The invention relates to a method for depositing new elements on a substrate of interest by means of a beam of focused ions and a platform for cooling the substrate of interest to cryogenic temperatures that can also rough out defective elements that are located on same. In addition, the invention relates to a device that comprises all the means necessary for carrying out the method, in particular the means necessary for condensing precursor gases on the surface of the substrate of interest at cryogenic temperatures. The method and the device of the invention can be used to remove and repair, for example, metal contacts of an electronic device or of an integrated circuit, or to repair, for example, portions of an optical lithography mask. Therefore, the present invention is applicable in the electronics industry and in the field of nanotechnology.

A film forming apparatus for forming a film on a substrate by transferring a source gas generated from a low-vapor-pressure source to a process container by a carrier gas includes: a source container configured to receive and heat the low-vapor-pressure source; a first gas pipe configured to supply the carrier gas to the source container; a second gas pipe connecting the source container and the process container; a first opening and closing valve provided in the second gas pipe; and a measurement part configured to measure a flow rate of the source gas flowing through the second gas pipe, wherein the second gas pipe is disposed on a central axis of the process container, and wherein the source container is offset with respect to the central axis of the process container.

A film forming apparatus for forming a film on a substrate by transferring a source gas generated from a low-vapor-pressure source to a process container by a carrier gas includes: a source container configured to receive and heat the low-vapor-pressure source; a first gas pipe configured to supply the carrier gas to the source container; a second gas pipe connecting the source container and the process container; a first opening and closing valve provided in the second gas pipe; and a measurement part configured to measure a flow rate of the source gas flowing through the second gas pipe, wherein the second gas pipe is disposed on a central axis of the process container, and wherein the source container is offset with respect to the central axis of the process container.

A stabilized elementary metal structure is disclosed. The stabilized elementary metal structure may include an elementary metal having at least one layer and having a two-dimensional layer structure, and an organic molecular layer provided on at least one of a top surface and a bottom surface of the elementary metal.

A stabilized elementary metal structure is disclosed. The stabilized elementary metal structure may include an elementary metal having at least one layer and having a two-dimensional layer structure, and an organic molecular layer provided on at least one of a top surface and a bottom surface of the elementary metal.

An aerosol-assisted chemical vapor-deposition (AACVD) method of making NiPd nano-alloy electrocatalyst. The method includes subjecting a mixture including Pd(II)acetylacetonate Pd(C.sub.5H.sub.7O.sub.2).sub.2, Ni(II)acetylacetonate Ni(C.sub.5H.sub.7O.sub.2).sub.2 and a solvent to AACVD, to form a NiPd nano-alloy electrocatalyst. The NiPd nano-alloy electrocatalyst is formed on a surface of a porous metallic substrate in a single-step. The electrocatalyst of the present disclosure exhibits excellent OER activity, demonstrates excellent durability during prolonged water electrolysis experiments and imposing kinetics for OER.

An aerosol-assisted chemical vapor-deposition (AACVD) method of making NiPd nano-alloy electrocatalyst. The method includes subjecting a mixture including Pd(II)acetylacetonate Pd(C.sub.5H.sub.7O.sub.2).sub.2, Ni(II)acetylacetonate Ni(C.sub.5H.sub.7O.sub.2).sub.2 and a solvent to AACVD, to form a NiPd nano-alloy electrocatalyst. The NiPd nano-alloy electrocatalyst is formed on a surface of a porous metallic substrate in a single-step. The electrocatalyst of the present disclosure exhibits excellent OER activity, demonstrates excellent durability during prolonged water electrolysis experiments and imposing kinetics for OER.

The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co.sub.2(CO).sub.6(R.sup.3C≡CR.sup.4), where R.sup.3 and R.sup.4 are different organic moieties and R.sup.4 is more electronegative or more electron withdrawing compared to R.sup.3.

The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co.sub.2(CO).sub.6(R.sup.3C≡CR.sup.4), where R.sup.3 and R.sup.4 are different organic moieties and R.sup.4 is more electronegative or more electron withdrawing compared to R.sup.3.

Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.