The present invention relates to a chemical deposition raw material for manufacturing an iridium thin film or an iridium compound thin film by a chemical deposition method, including an iridium complex in which cyclopropenyl or a derivative thereof and a carbonyl ligand are coordinated to iridium. The iridium complex that is applied in the present invention enables an iridium thin film to be manufactured even when a reducing gas such as hydrogen is applied. ##STR00001##
in which R.sub.1 to R.sub.3, which are substituents of the cyclopropenyl ligand, are each independently hydrogen, or a linear or branched alkyl group with a carbon number of 1 or more and 4 or less.

The present disclosure relates to a method of fabricating a semiconductor structure, the method includes forming an opening and depositing a metal layer in the opening. The depositing includes performing one or more deposition cycles, wherein each deposition cycle includes flowing a first precursor into a deposition chamber and performing an ultraviolet (UV) radiation process on the first precursor. The method further includes performing a first purging process in the deposition chamber to remove at least a portion of the first precursor, flowing a second precursor into the deposition chamber, and purging the deposition chamber to remove at least a portion of the second precursor.

A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.

Processes for forming Mo and W containing thin films, such as MoS.sub.2, WS.sub.2, MoSe.sub.2, and WSe.sub.2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

This invention claims a method for creating patterns of carbon or other elements as deposits on the surface of substrates or as self-supporting filaments in liquid or solid media by the selected application of directed energy. In some embodiments, the deposits or filaments may be of primary interest because of their mechanical properties. In other embodiments, the patterns may have useful physical properties such as being electrically conductive, semi-conductive or electric insulators. Many different deposit precursors, types of directed energy, and adjunct reagents are described. The invention anticipates numerous different embodiments created by selecting various combinations of these elements and sequences of application as a means to build complex devices. In particular, the patterns may constitute the elements of an electric circuit or device (e.g., wires, capacitors, diodes, transistors).

A method of forming a thin film on a substrate which includes a step of reacting a precursor compound with a Lewis base. The precursor compound has a transition metal and one or more alkyl-1,3-diazabutadiene ligands is provided.

Transition metal precursors are disclosed herein along with methods of using these precursors to deposit metal thin films. Advantageous properties of these precursors and methods are also disclosed, as well as superior films that can be achieved with the precursors and methods.

Transition metal precursors are disclosed herein along with methods of using these precursors to deposit metal thin films. Advantageous properties of these precursors and methods are also disclosed, as well as superior films that can be achieved with the precursors and methods.

A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.