A methodology for (a) the etching of films of Al.sub.2O.sub.3, HfO.sub.2, ZrO.sub.2, W, Mo, Co, Ru, SiN, or TiN, or (b) the deposition of tungsten onto the surface of a film chosen from Al.sub.2O.sub.3, HfO.sub.2, ZrO.sub.2, W, Mo, Co, Ru, Ir, SiN, TiN, TaN, WN, and SiO.sub.2, or (c) the selective deposition of tungsten onto metallic substrates, such as W, Mo, Co, Ru, Ir and Cu, but not metal nitrides or dielectric oxide films, which comprises exposing said films to WOCl.sub.4 in the presence of a reducing gas under process conditions.

A methodology for (a) the etching of films of Al.sub.2O.sub.3, HfO.sub.2, ZrO.sub.2, W, Mo, Co, Ru, SiN, or TiN, or (b) the deposition of tungsten onto the surface of a film chosen from Al.sub.2O.sub.3, HfO.sub.2, ZrO.sub.2, W, Mo, Co, Ru, Ir, SiN, TiN, TaN, WN, and SiO.sub.2, or (c) the selective deposition of tungsten onto metallic substrates, such as W, Mo, Co, Ru, Ir and Cu, but not metal nitrides or dielectric oxide films, which comprises exposing said films to WOCl.sub.4 in the presence of a reducing gas under process conditions.

Some embodiments of the disclosure relate to methods for forming a bottom-up tungsten gapfill. Some embodiments of the disclosure relate to methods for reducing the deposition rate of tungsten by chemical vapor deposition. A molybdenum halide precursor is added to a tungsten halide precursor and a reductant. The co-flow of tungsten halide and molybdenum halide demonstrates either reduced or eliminated tungsten growth.

Some embodiments of the disclosure relate to methods for forming a bottom-up tungsten gapfill. Some embodiments of the disclosure relate to methods for reducing the deposition rate of tungsten by chemical vapor deposition. A molybdenum halide precursor is added to a tungsten halide precursor and a reductant. The co-flow of tungsten halide and molybdenum halide demonstrates either reduced or eliminated tungsten growth.

Methods of forming molybdenum-containing films are provided. The methods include thermally depositing a first film on a surface of a substrate, for example, at a first temperature less than or equal to about 400° C., and thermally depositing the molybdenum-containing film (second film) on at least a portion of the first film, for example, at a second temperature of greater than about 400° C. The first film can include an elemental metal, for example, tungsten, molybdenum, ruthenium, or cobalt. The second film includes a reaction product of a molybdenum-containing precursor and a reducing agent.

Methods of forming molybdenum-containing films are provided. The methods include thermally depositing a first film on a surface of a substrate, for example, at a first temperature less than or equal to about 400° C., and thermally depositing the molybdenum-containing film (second film) on at least a portion of the first film, for example, at a second temperature of greater than about 400° C. The first film can include an elemental metal, for example, tungsten, molybdenum, ruthenium, or cobalt. The second film includes a reaction product of a molybdenum-containing precursor and a reducing agent.

A carbon nanotube-based reference electrode and an all-carbon nanotube microelectrode assembly for electrochemical sensing and specialized analytics are disclosed, along with methods of manufacture, and applications including detection of ionic species including heavy metals in municipal and environmental water, monitoring of steel corrosion in steel-reinforced concrete, and analysis of biological fluids.

A carbon nanotube-based reference electrode and an all-carbon nanotube microelectrode assembly for electrochemical sensing and specialized analytics are disclosed, along with methods of manufacture, and applications including detection of ionic species including heavy metals in municipal and environmental water, monitoring of steel corrosion in steel-reinforced concrete, and analysis of biological fluids.

A metal powder capable of producing a dust core having a high saturation magnetic flux density, excellent rust resistance, and a low iron loss. The metal powder includes from 1.0% to 15.0% of Si, from 1.0% to 13.0% of Cr, from 10 ppm to 10000 ppm of Cl, from 100 ppm to 10000 ppm of S (sulfur), and from 0.2% to 7.0% of O (oxygen) by mass concentration, the remainder including Fe and unavoidable impurities, in which the average particle diameter of the metal powder is from 0.1 μm to 2.0 μm. This facilitates the production of a dust core having a high magnetic flux density, excellent rust resistance, and a low iron loss.

A metal powder capable of producing a dust core having a high saturation magnetic flux density, excellent rust resistance, and a low iron loss. The metal powder includes from 1.0% to 15.0% of Si, from 1.0% to 13.0% of Cr, from 10 ppm to 10000 ppm of Cl, from 100 ppm to 10000 ppm of S (sulfur), and from 0.2% to 7.0% of O (oxygen) by mass concentration, the remainder including Fe and unavoidable impurities, in which the average particle diameter of the metal powder is from 0.1 μm to 2.0 μm. This facilitates the production of a dust core having a high magnetic flux density, excellent rust resistance, and a low iron loss.