Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

Methods for depositing a thin film with improved film qualities on a hydrogen-terminated surface of a substrate are disclosed. The methods may comprise an atomic layer deposition (ALD) process comprising a plurality of deposition cycles comprising contacting the substrate with a first vapor phase metal halide or metalorganic reactant, contacting the substrate with the second vapor phase reactant, and contacting the substrate with a growth inhibitor. A growth inhibitor may be a non-consumable agent that is not incorporated into the deposited film during the deposition process and helps improve the properties of the deposited film. The growth inhibitor may comprise a vapor phase halide, such as HCl, or an organic molecule.

Methods for depositing a thin film with improved film qualities on a hydrogen-terminated surface of a substrate are disclosed. The methods may comprise an atomic layer deposition (ALD) process comprising a plurality of deposition cycles comprising contacting the substrate with a first vapor phase metal halide or metalorganic reactant, contacting the substrate with the second vapor phase reactant, and contacting the substrate with a growth inhibitor. A growth inhibitor may be a non-consumable agent that is not incorporated into the deposited film during the deposition process and helps improve the properties of the deposited film. The growth inhibitor may comprise a vapor phase halide, such as HCl, or an organic molecule.

Provided is an aluminum precursor for thin-film deposition having a structure of formula (I) or (II), wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, and R.sub.7 each independently represent a hydrogen atom, C.sub.1˜C.sub.6 alkyl, halo-C.sub.1˜C.sub.6 alkyl, C.sub.2˜C.sub.5 alkenyl, halo-C.sub.2˜C.sub.5 alkenyl, C.sub.3˜C.sub.10 cycloalkyl, halo-C.sub.3˜C.sub.10 cycloalkyl, C.sub.6˜C.sub.10 aryl, halo-C.sub.6˜C.sub.10 aryl or —Si(R.sub.0).sub.3, and wherein R.sub.0 is C.sub.1˜C.sub.6 alkyl or halo-C.sub.1˜C.sub.6 alkyl. According to the present invention, based on the interaction principle between molecules, aluminum precursors for thin-film deposition are provided, which have a good thermal stability, are not susceptible to decomposition and convenient for storage and transportation, have good volatility at a high temperature, and are excellent in film formation.

##STR00001##

Provided is an aluminum precursor for thin-film deposition having a structure of formula (I) or (II), wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, and R.sub.7 each independently represent a hydrogen atom, C.sub.1˜C.sub.6 alkyl, halo-C.sub.1˜C.sub.6 alkyl, C.sub.2˜C.sub.5 alkenyl, halo-C.sub.2˜C.sub.5 alkenyl, C.sub.3˜C.sub.10 cycloalkyl, halo-C.sub.3˜C.sub.10 cycloalkyl, C.sub.6˜C.sub.10 aryl, halo-C.sub.6˜C.sub.10 aryl or —Si(R.sub.0).sub.3, and wherein R.sub.0 is C.sub.1˜C.sub.6 alkyl or halo-C.sub.1˜C.sub.6 alkyl. According to the present invention, based on the interaction principle between molecules, aluminum precursors for thin-film deposition are provided, which have a good thermal stability, are not susceptible to decomposition and convenient for storage and transportation, have good volatility at a high temperature, and are excellent in film formation.

##STR00001##

There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiH.sub.4 gas treatment with respect to the target substrate having the base film formed thereon by supplying an SiH.sub.4 gas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.

There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiH.sub.4 gas treatment with respect to the target substrate having the base film formed thereon by supplying an SiH.sub.4 gas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.

The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom.

AnBmXo  [Chemical Formula 1]

wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1.

According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom.

AnBmXo  [Chemical Formula 1]

wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1.

According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQ.sub.zR.sub.m, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III):

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.a, R.sup.b, R.sup.c, R.sup.d, R.sup.e, and R.sup.f are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C).