An integrated system for synthesis of a film-forming precursor, consumption of the precursor and formation of a thin film on a substrate is provided. The integrated system includes a raw material source, a precursor synthesis chamber in communication with the raw material source, a thin film processing chamber in communication with the precursor synthesis chamber for supplying the precursor from the precursor synthesis chamber to the thin film processing chamber in a controlled manner for consumption of the precursor to form the thin film on the substrate, a monitoring system for monitoring of the thin film formation in the thin film processing chamber and/or the precursor synthesis in the precursor synthesis chamber, and a controller for controlling a rate of the precursor synthesis, precursor consumption and/or thin film formation. The rate of precursor synthesis is synchronized with the rate of precursor consumption for formation of the thin film.

A method is provided for void-free Ru metal filling of features in a substrate. The method includes providing a substrate containing features, depositing a Ru metal layer in the features, removing the Ru metal layer from a field area around an opening of the features, and depositing additional Ru metal in the features, where the additional Ru metal is deposited in the features at a higher rate than on the field area. According to one embodiment, the additional Ru metal is deposited until the features are fully filled with Ru metal.

A method is provided for void-free Ru metal filling of features in a substrate. The method includes providing a substrate containing features, depositing a Ru metal layer in the features, removing the Ru metal layer from a field area around an opening of the features, and depositing additional Ru metal in the features, where the additional Ru metal is deposited in the features at a higher rate than on the field area. According to one embodiment, the additional Ru metal is deposited until the features are fully filled with Ru metal.

Provided herein are atomic layer deposition (ALD) methods of depositing cobalt in a feature. The methods involve two-step surface treatments during an ALD cycle, with one step involving the reaction of a co-reactant gas with an adsorbed cobalt precursor and the other step involving a growth-inhibiting reactant gas on the cobalt surface. The growth-inhibiting reactant gas significantly lowers cobalt growth rate, producing a highly conformal cobalt film. The described ALD processes enable improved controllability in film nucleation, step coverage, and morphology by the separate surface treatment and low process temperature. The methods are applicable to a variety of feature fill applications including the fabrication of metal gate/contact fill in front end of line (FEOL) processes as well as via/line fill in back end of line (BEOL) processes.

A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

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A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

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Methods for forming thin films in high aspect ratio feature definitions are provided. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a metal organic containing precursor gas comprising a ligand into an interior processing volume of a process chamber, flowing a precursor gas comprising the ligand into the processing volume and thermally decomposing the metal-containing precursor gas comprising the ligand and the precursor gas comprising the ligand in the interior processing volume to deposit a metal-containing layer over at least one or more sidewalls and a bottom surface of a feature definition in and below a surface of a dielectric layer on the substrate.

Methods for forming thin films in high aspect ratio feature definitions are provided. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a metal organic containing precursor gas comprising a ligand into an interior processing volume of a process chamber, flowing a precursor gas comprising the ligand into the processing volume and thermally decomposing the metal-containing precursor gas comprising the ligand and the precursor gas comprising the ligand in the interior processing volume to deposit a metal-containing layer over at least one or more sidewalls and a bottom surface of a feature definition in and below a surface of a dielectric layer on the substrate.

A stabilized elementary metal structure is disclosed. The stabilized elementary metal structure may include an elementary metal having at least one layer and having a two-dimensional layer structure, and an organic molecular layer provided on at least one of a top surface and a bottom surface of the elementary metal.

Methods and techniques for fabricating metal interconnects, lines, or vias by subtractive etching and liner deposition methods are provided. Methods involve depositing a blanket copper layer, removing regions of the blanket copper layer to form a pattern, treating the patterned metal, depositing a copper-dielectric interface material such that the copper-dielectric interface material adheres only to the patterned copper, depositing a dielectric barrier layer on the substrate, and depositing a dielectric bulk layer on the substrate.