodes, transistors).

A selective vapor deposition method is provided and includes evaporating a precursor material in a low vacuum evaporating chamber to produce a precursor vapor, evacuating the precursor vapor into a nozzle of a venturi element and accelerating the precursor vapor through a diffuser of the venturi element and toward a target build surface.

A method for processing a holding plate (10) of a clamping device (in particular clamp wafer chuck) for holding a component, in particular a wafer, wherein the holding plate (10) has a SiC-based surface (12) on which at least one protruding, SiC-based surface element (13) is formed, includes the steps of locally limited heating of the holding plate (10) in a predetermined surface section and creating the surface element (13) at the predetermined surface section by chemical vapor deposition, in particular by means of laser CVD. Applications of the method exist in repairing a holding plate (10) of a clamping device or manufacturing a holding plate (10) of a clamping device. Furthermore, a holding plate of a clamping device for holding a component, in particular a wafer, is described.